Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

38results about How to "High-speed writing" patented technology

Nonvolatile storage device and data writing method thereof

A nonvolatile storage device according to the invention is a nonvolatile storage device into which data is inputted from an external device on a sector unit, and includes: a main memory which is nonvolatile and in which data is written on a page unit, the page unit being larger than the sector unit; an auxiliary memory which holds at least a single page worth of the input data; a memory judging unit that judges whether or not data held in the auxiliary memory is equal to or larger than data of the page unit; and a memory control unit that writes, in a new page of the main memory on the page unit, the data held in the auxiliary memory when the memory judgment unit judges that the data held in the auxiliary memory is equal to or larger than data of the page unit.
Owner:PANASONIC CORP

Data-storage apparatus, data-storage method and recording/reproducing system

A data-storage apparatus, a data-storage method and a recording / reproducing system are provided, which effectively use the time elapsing before data is transferred to be written in a recording medium, such as disc-seeking time and disc-rotation standby time, thereby to raise the speed of transferring data. A hybrid storage apparatus has two storage areas, i.e., a disc and a nonvolatile solid-state memory. The disc and the memory have a disc cache area, a system area, and a user area each. If data is transferred from the host apparatus, it is written into the cache area of the nonvolatile solid-state memory that can be accessed at high speed for the first super cluster. While the data being so written, the head is moved to a prescribed position. Any data coming after the head is moved to this position is written into the cache area.
Owner:SONY CORP

Magnetoresistance effect element and magnetic random access memory

A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
Owner:KIOXIA CORP

Data processor with flash memory, and method for accessing flash memory

A data processor includes a flash memory that stores a plurality of types of data therein, a random access memory that stores record data information therein, and a controller that can access the flash memory and the RAM. The record data information indicates a head address in the flash memory and a data length corresponding to latest data of each of the plurality of types of data. The controller reads, from the flash memory, the latest data of a type of a reading target among the plurality of types of data, with reference to the record data information.
Owner:RENESAS ELECTRONICS CORP

Pattern writing apparatus and block number determining method

A pattern writing apparatus comprises a DMD for spatially modulating light from a light source and directing modulated light beams to a plurality of irradiation regions, respectively, which are arranged on a substrate two-dimensionally. A pattern is written by controlling the DMD while scanning the plurality of irradiation regions. The plurality of irradiation regions form a plurality of irradiation blocks arranged in a column direction, in each of which irradiation regions are arranged in a row direction. In DMD, writing signal is sequentially inputted to mirror blocks to be used out of a plurality of mirror blocks corresponding to the plurality of irradiation blocks, respectively. When writing a pattern, an operation part determines the number of mirror blocks to be used where scan speed can be maximized, in consideration of required time for input of the writing signal to the DMD and light amount applied on the substrate.
Owner:DAINIPPON SCREEN MTG CO LTD

Perpendicular magnetic recording head for high frequency drive

Embodiments of the invention provide a perpendicular magnetic head with a narrow track and excellent high frequency characteristics. In one embodiment, a recording magnetic head includes coil conductors and magnetic pole pieces putting the same therebetween, in which a main magnetic pole piece is formed into a planar structure and a magnetic film connected with the main magnetic pole piece in a magnetic coupling relation is curved in the direction of the film thickness. Further, a shield material disposed near the main magnetic pole piece is made of a material of higher resistance than that of the material for the read shield.
Owner:WESTERN DIGITAL TECH INC

Microcomputer with universal serial bus interface circuit and method of controlling the same

A microcomputer includes a universal serial bus (USB) interface circuit wherein a program is written from a host to the microcomputer at high speed by utilizing a USB cable for connecting the host to a peripheral device. Nonvolatile memory, such as flash ROM, for program storage has a first program area to which program data transmitted from a personal computer is to be written and a second program area storing a write control program. Program data stored temporarily in RAM is written to the first program area of the flash ROM through a USB interface circuit in accordance with the write control program.
Owner:SEMICON COMPONENTS IND LLC

Storage device, memory cell, and data writing method

A memory cell (1) includes a first storage circuit (2) with a write time t1 and a data retention time τ1 and a second storage circuit (3) with a write time t2 and a data retention time τ2 (t1<t2 and τ1<τ2). A row decoder supplies write data to the memory cell (1) via a word line (WL) to write the data on the first storage circuit (2) over a write time tW that is longer than the write time t1 and that is shorter than the write time t2. A PL control circuit (4) supplies power to the memory cell (1) for a time that is longer than the write time t2 when the write data is supplied to the memory cell (1), writes, on the second storage circuit (3), the data written on the first storage circuit (2) once the supply of the write data is stopped, and stops the supply of the power to the memory cell (1) after a lapse of the write time t2 following start of the supply of the write data.
Owner:TOHOKU UNIV

Magnetic memory

A magnetic memory 1 having a wire 5 extended in a direction of arbitrary decision, an electro-resistivity effect element 4 disposed adjacently to the wire 5, and a counter element side yoke 20B disposed adjacently on the side opposite the magneto-resistivity effect element 4 in the wire 5 and having the thickness of the counter element side yoke 20B so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.
Owner:TDK CORPARATION

Storage device and semiconductor device

A low-power storage device is provided. The storage device includes a first transistor, a second transistor, a logic element, and a semiconductor element. The second transistor controls supply of a first signal to a gate of the first transistor. When the potential of a second signal to be input is changed from a first potential into a second potential lower than the first potential, the logic element changes the potential of a first terminal of the first transistor from a third potential lower than the second potential into the first potential after the logic element changes the potential of the first terminal of the first transistor from the second potential into the third potential. The semiconductor element has a function of making a second terminal of the first transistor floating. The first transistor includes a channel formation region in an oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD

Optical information storage medium

InactiveUS20060003135A1Alleviate power needsConfirm stabilityLayered productsRecord information storageReflective layerRecording layer
An optical information storage medium includes a first substrate, a first recording layer, a first reflective layer, a spacer layer, a second recording layer, a barrier layer, a second reflective layer, and a second substrate. In this case, the first recording layer is disposed above the first substrate. The first reflective layer is disposed above the first recording layer. The spacer layer is disposed above the first reflective layer. The second recording layer, which is made of inorganic material, is disposed above the spacer layer. The barrier layer is disposed above the second recording layer. The second reflective layer, which is made of inorganic material, is disposed above the barrier layer. The second substrate is disposed above the second reflective layer.
Owner:PRODISC TECH INC

Polymerizable composition and lithographic printing plate precursor

A polymerizable composition comprising: a polyurethane resin synthesized by using a compound represented by the following formula (I) as one of starting materials; a photopolymerization or thermal polymerization initiator; and an addition-polymerizable compound having an ethylenically unsaturated bond: wherein X represents a tri- or higher valent atom; R1 and R2 each independently represent a single bond or an alkylene group optionally having a substituent, provided that R1 and R2 do not represent a single bond at a same time; A represents a straight chain linking group; and n is an integer of from 1 to 5.
Owner:FUJIFILM CORP +1

Semiconductor device

A semiconductor device includes a first conductor, a second conductor, a first insulator, a second insulator, a third insulator, a semiconductor, and an electron trap layer. The semiconductor includes a channel formation region. The electron trap layer overlaps with the channel formation region with the second insulator interposed therebetween. The first conductor overlaps with the channel formation region with the first insulator interposed therebetween. The second conductor overlaps with the electron trap layer with the third insulator interposed therebetween. The second conductor does not overlap with the channel formation region.
Owner:SEMICON ENERGY LAB CO LTD

Semiconductor memory device

There provided a semiconductor memory device which ensures writing to all memory cells regardless of fluctuations in properties of the memory cells caused by manufacturing error or the like and can reduce write operation time and power consumption. Write operations for a memory cell 1 and a dummy memory cell 1a are controlled based on a write amplifier control signal WAE. Write operation end timing is determined based on a write completion signal WRST which indicates a storage state of the dummy memory cell 1a. The dummy memory cell 1a and peripheral circuitry are designed so that write time required for the dummy memory cell 1a is more than or equal to a maximum of write time required for the memory cells 1.
Owner:PANASONIC CORP

Semiconductor device and manufacturing method thereof

To provide a semiconductor device suitable for high reliability and high-speed operation. The semiconductor device includes a first conductor, a first insulator, a second insulator, a semiconductor, and an electron trap layer. The semiconductor includes a channel formation region. The first conductor includes a region overlapping with the channel formation region with the first insulator provided therebetween. The second insulator is placed to include a region in contact with a side surface of the first conductor. The electron trap layer is placed to face the first conductor with the second insulator provided therebetween.
Owner:SEMICON ENERGY LAB CO LTD

Data processor with flash memory, and method for accessing flash memory

A data processor includes a flash memory that stores a plurality of types of data therein, a random access memory that stores record data information therein, and a controller that can access the flash memory and the RAM. The record data information indicates a head address in the flash memory and a data length corresponding to latest data of each of the plurality of types of data. The controller reads, from the flash memory, the latest data of a type of a reading target among the plurality of types of data, with reference to the record data information.
Owner:RENESAS ELECTRONICS CORP

Pattern writing apparatus and pattern writing method

A pattern writing apparatus for writing a pattern on a photosensitive material comprises a head provided with a DMD having a micromirror group which modulates reflected light, a stage holding a substrate, and mechanisms for moving the head and the stage relative to each other. In the pattern writing apparatus, for pattern writing, an irradiation region group on a substrate, which corresponds to the micromirror group of the DMD, is scanned in a main scanning direction that is angled relative to the direction of arrangement of the irradiation region group. The irradiation region group is also intermittently moved in the sub-scanning direction by a distance shorter than the width of the irradiation region group in the sub-scanning direction, for pattern writing of the entire substrate.
Owner:DAINIPPON SCREEN MTG CO LTD

Optimal Power Control

The present invention relates to determining an optimised write power used for writing electronic data on optical disc and includes a method, a device and a computer program product for determining a write power for writing electronic data on a medium (32,108), based on a sequence of written data, using a power control model including a written data deviation measure, a written data asymmetry and a written data asymmetry target value, comprising the steps determining the written data deviation measure for the sequence of written data (step 202), adjusting the written data asymmetry target value in relation to the written data asymmetry, if the written data deviation measure has changed (steps 218, 220, 226, 228), determining the write power in dependence of written data asymmetry (step 210), and writing another sequence of data on the medium using said determined write power (step 212), so as to obtain power optimised writing of data.
Owner:KONINKLIJKE PHILIPS ELECTRONICS NV

Electrooptical device, electronic device, and control method of electrooptical device

A precharge voltage terminal as a connection unit that is for connection with an external precharge voltage output unit that outputs a precharge voltage, a voltage switching circuit that is connected to a data line drive circuit and the precharge voltage terminal in an input stage, is connected to data lines in an output stage, and switches a connection target of the data lines between the data line drive circuit and the precharge voltage terminal, and a control circuit that controls the voltage switching circuit such that the connection target of the data lines is switched to the precharge voltage terminal and the precharge is supplied to the data lines in a fly-back period before a tone display period in which a voltage of an image signal is supplied to pixels via the data lines are provided.
Owner:SEIKO EPSON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products