42results about How to "Variation in quality" patented technology

Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.

There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.

The invention of the present application provides a wire harness with an improved accuracy of the dimension, that can be manufactured with an easy operation. A protector (4) defines at least either one of a bending shape and a branching shape of a plurality of electric wires (2). A cable tie (10) is attached to the electric wires (2), and includes a distal portion (11a) to be attached to the protector (4). The protector (4) includes an engaging portion (13) engageable with the distal portion (11a). Positions of the electric wires (2) and the protector (4) relative to each other are settled by engagement of the distal portion (11 a) of the cable tie (10) attached to the electric wires (2) with the engaging portion (13).

A complete decreased mistake-proof high-reliability waterproofing system is revealed that integrates the waterproofing membrane, drain panel, and abrasion-protected filter fabric, using a factory-controlled process; furthermore, the system incorporates intrinsic devices for installation verification and leak-detection, and the potential for in situ mapping of the functional topography of the waterproofing installation over time.

A semiconductor film formed over a substrate is irradiated by a first laser beam which is incident on a bottom surface of the substrate at an angle and by a second laser beam which is incident on the bottom surface of the substrate at an angle opposite that of the first laser beam and oscillated by an oscillator differing from that of the first laser beam; whereby, part of the semiconductor film is melted, and a portion of the semiconductor film being melted is moved while the positions of irradiation of the first and the second laser beams and are being scanned approximately along the direction of slant for the first laser beam or the second laser beam.

The present invention intends to provide a small-sized impedance matching device with a small variation in quality and large-current tolerance. The above described intention of the present invention is achieved by an impedance matching device, which comprises a wiring portion comprising a conductor pattern for wiring, embedded inside or formed on the surface of first dielectric material, and either one or both of an inductor portion comprising a conductor pattern for inductor, embedded inside or formed on the surface of the first dielectric material, or a capacitor portion comprising at least one pair of conductor patterns for capacitor and second dielectric material with a dielectric constant larger than that of the first dielectric material, existing between the pair of conductor patterns for capacitor wherein the thicknesses of the conductor pattern for wiring and the conductor pattern for inductor are 20 μm or more.

A continuous kneading apparatus and method are provided wherein discharge ports are provided at a plurality of positions of the barrel to discharge a kneaded product, and one of the plurality of the discharge ports is selected according to a desired kneading condition so as to discharge the kneaded product from only the selected discharge port. Another continuous kneading apparatus and method are provided wherein a plurality of charging ports are provided at a plurality of positions of the barrel to supply a material to be kneaded into the chamber, and one of the plurality of charging ports is selected according to a desired kneading condition. The kneading apparatuses and methods permit adjustment and control of a viscosity and a dispersion degree of a compounding agent over a wide range, and continuous kneading to achieve significant rationalization of a process for producing a kneaded product.

In the present invention, a plurality of first units capable of accommodating the substrate and a second unit are provided, in which a substrate is carried between the first unit and the second unit. The first units and the second unit are arranged side by side in a plan view, and at least one of the plurality of the first units is a processing unit for performing processing for the substrate. The plurality of first units are arranged in a line in the horizontal direction, and at least two first units adjacent to each other in the horizontal direction of the plurality of first units are movable in the horizontal direction to be able to transfer the substrate to/from the second unit. According to the present invention, the substrate processing system including a plurality of units flexibly deals with various substrate processing recipes and reduces the processing time difference among substrates and the carriage waiting time of the substrate.

The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.

In hot press forming a thin steel sheet K, when cooling the thin steel sheet K by supplying a refrigerant to an ejection hole (27) communicated from a supply path (28) inside a lower mold (12), precooling in which an ejection amount per unit time period of the refrigerant from the ejection hole (27) is suppressed is carried out, and thereafter, main cooling is carried out by increasing the ejection amount per unit time period.

Plastic-worked lumber. PW1 and PW2 has air-dried specific gravity twice or more than those of lumber before processing NW1 and NW2 and acute crossing angles within a range of 45 degrees or less. The acute crossing angles are formed by all of annual ring lines RL on a butt end surface of the plastic-worked lumber PW1 or PW2 and a heart-side cross grain surface or a pith-side straight grain surface of the plastic-worked lumber PW1 or PW2. The plastic-worked lumber PW1 and PW2 is prepared by heating and compression to lumber NW1 or NW2 so that the lumber NW1 or NW2 is heated and compressed in a thickness direction thereof and plastically worked.

Provided is a vacuum assisted resin transfer molding method for producing a component, in particular a spar cap, of a rotor blade including a lightning protection system, wherein the vacuum assisted resin transfer molding method includes the steps of: a) placing) an electrically conductive beam fiber material of an electrically conductive beam, an electrically conductive fiber mat and an electrical conductor of the component in a mold arrangement electrically connecting the electrically conductive beam fiber material to the electrical conductor by means of the electrically conductive fiber mat, wherein an electrical connection between the electrical conductor and the electrically conductive fiber mat is generated, c) subjecting the mold arrangement to underpressure, d) applying an external pressure on the electrical connection from outside the mold arrangement, e) injecting resin into the underpressurized mold arrangement, and f) applying heat to the mold arrangement for curing the resin.