The invention discloses a method for preparing an organic ammonium metal halide film. A half-closed type carrier gas free hot wall type low-pressure chemical vapor deposition method process is adopted to prepare the organic ammonium metal halide film. The method comprises the following steps: firstly, preparing a metal halide (MX2) film on a quartz substrate by using a dry method or a wet method, and transferring the metal halide (MX2) film into a glass tube for annealing, wherein one end of the glass tube is sealed and the other end is grounded; secondly, transferring the energy to organic ammonium (AX) powder inside the glass tube through a hot wall, forming steam blocks through self-diffusion of AX steam in low vacuum, performing chemical reaction on MX2 with a hot substrate to generate the film which is uniform in thickness, good in appearance, high in light absorption rate and smooth in surface, and performing in-situ annealing so as to generate the AMX3 film which is dense in structure and high in crystallinity degree. The method has the advantages that in-situ annealing can be performed in the film formation process, continuous vacuuming is not needed, the preparation time is shortened, the energy consumption is reduced, the filming efficiency is high, the charge capture trap in the film is reduced, and the carrier mobility is increased.