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Semiconductor light-emitting device

A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1> / =0) and a quantum well layer being made of InY2Ga1-Y1N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
Owner:TOYODA GOSEI CO LTD

Differential pixel circuit and method of computer vision applications

ActiveUS20190181169A1Fast time of flight gatingFast signal transferTelevision system detailsSolid-state devicesLight sensingPhotodiode
A pixel cell for differential light sensing includes a plurality of photodiodes and a corresponding plurality of storage diodes. Each storage diode is disposed between a first adjacent photodiode and a second adjacent photodiode, and each storage diode is configured to receive photo charges from either or both of the first adjacent photodiode and the second adjacent photodiode. Each photodiode is disposed between a first adjacent storage diode and a second adjacent storage diode, and each photodiode is configured to transfer photo charges to either or both of the first adjacent storage diode and the second adjacent storage diode.
Owner:MAGIC LEAP
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