33results about How to "Partly suitable" patented technology

The present invention relates to a thermoplastic resin composition which comprises 100 parts by weight of a thermoplastic resin (component A) and 1 to 400 parts by weight of a granular inorganic filler (component B) comprising an inorganic filler having an average particle diameter of 0.01 to 100 μm and a water-soluble polyester resin binder, and having a bulk density of 0.4 to 1.5 g / mL; and a resin molded article obtained by molding the thermoplastic resin composition. The thermoplastic resin composition is improved in various properties such as extrusion moldability, rigidity, impact resistance, thermal stability and hue, and exhibits an excellent balance between these properties.

A galvanized steel sheet has a composition containing, by mass %, C: 0.05% or more and 0.5% or less, Si: 0.01% or more and 2.5% or less, Mn: 0.5% or more and 3.5% or less, P: 0.003% or more and 0.100% or less, S: 0.02% or less, Al: 0.010% or more and 0.5% or less, B: 0.0002% or more and 0.005% or less, Ti: 0.05% or less, a relationship of Ti>4N being satisfied, and the balance comprising Fe and inevitable impurities, and a microstructure containing 60% or more and 95% or less of tempered martensite in terms of area ratio and 5% or more and 20% or less of retained austenite in terms of area ratio.

In order to provide a steel sheet for hot pressing from which a hot-pressed part excellent in perforation corrosion resistance is obtainable and a method of manufacturing a hot-pressed part using the steel sheet for hot pressing, provided is a steel sheet for hot pressing having, sequentially on a surface of a base steel sheet: a plating layer I containing 60% by mass or more of Ni and the remainder consisting of Zn and inevitable impurities, a coating mass thereof being 0.01 to 5 g / m2; and a plating layer II containing 10 to 25% by mass of Ni and the remainder consisting of Zn and inevitable impurities, a coating mass thereof being 10 to 90 g / m2.

A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.

An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode.

Methods of assessing, such as characterizing or determining, condensate-associated characteristics of a compound, such as a test compound, and applications thereof are provided. For example, methods of determining a partition characteristic of a test compound in a target condensate, methods of determining a relative partition characteristic of a test compound in a target condensate, and methods of determining a condensate preference profile of a test compound are provided. Additionally, methods of designing and / or identifying and / or making a compound, or portion thereof, with a desired relative condensate partition characteristic are provided.