41results about How to "Prevent the diffusion of impurities" patented technology

A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well.

In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.

A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

Prior to housing the crucible in the bowl, a consumable buffer ply is applied over at least a portion of the inside face of the bowl, the ply being constituted essentially by a non-rigid carbon fiber fabric for protecting the bowl from both physical and chemical interactions with the crucible. The buffer ply is essentially constituted by a flexible fabric selected from: a woven cloth, a knit, a multidirectional sheet, and a thin felt. Prior to putting the ply into place in the bowl, it is possible to form a thin deposit of pyrolytic carbon on the fibers of the fabric.