539results about How to "Quick evacuation" patented technology

A dilution ventilation control system for use in a one-pass, critical environments comprising: one or more one-pass, critical environments comprising, a variable source of supply airflow volume, an exhaust for completely exhausting the airflow volume supply from the critical environment and from a building comprising the critical environment through one or more exhaust ducts; and at least one an airflow control device provided in one or more of the ducts to vary the exhaust airflow volume from the critical environment; a facility monitoring system comprising at least one air contaminant sensor for sensing at least one air contaminant of the critical environment; a signal processing controller that generates one or more airflow command signals based at least in part on at least one sensed air contaminant; and a critical environment airflow controller that uses the airflow command signal to at least partially control the critical environment's supply and exhaust airflow volumes.

A sensor unit (10) for detecting a gas is configured with a pressure-tight measuring channel (11), with a gas inlet (12) for introducing the gas into the measuring channel, with a gas outlet (13) for removing the gas from the measuring channel, and with a pump unit (14) for evacuating the measuring channel. The measuring channel has a gas sensor (15) for detecting the gas and a heating unit (16) for heating the gas sensor. The sensor unit (10) is configured to be operated in a measuring mode and in a regeneration mode. The measuring channel (11) is evacuated and the gas sensor (15) is heated in the regeneration mode.

A new technique and Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures in semiconductor materials is disclosed. The Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures provides activation of the “Coulomb explosion” mechanism in a manner which does not invoke or require the conventional avalanche photoionization mechanism, but rather utilizes direct interband absorption to generate the Coulomb explosion threshold charge densities. This approach minimizes the laser intensity necessary for material removal and provides optimal machining quality. The technique generally comprises use of a femtosecond pulsed laser to rapidly evacuate electrons from a near surface region of a semiconductor or dielectric structure, and wherein the wavelength of the laser beam is chosen such that interband optical absorption dominates the carrier production throughout the laser pulse. The further application of a strong electric field to the semiconductor or dielectric structure provides enhancement of the absorption coefficient through a field induced redshift of the optical absorption. The use of this electric field controlled optical absorption is available in all semiconductor materials and allows precise control of the ablation rate. When used in conjunction with nanoscale semiconductor or dielectric structures, the application of a strong electric field provides for laser ablation on sub-micron lateral scales.

The present invention is an improved safety nosing component including a base element with channel member and a light emission element. The safety nosing component is manufactured by extrusion, co-extrusion, triple-extrusion, injection molding, insert injection molding, two-shot molding or a combination thereof. The present invention allows safety nosing components to be installed on architectural structures while also providing additional functionality.