55results about How to "Minimize thermal expansion differences" patented technology

A heat exchange reactor including a housing, a plurality of tubes mounted in the housing and configured to carry a first fluid, and a baffle having a plurality of holes receiving the tubes. The baffle is configured to guide a second fluid provided within the housing to flow in a direction generally perpendicular to the tubes. The reactor includes various configurations for minimizing adverse effects of thermal expansion of the baffle and the tubes. The reactor is configured to minimize mechanical interference between the baffle and the tubes in both an operational state and a non-operational state, for example, by shaping the holes in the baffle to take into account thermal expansion. The reactor also includes a thermal insulator along a length of the tubes at a large temperature gradient zone within the reactor. The reactor further includes a heat transfer fin in contact with only one of the tubes.

The invention discloses a filter relating to the field of communication equipment. The filter can reduce the possibility that a welding spot of a medium resonator is cracked owning to the difference of thermal expansion coefficient. The filter provided by the embodiment of the invention comprises a medium resonator, a chamber body and a connecting piece, wherein the medium resonator is arranged in the chamber body; the medium resonator is welded on the connecting piece that is connected with the chamber body together; the medium resonator is not directly contacted with the chamber body; the difference of the thermal expansion coefficient of the connecting piece and the thermal expansion coefficient of the medium resonator is less than that of the thermal expansion coefficient of the chamber body and the thermal expansion coefficient of the medium resonator, and / or the connecting piece is a deformation damping structural part with the elastic deformation capability higher than that of the chamber body. The filter is applied to the design concept on a novel filter and is mainly applied to a novel comb-shaped linear medium resonation mode.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / ° C.

On a substrate surface at a position facing an outer circumference end portion of a semiconductor element, a recessed section wherein a sealing adhesive resin is partially arranged is formed. Thus, while suppressing expansion of an arrangement region of a fillet portion (a portion spreading toward bottom) of the sealing adhesive resin, the inclination angle is increased. A stress load generated at the periphery of the semiconductor element due to thermal expansion differences and thermal shrinkage differences between members due to heating process and cooling process for mounting is reduced, and internal breakage of a semiconductor element mounting structure is eliminated.

The present invention relates to laser machining process and equipment. The laser machining process includes the following steps; setting the workpiece onto the working bench, heating the machined area of the workpiece to preset temperature, and machining the heated machined area with laser beam. The laser machining equipment includes one working bench for bearing the workpiece, one laser source to emit laser beam, and one heating source to preheat the machined area of the workpiece to preset temperature and reduce the temperature difference between the temperature of the machined area and the high temperature the laser beam generates.

A turbine rotor 10 is disposed in a steam turbine, into which high-temperature steam of 650°C or more is introduced, and separately configured of the portion made of the Ni-base alloy and the portion made of the CrMoV steel depending on a steam temperature and a metal temperature, and the individual portions having a small difference in coefficient of linear expansion are welded mutually.

A device for connecting movable parts with structural components of airplanes or other high-speed vehicles, including at least one fitting provided with at least one bearing. In order to provide such a device exhibiting low thermal stresses, a low weight, a high bearing capacity and a producibility as simple as possible, it is provided that the at least one fitting is made of a synthetic material and glued with the movable part. The resin transfer molding (RTM)-method is particularly suitable to produce the fitting.

A steam turbine plant of the present invention includes a heat source device that heats a low temperature fluid by a heat source medium to obtain a high temperature fluid, a steam generating device that generates steam by heat exchange with the high temperature fluid, a steam turbine that is driven by the steam, a heating flow path that is disposed on an outer surface of a casing of the steam turbine, a high temperature fluid supply passage that is branched from a flow path of the high temperature fluid in the steam generating device, is connected to the heating flow path, and supplies the high temperature fluid to the heating flow path, and a high temperature fluid flow rate regulating device that regulates a flow rate of the high temperature fluid flowing through the high temperature fluid supply passage.

In one embodiment, the LED package comprises: (a) a submount comprising a substrate, at least one electrical interface, and a non-conductive reflective material disposed over substantially all of submount except for the at least one electrical interface; and (b) an LED chip having sides and at least one contact, the LED chip being flip-chip mounted to the submount such that the at least one contact is electrically connected to the at least one electrical interface, the LED chip covering a substantial portion of the at least one electrical interface, substantially all of the chip extending above the reflective material.

A manufacturing method of a package carrier is provided. An insulation substrate having an upper surface, a lower surface, plural cavities located at the lower surface and plural through holes passing through the insulation substrate and respectively communicating with the cavities is provided. Plural vias is defined by the cavities and the through holes. A conductive material filling up the vias is formed to define plural conductive posts. An insulation layer having a top surface and plural blind vias extending from the top surface to the conductive posts is formed on the upper surface. A patterned circuit layer filling up the blind vias, being connected to the conductive posts and exposing a portion of the top surface is formed on the top surface. A solder mask layer is formed on the patterned circuit layer and has plural openings exposing a portion of the patterned circuit layer to define plural pads.

A steam turbine 20 is provided with a casing 109, a turbine rotor 25 disposed through the casing 109, and labyrinth portions 50, 55 which are disposed at the boundary between the casing 109 and the turbine rotor 25. The steam turbine 20 is further provided with a sealing steam pipe 65 for supplying sealing steam to the labyrinth portions 50, 55 and a gas supply pipe 60 for supplying the labyrinth portions 50, 55 with a cooling gas for cooling the turbine rotor 25 or a heating gas for heating the turbine rotor 25.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / ° C.

The present invention relates to a photovoltaic (PV) concentrator receiver for concentrated illumination which comprises a substrate with at least one solar cell, wherein on the front surface of the substrate and the at least one solar cell an encapsulation material and a cover plate are disposed. The edges of the receiver are protected by a frame. The inventive PV concentrator receiver can be used for producing electricity from concentrated solar radiation.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / ° C.

The invention belongs to the technical field of sensors, and particularly relates to a method for preparing a dense diffusion barrier of a limiting current type oxygen sensor with a co-permeation method. The method comprises steps as follows: La2O3, SrCO3, Ga2O3 and MgO are taken as raw materials, a La0.8Sr0.2Ga0.83Mg0.17O2.815 sheet is prepared with a solid-phase synthesis method, the La0.8Sr0.2Ga0.83Mg0.17O2.815 sheet is arranged at the lower part of a forming die, the upper part of the forming die is filled with transition metal oxide powder, pressure is kept for 5-10 min under the pressure intensity of 6-10 MPa, then sintering is performed for 5-50 h at the temperature of 1,400-1,600 DEG C, and after natural cooling, the dense diffusion barrier of the limiting current type oxygen sensor is obtained. The dense diffusion barrier prepared with the method is dense, uniform and pore-free in structure and firm in combination, the thermal expansion difference between a matrix and the dense diffusion barrier is reduced to the minimum, and the dense diffusion barrier has the advantages of short preparation period and high sensitivity.

The present invention relates to a silver paste composition and to a solar cell using the same. The silver paste composition of the present invention is applied onto an anti-reflective film, and comprises silver powder, glass frit powder, an organic binder and a plasticizer. The silver paste composition for the formation of a front electrode of a solar cell according to the present invention can be printed into a uniform pattern, and has superior bonding force to a substrate.

The invention discloses a low-stress dipping pipe for an RH vacuum furnace. The low-stress dipping pipe sequentially comprises a refractory brick lining, a filling layer and a steel barrel from inside to outside. No hole is formed in the wall surface of the steel barrel. An annular round metal pipe or an annular round metal rod is welded to the bottom surface of the steel barrel. The outer wall of the lower portion of the top of the steel barrel and the outer wall of the annular round metal pipe or the outer wall of the annular round metal rod are each paved with a buffer layer. V-shaped metal anchoring pieces and double-V-shaped metal anchoring pieces are uniformly welded to the outer wall of the steel barrel or the outer wall of the annular round metal rod in the axial spaced layered circumferential direction of the steel barrel and penetrate through the buffer layers. According to the low-stress dipping pipe for the RH vacuum furnace, the problem that damage and deterioration are caused due to the fact that the difference of the material performances of all components in a dipping pipe complex structure is remarkable is effectively solved, and the comprehensive purposes of reducing the structural stress and the heat stress of the dipping pipe, improving the dipping pipe resistance to crack, stripping and damage and the integrality and the structural stability of the dipping pipe, prolonging the service life of the dipping pipe and the like are achieved.