Ferroelectric medium-based negative capacitance MoS2 transistor and preparation method thereof
A technology of ferroelectric gate dielectric and molybdenum sulfide, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as heat generation that cannot be ignored, limiting chip operating speed, lowering the upper limit of operating frequency, etc., and achieving easy large-scale Circuit integration, avoiding the effect of slow device opening and fast opening speed
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[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] This embodiment provides a method for preparing a negative capacitance molybdenum disulfide transistor based on a ferroelectric gate dielectric. The preparation method includes, first, SiO 2 Substrates are cleaned, SiO 2 The specific cleaning process of the substrate is as follows:
[0030] 1) Ultrasonic cleaning with acetone, the ultrasonic frequency is 45-50KHz;
[0031] 2) Ethanol ultrasonic cleaning, the ultrasonic frequency is 50-55KHz;
[0032] 3) Rinse in a beaker of deionized water;
[0033] 4) Boil in concentrated sulfuric acid: hydrogen peroxide = 4:1 (volume ratio) mixture at 90°C for 15 minutes, rinse with deionized water. The concentration of sulfuric acid is 98%, and the concentration of hydrogen peroxide is 40%.
[0034] Put the cleaned material into the CVD equipment to grow molybdenum sulfide material. The CVD met...
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