500results about How to "Excellent luminous properties" patented technology

Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

An organic electroluminescence device, includes: a pair of electrodes; and at least one organic layer including a light emitting layer, the light emitting layer being provided between the pair of electrodes, wherein at least one layer of the at least one organic layer contains a compound represented by formula (I) as defined in the specification.

A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.

An organic electroluminescent element comprising a pair of electrodes and at least one organic compound layer including a luminescent layer between the pair of electrodes, wherein at least one of the at least one organic compound layer comprises a compound represented by the following formula (I): wherein in formula (I), Q1 represents an atomic group necessary for forming an unsaturated ring together with the carbon atom; Q2 and Q3 each independently represent an atomic group necessary for forming an unsaturated ring together with the nitrogen atom; X represents a partial structure comprising an atom that is linked to the platinum atom; A1 represents a linking group; B1, B2 and B3 each independently represent a linking group or a single bond; m and n each independently represent 0 or 1; and at least one of m and n is not 1.

The invention discloses a nitrogen doped carbon quantum dot as well as a preparation method and an application thereof, belonging to the technical field of material science. The preparation method comprises the steps: after mixing organic acid and organic amine, directly performing a hydrothermal reaction to prepare a nitrogen doped carbon quantum dot water dispersion solution, and extracting and drying the nitrogen doped carbon quantum dot water dispersion solution to obtain a nitrogen doped carbon quantum dot solid. The size of the nitrogen doped carbon quantum dot is not more than 10 nm, the nitrogen content is not more than 50 percent, the surface of the nitrogen doped carbon quantum dot contains amino, carboxyl and hydroxyl; and the quantum efficiency is 39.8-50 percent. The preparation method is simple to operate, environment-friendly, low in equipment requirement; and the prepared nitrogen doped carbon quantum dot has excellent light emitting property, and can be widely applied to fields such as photoelectric materials, biological imaging and fluorescence probe.

A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.

To provide a new phosphor of which fluorescence contains much red light component and has a large full width at half maximum, the crystal phase represented by the formula [I] is included in the phosphor.R3−x−y−z+w2MzA1.5x+y−w2Si6−w1−w2AlW1+w2Oy+w1N11−y−w1   [I](R represents La, Gd, Lu, Y and / or Sc, M represents Ce, Eu, Mn, Yb, Pr and / or Tb, A represents Ba, Sr, Ca, Mg and / or Zn, and x, y, z, w1 and w2 are the numeric values in the following ranges:( 1 / 7)≦(3−x−y−z+w2) / 6<(½),0<(1.5x+y−w2) / 6<(9 / 2),0<x<3, 0≦y<2, 0<z<1, 0≦w1≦5, 0≦w2≦5, and0≦w1+w2≦5.)

An oxonitride phosphor which comprises a crystal containing at least one Group II element selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one Group IV element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth metal as an activator R. The oxonitride phosphor is exited by an excitation light source of an ultraviolet to visible region and emits a light having a color of from a blue-green region to a yellow region.

A supersonic chemical preparation method for grapheme quantum dots relates to a preparation method for grapheme quantum dots, and especially relates to a method for preparing a grapheme quantum dot solution with the characteristics of good monodispersity and luminescence performance using a simple and environmentally friendly process with cheap carbon black or graphite powder as the raw material. The preparation method provided in the invention is characterized by adding a dispersant into carbon black or graphite and obtaining grapheme quantum dots under the action of supersonic wave. The grapheme quantum dot solution prepared in the invention has the characteristics of luminescence, monodispersion, water-solubility, etc.

A fluoride phosphor activated with tetravalent Mn can absorb blue light and emit red light, and is represented by the general formula: K2[M1-aMn4+aF6] (M is at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn, and a is 0<a<0.2). The particles of the phosphor have a surface region where the concentration of tetravalent Mn is lower than the inner region of the phosphor particles.

The present invention provides a semiconductor light emitting element realizing lower resistance, higher output, higher power efficiency, higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and aboundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer.

An organic electroluminescent device is disclosed, which can obtain high luminance and high efficiency. The organic electroluminescent device includes a luminescent layer formed by doping a phosphor material on a host material expressed by the following chemical formula: where R is any one selected from a group consisting of H, an alkyl group, an allyl group, and halogen.

To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet / ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b) / m<7.0, a / m=0.5, b / a>2.5, n>o, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm.

Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

The invention relates to a process of producing a display panel, the process comprising a step of providing plural display regions on the principal plane of a support substrate, a step of applying an adhesive to the principal plane of the support substrate so as to cover the display region, to form a seal layer and laminating a seal plate through the seal layer to form a laminate and a step of dividing the laminate at the positions between the display adjacent to each other to produce plural light emitting panels each having the display region, the process further comprising a step of forming an adhesion preventive layer that inhibits adhesion to the adhesive on the principal plane of the support substrate between the display regions adjacent to each other prior to the application of the adhesive.

The present invention provides an LED light source, and particularly provides an illuminating device with an LED surface light source covered with an optical film. The device includes: an LED point light source, an illuminator, and a heat sink; wherein the illuminator is an optically transparent solid geometry with an optical film covering the outer surface thereof; wherein at least one outer surface of the solid geometry is an incident surface and at least one outer surface of the solid geometry is an emergence surface; and the optical film is a solid optical medium film; and the LED point light source is fixed on the heat sink, matching with the incident surface of the illuminator.

In a method of forming an organic light emitting structure, a plurality of first electrodes spaced apart from each other is formed on a lower substrate. A first organic layer covering the first electrodes is formed on the lower substrate. A preliminary pixel defining layer is formed on the first organic layer. The preliminary pixel defining layer includes a photosensitive material, and is selectively exposed to light so that the preliminary pixel defining layer and a portion of the first organic layer beneath the preliminary pixel defining layer are transformed into a pixel defining layer and a first organic layer pattern, respectively. An emitting layer is formed on the first organic layer exposed by the pixel defining layer. A second organic layer is formed on the emitting layer. A second electrode is formed on the second organic layer.

Disclosed is a method for producing a group III nitride semiconductor layer having excellent crystallinity which can be suitably used for forming a light-emitting device having excellent internal quantum efficiency and light extraction efficiency. Specifically disclosed is a method for producing a single crystal group III nitride semiconductor layer (103) on a substrate (101), which comprises a substrate processing step wherein a plurality of projected portions (12) composed of surfaces 12c not parallel to (0001)C-plane of the substrate (101) are formed on the (0001)C-plane, thereby forming an upper surface (10) composed of a flat surface (11) composed of the(0001)C-plane and the projected portions (12); and an epitaxial step for epitaxially growing the group III nitride semiconductor layer (103) on the upper surface (10), thereby embedding the projected portions (12) in the group III nitride semiconductor layer (103).

Disclosed herein are a nanocrystal, a method for preparing the nanocrystal, and an electronic device comprising the nanocrystal. The nanocrystal comprises a semiconductor nanocrystal core, a non-semiconductor buffer layer surrounding the semiconductor nanocrystal core, and a shell surrounding the buffer layer.

The package has a base body (51) with a mounting portion for mounting a light-emitting unit. A frame body is joined to an outer edge of the body (51) to surround the portion. A wiring conductor has its one end formed on an upper surface of the base body, to electrically connect an electrode of the light emitting unit. The light transmitting unit (53) is inside the frame body to cover the light emitting unit. - Independent claims are also included for the following: - (A) a light-emitting apparatus comprising a package for housing a light emitting unit - (B) an illumination apparatus constructed by setting up a light-emitting apparatus in a predetermined arrangement.

Provided is an inorganic thin film electroluminescent device including a lower electrode, a lower insulating layer, a phosphor, an upper insulating layer, and an upper electrode, and the method for manufacturing the same, whereby it is possible to obtain the inorganic thin film electroluminescent device capable of realizing high brightness, excellent luminescence efficiency, and low breakdown field.

A light-emitting element drive circuit capable of controlling the drive current of a light-emitting element in consideration of changes in a threshold value of the light-emitting element. A laser diode 1 emits light in accordance with a bias current Ib of a bias current drive circuit 2 and a light-emitting current Ip of a data current drive circuit 3. A photodiode 4 outputs a monitor current Im that corresponds to the optical output of the laser diode 1. A bias current feedback circuit 8 detects a change in the threshold current in accordance with the current Im, and outputs a control signal CS1. The bias current drive circuit 2 generates a bias current Ib that corresponds to the threshold current Ith of the laser diode 1 after the change. A light-emitting current feedback circuit 9 detects a change in the optical output of the laser diode 1 in accordance with the current Im, and outputs a controls signal CS2. The data current drive circuit 3 generates a light-emitting current Ip relative to a pre-determined optical output of the laser diode 1 in accordance with the control signal CS2.

The invention concerns a vehicle lamp comprising an elongate light guide, and a light source which is arranged at one end of the light guide and whose light is coupled into the light guide and at least partially passed to an oppositely disposed coupling-out end where it is coupled-out. The light guide is of a multi-member configuration and on the side towards the vehicle has a plurality of limbs which are curved to differing degrees.

An organic electroluminescent device comprising a pair of electrodes and a light emitting layer, a hole transport layer containing a hole transporting material, and an electron transport layer provided between the pair of electrodes wherein, the light emitting layer contains at least two host materials and at least one red phosphorescent material, and the hole transporting material in the hole transport layer has a small ionization potential than the two host materials in the light emitting layer.

Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film of low dielectric constant having an opening exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer and a second electrode are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film of low dielectric constant, the surface treatment of the pixel electrode can be performed using O2 plasma to thereby enhance luminance properties.

The present invention relates to a specific combination of dopant compounds and host compounds. By using a combination of the dopant and host compounds according to the present invention, an organic electroluminescent device has improved current efficiency compared with conventional light-emitting material, and thus has improved power efficiency at a low driving voltage.