40results about How to "Uniform electric field strength" patented technology

The conventional Schottky barrier diode has a problem that the increase in leak current is evitable for realizing low VF due to the VF and IR characteristics of the Schottky barrier diode are in a trade-off relation. In the semiconductor device of this invention, pillar shaped p type semiconductor regions that reach an n+ type semiconductor substrate are provided in an n- type semiconductor layer, so that when a reverse voltage is applied, the part of the n- type semiconductor layer between the p type semiconductor regions is filled completely by a depletion layer expanding from the p type semiconductor region and in the horizontal direction of the substrate. In other words, the leakage of the leak current generated at the Schottky junction interface to the cathode side can be suppressed. Moreover, since the impurity concentration in the n- type semiconductor layer can be increased to the extent that the depletion layer expanding from the adjacent p type semiconductor regions can still pinch off, the low VF can be realized, and a predetermined breakdown strength can be secured as long as the depletion layer can pinch off.

The invention discloses a ferroelectric medium-based negative capacitance MoS2 transistor and a preparation method thereof. The preparation method comprises the steps of growing a MoS2 thin film on asurface of a SiO2 substrate; sequentially growing a first High-K layer, a first TiN layer, a ferroelectric thin film layer, a second TiN layer, a second High-K layer which are used as a grid dielectric layer on a surface of the MoS2 thin film; growing a third TiN layer and a Ti / Au metal layer which are used a grid electrode on the grid dielectric layer; and growing two layers of Al metal which areused a source electrode and a drain electrode on the MoS2 thin film layer. The TiN layers wrap the ferroelectric grid dielectric thin film layer, the metal TiN is used for balancing an additional electric field generated by population and turnover of the ferroelectric grid dielectric thin film again, the additional electric field is uniformly applied to the MoS2 thin film layer, the situations that the device is started slowly and a sub-threshold is relatively larger caused by different MoS2 inversion conditions of each point in a channel are prevented, and meanwhile, the situation that the point is easy to break down when point field intensity of the High-K layers is relatively large is also prevented.

The invention relates to an anti-penetration typed array substrate and a preparation method thereof; the anti-penetration typed array substrate comprises a soft substrate and an array mainbody which is arranged on the soft substrate; the soft substrate is provided with a penetration area and a reflection area; the reflection area of the soft substrate forms an emboss which is provided with a reflection plate; the emboss, the reflection plate and the array mainbody are arranged on the same surface of the soft substrate; the preparation method of the anti-penetration typed array substrate comprises the steps as follows: the emboss is formed on the soft substrate and the array mainbody is formed on the soft substrate; wherein, the emboss is formed on the soft substrate by the detailed steps as follows: step 101: the soft substrate and a neilsbed are arranged; the soft substrate is provided with the penetration area and the reflection area; the neilsbed is heated to 150-200 DEG C; step 102: the neilsbed is pressed and stamped on the reflection area of the soft substrate to form the emboss; and step 103: the reflection is formed on the emboss. The anti-penetration typed array substrate and the preparation method thereof solve the problem that all parameters of the anti-penetration typed array substrate of the prior art are greatly difficult to be arranged and reduce the preparation cost of the anti-penetration typed array substrate.

The invention discloses a resin-insulation dry-type long-round-cake-shaped coil. The resin-insulation dry-type long-round-cake-shaped coil comprises end insulators, wires, an inner surface insulator, an outer surface insulator and line outlet terminals. According to the resin-insulation dry-type long-round-cake-shaped coil and a winding method, the use amount of an iron core of a transformer is reduced, the manufacturing cost is reduced by about 12%, and the no-load losses, the no-load current, the noise and the like of the transformer are optimized; due to a continuously-arranged coil structure, the wire filling coefficient is increased, the heat dissipation performance is good, the overloading capacity is higher, the electric field intensity in the coil is balanced, partial discharging is reduced, convenience is brought to pouring of epoxy resin, air holes, shrinkage porosity, cracks and the like are not prone to occurrence, the safety performance of the transformer is improved, and losses are reduced; as non-full-turn design is adopted for the portions, close to the ends, of the coil, the electric field intensity is optimized.

The invention relates to an anti-penetration typed array substrate and a preparation method thereof; the anti-penetration typed array substrate comprises a soft substrate and an array mainbody which is arranged on the soft substrate; the soft substrate is provided with a penetration area and a reflection area; the reflection area of the soft substrate forms an emboss which is provided with a reflection plate; the emboss, the reflection plate and the array mainbody are arranged on the same surface of the soft substrate; the preparation method of the anti-penetration typed array substrate comprises the steps as follows: the emboss is formed on the soft substrate and the array mainbody is formed on the soft substrate; wherein, the emboss is formed on the soft substrate by the detailed steps as follows: step 101: the soft substrate and a neilsbed are arranged; the soft substrate is provided with the penetration area and the reflection area; the neilsbed is heated to 150-200 DEG C; step 102: the neilsbed is pressed and stamped on the reflection area of the soft substrate to form the emboss; and step 103: the reflection is formed on the emboss. The anti-penetration typed array substrateand the preparation method thereof solve the problem that all parameters of the anti-penetration typed array substrate of the prior art are greatly difficult to be arranged and reduce the preparationcost of the anti-penetration typed array substrate.

The invention discloses a uniform electromagnetic field device for a plasma velocity screening instrument. The sensor comprises a first ceramic plate, a second ceramic plate, a first magnetic pole plate, a second magnetic pole plate, a first magnetic pole plate gasket, a second magnetic pole plate gasket, a first electrode plate, a second electrode plate, a first electrode plate insulating block,a second electrode plate insulating block, a first electrode plate adapter, a second electrode plate adapter and a shell. By means of the technical scheme, the relative position precision is kept reasonable, and installation precision and machining performance are met. A special concave circular electric field structure is adopted; a uniform electric field and a uniform magnetic field are providedfor the interior of the plasma speed screening instrument, , the electric field distribution in the center area is relatively uniform and the electric field intensity is gradually reduced in the direction from the center to an electrode plate under a narrow and long electric field structure with the limited width, and a uniform electromagnetic field channel can be provided for the plasma speed screening instrument.

The invention provides an energy-saving and environment-friendly high-voltage closed bus. The bus comprises a shell and three busbars, wherein the three busbars are uniformly and fixedly arranged in the shell; and the included angle alpha between the adjacent busbars is 120 degrees. The bus has the following beneficial effects: as the three busbars are uniformly and fixedly arranged in the shell and the included angle alpha between the adjacent busbars is 120 degrees, the synthetic magnetic potential among the busbars is zero; and during distance power transmission, the three busbars are uniformly symmetric, thus avoiding the problem of complex phase change needing to be considered due to the proximity effect and nonuniform three-phase power transmission loss, so the bus is more convenient and safer to use.