43results about How to "Large film thickness" patented technology

A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X<1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.

A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

A manufacturing method for producing a stained silicon wafer has the steps of forming an Si1-xGex composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si1-xGex uniform composition layer of which Ge concentration is constant on the Si1-xGex composition-graded layer, forming a stain-relaxed Si1-yGey layer of which Ge concentration y is constant while y satisfies relationship of 0.5x≦y<x on the Si1-xGex uniform composition layer and epitaxially growing a strained Si layer on the strain-relaxed Si1-yGey layer.

A pixel in the panel includes sub-pixels 100a, 100b, and 100c. Non-light-emitting cells 100d and 100e are provided between the pixel and adjacent pixels on both sides thereof, respectively. The organic light-emitting layer of sub-pixel 100a and non-light-emitting cell 100d are separated by bank 105a. Similarly, the organic light-emitting layer of sub-pixel 100c and non-light-emitting cell 100e are separated by bank 105d; the organic light-emitting layers of sub-pixels 100a and 100b are separated by bank 105b; and the organic light-emitting layers of sub-pixels 100b and 100c are separated by bank 105c. Inclination angle θaa of sidewall 105aa of bank 105a adjacent to sib-pixel 100a and inclination angle θdc of sidewall 105dc of bank 105d adjacent to sib-pixel 100c are larger than other inclination angles θba, θbb, θcb, and θcc.

A main magnetic pole layer is formed on an insulating layer flattened into a high-flatness surface, and a yoke layer having a large film thickness is formed on the main magnetic pole layer independently of the main magnetic pole. The main magnetic pole layer has a front end surface formed in a shape with a width size gradually increasing in a direction of track width as the front end surface departs farther away from an auxiliary magnetic pole layer. A perpendicular magnetic recording head can be provided which can suppress the occurrence of fringing in a recording pattern, and can form the main magnetic pole layer with high pattern accuracy, and can satisfactorily introduce a recording magnetic field to a fore end of the main magnetic pole layer.

A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

A semiconductor device 100 includes a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 12 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from Hf and Zr.

The present invention provides a method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitaxial growth is performed in such a manner that a reflectivity of a surface of the SOI wafer on which the epitaxial layer is grown in a wavelength region of a heating light at the start of the epitaxial growth falls within the range of 30% to 80%. As a result, in the method for manufacturing the SOI wafer in which a thickness of the SOI layer is increased by growing the epitaxial layer on the SOI layer of the SOI wafer having the oxide film and the SOI layer formed on the base wafer, a method for manufacturing a high-quality SOI wafer with less slip dislocation and others is provided.

A semiconductor device includes bit lines provided in a semiconductor substrate; an ONO film that is provided along the surface of the semiconductor substrate and is made of a tunnel oxide film, a trap layer, and a top oxide film; and an oxide film that is provided on the surface of the semiconductor substrate in the middle between the bit lines and contacts the side face of the ONO film, in which the film thickness of the oxide film is larger than the sum of the thicknesses of the tunnel oxide film and the top oxide film, and smaller than the thickness of the ONO film.

A pixel in the panel includes sub-pixels 100a, 100b, and 100c. The sub-pixel 100a is defined by banks 105a and 105b. The sub-pixel 100b is defined by banks 105b and 105c. The sub-pixel 100c is defined by banks 105c and 105d. Organic light-emitting layers are formed in sub-pixels by, for each pixel, applying ink to the sub-pixels 100a, 100b, and 100c in the stated order and drying the applied ink. With regard to a sidewall 105aa of the bank 105a, sidewalls 105ba and 105bb of the bank 105b, and a sidewall 105cb of the bank 105c, inclination angles of the sidewalls satisfy relationships: inclination angle θaa and inclination angle θba are equal, and inclination angle θcb is larger than inclination angle θbb.

Disclosed are an organic electroluminescent display and a method for preparing the same, and a display device. The organic electroluminescent display comprises: a base substrate; an organic electroluminescent pixel array, which is set on the base substrate; a packaging coverplate or a packaging film, which is covered outside the organic electroluminescent pixel array; and a phase difference film and a polarization functional film located inside the packaging coverplate or the packaging film and attached to the organic electroluminescent pixel array in turn. In the organic electroluminescent display according to the invention, the unnecessary films, such as a TAC films that need to be attached to the two sides of a polarization functional film in an existing circular sheet polarizer and a binding agent layer, etc., can be omitted, thereby the transmittance of a display can be improved, and the contrast of a display can be increased; moreover, the overall thickness of a display may be reduced, and the problem of being difficult to roll up may be avoided; and there exists no interference of oxygen and aqueous vapor, thus the durability of the circular sheet polarizer can be increased.

A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.

A plating resist film 2 is formed on a wiring board substrate 1 as a core material of a multilayer printed wiring board, then a through-hole 3 is formed, and through-hole conductor 4 is formed along the wall surface of the through-hole 3 and the through-hole surface of the plating resist film 2, so that protrusion portion 4a is formed in the through-hole conductor 4. The plating resist film 2 is then stripped off and a panel plating layer 5 is formed on the surface of the wiring board substrate 1 and the through-hole conductor 4 so that the through-hole 4 and the panel plating layer 5 are connected with the protrusion 4a coated, and thus the connection area can be increased.