1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase
A technology of carrier envelope phase and femtosecond pulse, which is applied to laser components, electrical components, phonon exciters, etc., can solve the problems of spectral center wavelength cannot be tuned, affect sensitivity, affect pulse stability, etc., and achieve carrier envelope network phase stabilization, increased stability, ultra-high contrast effect
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[0040] The wavelength of the incident light is 800 nanometers, the energy is 3.8 millijoules, the pulse width is 35 femtoseconds, and the repetition frequency is 1 KHz. In the tunable optical parametric amplification system, the nonlinear crystal used is BBO. After the laser pulse passes through the third-order collinear optical parametric amplification system, a femtosecond laser pulse with an energy of 600 microjoules and a wavelength of 2106 nanometers is obtained. The dichroic mirror pair (3), (4) has a reflectance of 99.5% in the 2106 nm band when the incident angle is 45°. The frequency doubling crystal (5) is a BBO crystal ( =21.6°, =0°, 0.3mm thick). The dichroic mirror pair (6), (7) has a reflectance of 99.5% in the 1053 nm band when the incident angle is 45°. Finally, in the 1053 nm band, the energy 120 microjoules, the pulse width 46 femtoseconds, and the contrast > 10 11 femtosecond pulses. The exposure time is 1 millisecond, and the measurement is 35 minut...
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