The service lifetime of an
ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the
ion source and of an extraction
electrode, using reactive
halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the
ion beam optics, and
thermal control of the extraction
electrode that prevents formation of deposits or prevents
electrode destruction. An apparatus comprised of an
ion source for generating
dopant ions for
semiconductor wafer processing is coupled to a
remote plasma source which delivers F or Cl ions to the first
ion source for the purpose of cleaning deposits in the first
ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when
decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental
arsenic and
phosphorus are used, and which serve to enhance beam stability during
ion implantation.