Reaction chamber and semiconductor processing device

Abstract

The invention discloses a reaction chamber and a semiconductor processing device, in the reaction chamber, a lower electrode box body is supported on the chamber wall through a plurality of channels, and an inner cavity of the lower electrode box body is communicated with the outside of the reaction chamber through the plurality of channels; the plurality of channels are evenly distributed around the circumferential direction of the longitudinal axial line of the reaction chamber; and an air extraction port is formed at the lower part of the chamber wall. On the one hand, a centrally symmetric distribution structure is formed on an air extraction air passage, thereby forming even distribution of air flow; on the other hand, a variety of air pipelines, electrical lines, cooling pipelines, radio frequency lines and the like can be arranged through the plurality of channel, thereby realizing simple structure and flexible arrangement. The reaction chamber can be used for different types of semiconductor plasma processing, such as etching, deposition and the like.

Description

technical field [0001] The invention relates to semiconductor processing equipment, in particular to a reaction chamber for semiconductor processing. Background technique [0002] In the process of semiconductor processing, the reaction chamber provides a vacuum environment for the processing of semiconductor substrates. By supplying process gas to the reaction chamber and exciting the gas into a plasma state through a radio frequency power supply, the corresponding material corrosion or corrosion on the surface of the substrate is carried out. deposition and other processing techniques. [0003] For semiconductor substrate processing, the uniformity of the entire substrate surface treatment is an important indicator of the process. After the process gas enters the reaction chamber, a gas flow field is formed. The symmetry of the gas flow field relative to the center of the substrate is the key factor for the substrate surface treatment The key to the uniformity of the reac...

AI Technical Summary

Problems solved by technology

[0009] In prior art 1, since the air inlet is located on the side, it is arranged asymmetrically, resulting in uneven distribution of air flow on the surface of the substrate;

[0010] In the second prior art, in order to ensure sufficient strength and enough space for the installation of cooling devices, radio frequency devices and electrical circuits, etc., the size of the suspended support arm should not be too small, because the existence of the cantilever support causes the airflow path asymmetry, resulting in uneven air distribution

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