56results about How to "Minimize thermal expansion differences" patented technology

A heat exchange reactor including a housing, a plurality of tubes mounted in the housing and configured to carry a first fluid, and a baffle having a plurality of holes receiving the tubes. The baffle is configured to guide a second fluid provided within the housing to flow in a direction generally perpendicular to the tubes. The reactor includes various configurations for minimizing adverse effects of thermal expansion of the baffle and the tubes. The reactor is configured to minimize mechanical interference between the baffle and the tubes in both an operational state and a non-operational state, for example, by shaping the holes in the baffle to take into account thermal expansion. The reactor also includes a thermal insulator along a length of the tubes at a large temperature gradient zone within the reactor. The reactor further includes a heat transfer fin in contact with only one of the tubes.

On a substrate surface at a position facing an outer circumference end portion of a semiconductor element, a recessed section wherein a sealing adhesive resin is partially arranged is formed. Thus, while suppressing expansion of an arrangement region of a fillet portion (a portion spreading toward bottom) of the sealing adhesive resin, the inclination angle is increased. A stress load generated at the periphery of the semiconductor element due to thermal expansion differences and thermal shrinkage differences between members due to heating process and cooling process for mounting is reduced, and internal breakage of a semiconductor element mounting structure is eliminated.

The present invention relates to laser machining process and equipment. The laser machining process includes the following steps; setting the workpiece onto the working bench, heating the machined area of the workpiece to preset temperature, and machining the heated machined area with laser beam. The laser machining equipment includes one working bench for bearing the workpiece, one laser source to emit laser beam, and one heating source to preheat the machined area of the workpiece to preset temperature and reduce the temperature difference between the temperature of the machined area and the high temperature the laser beam generates.

A turbine rotor 10 is disposed in a steam turbine, into which high-temperature steam of 650°C or more is introduced, and separately configured of the portion made of the Ni-base alloy and the portion made of the CrMoV steel depending on a steam temperature and a metal temperature, and the individual portions having a small difference in coefficient of linear expansion are welded mutually.

A manufacturing method of a package carrier is provided. An insulation substrate having an upper surface, a lower surface, plural cavities located at the lower surface and plural through holes passing through the insulation substrate and respectively communicating with the cavities is provided. Plural vias is defined by the cavities and the through holes. A conductive material filling up the vias is formed to define plural conductive posts. An insulation layer having a top surface and plural blind vias extending from the top surface to the conductive posts is formed on the upper surface. A patterned circuit layer filling up the blind vias, being connected to the conductive posts and exposing a portion of the top surface is formed on the top surface. A solder mask layer is formed on the patterned circuit layer and has plural openings exposing a portion of the patterned circuit layer to define plural pads.

A steam turbine 20 is provided with a casing 109, a turbine rotor 25 disposed through the casing 109, and labyrinth portions 50, 55 which are disposed at the boundary between the casing 109 and the turbine rotor 25. The steam turbine 20 is further provided with a sealing steam pipe 65 for supplying sealing steam to the labyrinth portions 50, 55 and a gas supply pipe 60 for supplying the labyrinth portions 50, 55 with a cooling gas for cooling the turbine rotor 25 or a heating gas for heating the turbine rotor 25.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / ° C.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / ° C.

The present invention relates to a silver paste composition and to a solar cell using the same. The silver paste composition of the present invention is applied onto an anti-reflective film, and comprises silver powder, glass frit powder, an organic binder and a plasticizer. The silver paste composition for the formation of a front electrode of a solar cell according to the present invention can be printed into a uniform pattern, and has superior bonding force to a substrate.

The invention discloses a low-stress dipping pipe for an RH vacuum furnace. The low-stress dipping pipe sequentially comprises a refractory brick lining, a filling layer and a steel barrel from inside to outside. No hole is formed in the wall surface of the steel barrel. An annular round metal pipe or an annular round metal rod is welded to the bottom surface of the steel barrel. The outer wall of the lower portion of the top of the steel barrel and the outer wall of the annular round metal pipe or the outer wall of the annular round metal rod are each paved with a buffer layer. V-shaped metal anchoring pieces and double-V-shaped metal anchoring pieces are uniformly welded to the outer wall of the steel barrel or the outer wall of the annular round metal rod in the axial spaced layered circumferential direction of the steel barrel and penetrate through the buffer layers. According to the low-stress dipping pipe for the RH vacuum furnace, the problem that damage and deterioration are caused due to the fact that the difference of the material performances of all components in a dipping pipe complex structure is remarkable is effectively solved, and the comprehensive purposes of reducing the structural stress and the heat stress of the dipping pipe, improving the dipping pipe resistance to crack, stripping and damage and the integrality and the structural stability of the dipping pipe, prolonging the service life of the dipping pipe and the like are achieved.