The invention belongs to the technical field of semiconductors, and relates to a diode chip, in particular to a semiconductor diode chip and a manufacturing method thereof. The semiconductor diode chip comprises a silicon chip substrate, wherein the bottom part of the silicon chip substrate is provided with a phosphorus diffusion layer, the upper part is provided with a boron diffusion layer, metal electrodes are arranged on the upper part of the boron diffusion layer and the bottom part of the phosphorus diffusion layer, a novel passivation layer is arranged at the outer side of the peripheryof the silicon chip substrate, and the novel passivation layer comprises a transition portion and a 'beak' portion. The manufacturing method comprises the steps of original sheet cleaning, diffusion,sand blasting, cleaning, primary photoetching, stepped corrosion, secondary photoetching, grooving corrosion, cleaning, passivation, third-time photoetching, metallization, electrical performance testing and scribing. The semiconductor diode chip has the advantages that the 'beak' portion of the semiconductor diode chip is protected by glass, the glass is not higher than the table board of the chip, ignition is not caused, the manufacturing cost is low (higher than that of a knife scraping manufacturing process, and lower than that of a photoresist manufacturing process), the effective use area of the chip is large, the VF is lower, the glass is thick, the pressure endurance capability is high, the service life is long, the high temperature reliability is high and the like.