The invention provides a secondary deposition and dispersion process for a selective emitter battery. The secondary deposition and dispersion process is used for performing
phosphorus source deposition on the surface of a
crystalline silicon solar cell silicon slice, and comprises the following steps of: putting the
crystalline silicon solar cell silicon slice into a first preset-temperature environment, and feeding a
phosphorus source and
oxygen until the
phosphorus source is deposited to preset concentration, or putting the
crystalline silicon solar cell silicon slice into a third preset-temperature environment, feeding the phosphorus source and the
oxygen, and pushing the phosphorus source at first preset temperature until the phosphorus source is deposited to the preset concentration; and when the phosphorus source is deposited to the preset concentration, reducing the temperature to second preset temperature, continuing to feed the phosphorus source and the
oxygen so as to perform phosphorus source deposition, and performing
laser doping to obtain a crystalline
silicon solar cell subjected to secondary deposition. After temperature reduction is performed, the phosphorus source and the oxygen are continued to be fed, so that the phosphorus source continues to be deposited on the surface of the silicon slice, and the concentration of the phosphorus source on the surface of the silicon slice is increased; a
laser doping process is performed on the crystalline
silicon solar cell silicon slice at relatively
high phosphorus source concentration, so that relatively low
laser energy can be adopted; and the required crystalline
silicon solar cell can be obtained.