The invention discloses a 1,053 nanometer
femtosecond pulse generation device with a stable
carrier envelope phase. The 1,053 nanometer
femtosecond pulse generation device structurally comprises an optical parametric amplification
system, a dichroic mirror pair, a frequency multiplication
crystal and another dichroic mirror pair, wherein the optical parametric amplification
system outputs a
femtosecond pulse with a stable
carrier envelope phase and center
wavelength of 2,106 nanometers; the dichroic mirror pair has
high reflectivity at the
wave band of 2,106 nanometers and high transmissivity at the
wave band of 1,290 nanometers; the frequency multiplication
crystal is used for multiplying the frequency of the
femtosecond pulse with center
wavelength of 2,106 nanometers to 1,053 nanometers; and the other dichroic mirror pair has
high reflectivity close to the
wave band of 1,053 nanometers and high transmissivity close to the wave band of 2,106 nanometers. The device provided by the invention has the characteristics of center
wavelength close to 1,053 nanometers, tunable property, stable
carrier envelope phase, super contrast, stable work and the like, and is particularly suitable for being used as a front-end seed source of a high-power super contrast chirped-pulse amplification
system and the optical parametric amplification system with operation wavelength of 1,053 nanometers or 1,064 nanometers.