543 results about "Circuit delay" patented technology

The invention provides a method, system, and program product for determining a gradient of a parametric yield of an integrated circuit with respect to parameters of a delay of an edge of a timing graph of the circuit. A first aspect of the invention provides a method for determining a gradient of a parametric yield of an integrated circuit with respect to parameters of a delay of an edge of a timing graph of the circuit, the method comprising: conducting a statistical timing analysis; expressing a statistical circuit delay in terms of a delay of the edge; and computing a gradient of the statistical circuit delay with respect to parameters of the delay of the edge.

A dual-port SRAM operates for read and write operations in a single clock cycle. The SRAM has a comparator for comparing the read address and the write address to detect a coincidence therebetween. A bypass circuit bypasses the write data as a read data upon detection of a coincidence, whereas a timing circuit delays the write control signal with respect to the read control signal upon detection of no coincidence. The timing control between the read operation and the write operation reduces signal interference between the write data and the read data and enables a higher speed operation of the computer system.

A wireless coiled tubing joint locator for locating joints or collars in a production tubing string. An electromagnetic coil assembly or giant magnetoresistive digital field sensor senses the increased mass of a pipe joint, and provides a signal to an electric circuit which generates a signal received by a pilot solenoid valve. The solenoid valve momentarily opens a pilot passageway which activates a piston to close a circulation port in the joint locator, resulting in an increase in a surface pressure reading observable by the operator. In one embodiment, a rupture disk is provided so that pressure cannot be applied to any downhole tool below the joint locator prematurely. A seat sleeve prevents premature communication of fluid to the rupture disk but can be opened by dropping a ball into the joint locator. A second embodiment may be used for either logging or washing operations or both. The electronic circuit can provide a selected one of a plurality of time delays. A fixed test period in the circuit delays activation of the time delay so that the joint locator may be tested before it is run into the well. The electric circuit and power supply are provided in a removable case.

A drink dispensing cart includes a drink dispensing machine that is normally plumbed directly into a municipal water pipe at a fixed location. The cart includes a container of water, preferably a disposable container of water such as a bag-in-box container of water, and a pump to pump water from the container of water to the drink dispensing machine. A controller controls operation of the pump to operate the pump only when water is needed by the drink dispensing machine and to provide an indication when the container of water is empty and needs changing. A pressure sensor in an outlet line extending between the pump and drink dispensing machine senses when water is needed by the dispenser and a pressure sensor in an inlet line extending between the pump and the container of water senses when the container of water is empty and needs replacing. A time delay circuit delays start of operation of the pump when water is needed by the drink dispenser to avoid pulsing of the pump. The bag-in-box container of water is sized for efficient packing and shipping.

The invention provides a dual-redundancy CAN bus data receiving and processing method which aims to solve the problem the existing technique can not simply and effectively solve the problem that two channels receive repeated data. The method comprises the steps of (1) sending data composed of data frames on a first channel and a second channel of a dual-redundancy CAN bus at the same time, (2) receiving the data of the first channel of the dual-redundancy CAN bus and the data of the second channel of the dual-redundancy CAN bus, (3) judging whether repeated data distinguishing needs to be carried out on the data frames of the data received from the two channels, (4) directly using the data with repeated data distinguishing not needed, distinguishing the data frames with repeated data distinguishing needed, using unrepeated data in the data frames treated with distinguishing, and discarding the repeated data. According to the dual-redundancy CAN bus data receiving and processing method, influence of software delay and circuit delay on dual-redundancy CAN bus data receiving is avoided with simple methods.

A semiconductor memory device is effectively able to adjust operation time for on-die termination (ODT). The semiconductor memory device includes a latency control unit, a control signal generating unit, a trimming control unit, and a termination circuit. The latency control unit produces an ODT driving enable signal by delaying an ODT operation signal from an external circuit during a predetermined latency. The control signal generating unit produces control signals to control a change of waveform of the ODT driving enable signal. The trimming control unit changes the waveform of the ODT driving enable signal in response to the control signals, thereby outputting a ODT driving signal. The termination circuit connects a termination resistance to an impedance adjusting node in response to the ODT driving signal.

Low voltage drop ORing circuits with zero recovery time and reverse current protection. In use, a MOSFET is coupled between a power supply and a load in a multiple power supply, single load system, or between a power supply and a load in a single power supply, multiple load system, or in both locations in multiple power supply, multiple load systems. A controller senses the current through the MOSFET, and turns the MOSFET off when the current falls below a predetermined threshold current. This allows time for circuit delays and the discharge of the gate of the MOSFET to turn the MOSFET off before the current through the MOSFET car reverse. Turn-on of the MOSFET when the current exceeds the threshold may be purposely slowed to avoid current spikes. Addition of another MOSFET controlled by the controller adds a hot swap capability and the control of the V_C slew rate. Various other features and embodiments are disclosed, including various current sensing techniques and circuits using transistors other than MOSFETs.

A semiconductor integrated circuit may include an internal circuit, and a power-on reset circuit for generating a power-on reset signal to initialize the internal circuit at a power-on. At the power-on, the power-on reset circuit delays a transition of the power-on reset signal from a first level to a second level until a given time duration after the power supply voltage reaches a detection voltage.

The invention relates to a method and a device for analyzing the reliability of an integrated circuit. In the analytical method, a unit circuit delayed aging stochastic analysis reference model in consideration with both negative bias temperature instability (NBTI) effect and process parameter perturbation is established, a scaling function and an equivalent aging time concept are provided to solve the delayed statistical distribution of a unit circuit under the actual work environment quickly from the reference model, and the pre-clipping process of the circuit is provided to reduce the complexity of reliable analysis. The device of the invention comprises an input unit, an output unit, a program storage unit, an external bus, a memory, a storage administration unit, an input/output bridging unit, a system bus and a processor. In the method and the device, the effect of the process parameter perturbation, the NBTI effect and the work environment of the circuit on reliability are considered simultaneously, and the complexity of the reliable analysis can be reduced effectively by utilizing the scaling function, equivalent aging time and the pre-clipping technology so as to realize the quick analysis on the reliability of super-large-scale integrated circuits in consideration with process deviation.

The invention discloses an online monitoring unit oriented to ultrawide voltage and a monitoring window self-adaptive adjusting system. Based on a traditional prediction type online time sequence monitoring unit, the online monitoring unit with an adjustable monitoring window is designed so as to adapt to the change of circuit delay at ultrawide voltage within a larger range. The invention further discloses the adjusting system, with the self-adaptive adjusting function, of the monitoring window. The window value can be adjusted in a self-adaptive mode within the ultrawide voltage range according to the monitored PVT (Process-Voltage-Temperature) state of a circuit, and therefore the reserved time sequence margin in traditional design can be fully reduced, and power consumption of the circuit is effectively reduced.

A circuit for rejecting single-event transients (SETs) from logic signals is provided. The circuit includes a delay circuit, an inverter circuit, and an output-holding circuit. The delay circuit receives an input signal and delays the input signal to produce a time-delayed version of the input signal. The input signal and the time-delayed version of the input signal are fed into the inverter circuit that propagates a corresponding output signal only when the input signal and the time-delayed version of the input signal have the same logic level. If the input signal or the time-delayed version of the input signal transitions such that both input signals presented to the inverter circuit have opposite logic levels, the output-holding circuit maintains the output signal in its previous state.

An audio signal processor forms gaps or guard bands in sequences of blocks conveying encoded audio information and time aligns the guard bands with video information. The guard bands are formed to allow for variations in processing or circuit delays so that the routing or switching of different streams of video information with embedded audio information does not result in a loss of any encoded audio blocks.

A system for compensating for thermal drift of an output signal (OUT1) produced by a logic circuit in response to an input CLOCK signal after a temperature dependent delay includes a variable delay circuit, an oscillator and a digital phase lock controller. The delay circuit delays the OUT1signal to produce a compensated output signal (OUT2) with a variable delay controlled by input CONTROL data. The oscillator generates an output signal (OSC-OUT) having a period also controlled by the input CONTROL data which is substantially proportional to the sum of the temperature dependent delay of the logic circuit and the delay of the variable delay circuit. The digital phase lock controller continually monitors the period of the OSC-OUT signal and adjusts the CONTROL data so that the period of the OSC-OUT signal remains substantially constant. This ensures that the delay between the CLOCK signal and OUT2 remains constant despite temperature dependent variations in the delay of the logic circuit.

A circuit delay monitoring apparatus has a ring oscillator with a plurality of delay elements, a signal transition being propagated through the delay elements of the ring oscillator, and a plurality N of sampling points being distributed around the ring oscillator. Selection circuitry selects, in dependence on the indication of the current location of the signal transition generated by the fine sampling circuitry, one of the M transition counter circuits whose associated location is greater than said predetermined amount from the current location of the signal transition. Output generation circuitry then generates a count indication for a reference time period dependent on a sampled count value of the transition counter circuit selected by the selection circuitry, the indication of the current location of the signal transition within the ring oscillator, and reference count data relating to the start of the reference time period.

A noise reduction circuit with high noise reduction effect and low power consumption for a high resolution charge coupled device (CCD) as well as for a usual resolution CCD is provided. A delay circuit delays an CCD output signal, and a pulse generator outputs a pulse signal having the same period that the CCD output signal has. A part of period during which the pulse signal is at a high level overlaps with a signal-level period oh the CCD output signal. A first non-additive mixing (NAM) circuit selects and output a lower level signal between the CCD output signal and the pulse signal. A second NAM circuit selects and outputs a lower level signal between the output signal from the delay circuit and the pulse signal. A difference circuit calculates difference between an output signal of the first NAM circuit and an output signal of the second NAM circuit. A delay time of the delay circuit is set so that a feedthrough-level period of an output signal of the delay circuit overlaps with a signal-level period of the CCD output signal.

A ring oscillator row circuit for evaluating memory cell performance provides for circuit delay and performance measurements in an actual memory circuit environment. A ring oscillator is implemented with a row of memory cells and has outputs connected to one or more bitlines along with other memory cells that are substantially identical to the ring oscillator cells. Logic may be included for providing a fully functional memory array, so that the cells other than the ring oscillator cells can be used for storage when the ring oscillator row wordlines are disabled. One or both power supply rails of individual cross-coupled inverter stages forming static memory cells used in the ring oscillator circuit may be isolated from each other in order to introduce a voltage asymmetry so that circuit asymmetry effects on delay can be evaluated.

A current controlled switching mode power supply is provided. A turn on/off time of a switching device is adjusted by controlling a leading edge blanking (LEB) time and an external drive current of the switching device by means of a switching controller, thus capable of preventing a switching current from being excessive due to a delay of a turn-off time of the switching device, which is caused by a circuit delay during a soft start of the switching mode power supply. Also, it is possible to prevent a switching current from being excessive due to a failure of accurately controlling a turn-off time of the switching device because of a delay caused when an output voltage (a voltage at a secondary winding of a transformer) of the switching mode power supply is designed to have a high voltage.

A buffer circuit with slow output edges is described. Pulsed higher value currents are driven from one shot timing circuits to inject a pulse of current into the control gate of the buffer's output MOSFET to speed up the beginning of the turning on or the turning off of the output MOSFT. When the beginning and turning on and off is reached lower value current sources continue to drive the gate of the output MOSFET. In one embodiment, one shots are triggered from the rising and falling edges of the input signal. The effect of the higher value current pulses is to reduce the circuit delay through the buffer. Also, the pulse width can be designed as temperature sensitive, and supply voltage sensitive so as to maintain the buffer circuit delay as substantially constant as temperature, supply voltage and process variation occur.

A multi-threshold integrated circuit (IC) with reduced subthreshold leakage and method of reducing leakage. Selectable supply switching devices (NFETs and/or PFETS) between a logic circuit and supply connections (V_dd and Ground) for the circuit have higher thresholds than normal circuit devices. Some devices may have thresholds lowered when the supply switching devices are on. Header/footer devices with further higher threshold voltages and widths may be used to further increase off resistance and maintain/reduce on resistance. Alternatively, high threshold devices may be stacked to further reduce leakage to a point achieved for an even higher threshold. Intermediate supply connects at the devices may have decoupling capacitance and devices may be tapered for optimum stack height and an optimum taper ratio to minimize circuit leakage and circuit delay.

A charge pump circuit for converting an input voltage to a predetermined voltage. The charge pump circuit includes switching transistors, which are connected in series between an output terminal and reference potential terminal of the charge pump circuit, and a capacitor connected to a node between the first and second transistors. The switching transistors include a first transistor connected to the reference potential terminal and a second transistor connected to the first transistor. The capacitor has a first terminal connected to a node between the transistors and a second terminal connected to a delay circuit. The delay circuit is connected between the second terminal of the capacitor and a control terminal of the first transistor. The delay circuit delays a clock signal received by the control terminal by a predetermined time and provides the delayed first clock signal to the second terminal of the capacitor.

A DC/DC converter has a semiconductor switch coupled to an inductor, a capacitor and a rectifier. A comparator is coupled to across the rectifier to detect a polarity reversal during the second portion of converter operation to place the converter in a low power mode if the voltage across the rectifier is of an appropriate polarity for reverse current flow. The rectifier may be a synchronous rectifier transistor and the voltage converter placed in a low power mode when the polarity across the synchronous rectifier indicates that reverse current flow is possible. A timing circuit delays the generation of the control signal to place the converter in a low power mode until the steady state current is below a predetermined threshold for a predetermined amount of time. The synchronous rectifier may be turned OFF when the current through the converter falls below another predetermined threshold value and the voltage across the synchronous rectifier will become the voltage across the parasitic diode of the FET synchronous rectifier.

The invention provides a level shift circuit which is used for shifting high-level input signal into low-level output signal. The level shift circuit comprises: VDDH, VDDL, GND, a shaping circuit and an output circuit. A first stage inverter unit of the shaping circuit comprises a pair of PMOS transistors, a first pair of NMOS transistors and a second pair of NMOS transistors. Drain electrodes of the pair of PMOS transistors are connected with grid electrodes of each other and source electrodes are connected with the VDDH. The first pair of NMOS transistors is connected in series with the second pair of NMOS transistors respectively, wherein the grid electrodes of the series-connected NMOS transistors are mutually connected with each other. The source electrodes of the first pair of NMOS transistors are grounding. The drain electrodes of the second pair of NMOS transistors are respectively connected with the drain electrodes of the pair of PMOS transistors. And the grid electrodes of the second pair of NMOS transistors are respectively connected with input terminal and output terminal of a finally stage inverter unit of the shaping circuit. The second pair of NMOS transistors is depletion-type thick grid transistors. The first pair of NMOS transistors is thin grid type transistors. The level shift circuit has a high speed responsibility and a small circuit delay.