A
phase shift mask blank 10 having a very thin film (a
chromium nitride film) 2 provided on a
quartz substrate 1 for forming a phase shift pattern 1P and a
resist film 3 formed thereon is used as a material, a
resist pattern 3P is formed on the
resist film 3, the very thin film 2 is etched by using the resist pattern as a
mask, thereby forming a very thin film pattern 2P, the
quartz substrate 1 is etched by using the very thin film pattern 2P as the
mask, thereby forming the phase shift pattern 1P, and a light shielding film 4 is formed on the substrate 1 over which the formation of the phase shift pattern 1P and the removal of the resist pattern 3 are completed, and the light shielding film 4 is subjected to selective
etching by using a resist 5, thereby exposing the phase shift pattern 1P while leaving a shielding portion 4A in a necessary part. Thus, a
phase shift mask 20 is obtained. The thickness of the very thin film 2 is set to be a minimum thickness required for forming a phase shift pattern on the
quartz substrate 1 by using the very thin film pattern 2P as the
mask.