41results about How to "Good quality factor" patented technology

A novel microwave dielectric ceramic and a preparation method of the novel microwave dielectric ceramic belong to a microwave dielectric material and the technical field of microwave dielectric material manufacture. The microwave dielectric ceramic is composed of K, Dy, Ho, Er, Yb, Lu and Ti in modes of carbonate and oxide, a chemical formula of the microwave dielectric ceramic is K0.5Re4.5Ti4O15, and the Re is equal to the Dy, Ho, Er, Yb, Lu in the formula. The novel microwave dielectric ceramic provides a new material containing a rare earth microwave dielectric and expands selecting ranges of microwave dielectric application materials. A matched process is provided for the microwave dielectric ceramic, and the microwave dielectric ceramic with a good ceramic forming ratio is obtained.

The invention discloses a single-tuned filter and an optimal quality factor calculation method thereof. The single-tuned filter mainly comprises a capacitor C, an inductor L and a resistor R which are sequentially connected in series, wherein the other end of the capacitor C is connected with an alternating current voltage line; and the other end of the resistor R is grounded. The method comprises the following steps of: A, calculating the maximum equivalent frequency offset of a system; B, determining a maximum impedance angle of the system; and C, calculating an optimal quality factor of the filter. By the single-tuned filter and the method, the terminal voltage of the filter can be ensured to have a minimum value at characteristic frequency when the system has the maximum impedance angle, so filtering effects and system stability are ensured.

The invention relates to a preferred structure of a high quality factor thin film bulk acoustic resonator, comprising a substrate with a groove on the upper surface, a bottom electrode layer above the substrate, and a piezoelectric layer, and is characterized in that it also includes a The top electrode layer of the special-shaped air bridge structure, which is equipped with an acoustic rebound structure that can rebound the transverse sound wave; the acoustic rebound structure is a convex or opposite bridge cavity of the special-shaped air bridge structure. The trapezoidal polyhedron is arranged horizontally in the area above the bridge cavity of the special-shaped air bridge structure. The top surface of the acoustic rebound structure is embedded and closely attached to the groove on the top surface of the bridge cavity of the special-shaped air bridge structure. The acoustic rebound structure There is an air gap between the bottom end surface and the suspension structure in the area below the bridge cavity of the special-shaped air bridge structure. The left and right sides of the acoustic rebound structure are respectively embedded and adjacent to the bridge cavity support structure of the special-shaped air bridge structure. The grooves on the inner side fit snugly. The invention can significantly improve the quality factor of the film bulk acoustic wave resonator.

The invention discloses a method for manufacturing a stacked inductor and a device obtained therefrom, wherein the method comprises the steps of: coating a first photoresist, performing a photolithography process on the bottom of an enhanced gate and the bottom of a first metal layer of the inductor; coating a first photoresist Two photoresist, perform photolithography process on the top of the enhanced gate and the top of the first metal layer of the inductor; deposit metal to form the enhanced gate and the first metal layer of the inductor; passivate the enhanced gate and the first metal layer of the inductor process, forming a first passivation layer; etching the depletion gate and the first passivation layer of nitride connected to the second metal layer of the inductor; coating a third photoresist to perform depletion gate and photolithography process of the second metal layer of the inductor; depositing metal to form the depletion gate and the second metal layer of the inductor. The inductance of the spiral stack shape prepared by this scheme has a better quality factor under high frequency conditions and also has a larger inductance value. And the process is carried out simultaneously with the existing transistor process without increasing the process cost.

A thin film piezoelectric sonic sensor, comprising: a substrate layer (2), a ground electrode layer (3), and a piezoelectric layer (4) which are stacked. At least one transducer (5) is provided on the side of the piezoelectric layer (4) distant from the ground electrode layer (3); phononic crystals (1) at least formed in the piezoelectric layer (4) are correspondingly provided on the two sides of the transducer (5), and the resonant frequency of the thin film piezoelectric sonic sensor is located in a band gap of the phononic crystals (1). According to the thin film piezoelectric sonic sensor, the phononic crystals (1) are at least provided on the piezoelectric layer (4), the mechanical vibration stability of the piezoelectric layer (4) is improved, the sonic wave reflectivity is improved, the energy loss of sonic wave transmission is lowered, and the quality factor of the sensor is improved. A phononic crystal (1) comprises a matrix and a scatterer formed on the matrix; the matrix is formed by at least two stacked dielectric layers; materials of any one of the dielectric layers are different from those of other dielectric layers. The phononic crystal (1) can effectively reduce the sonic wave energy loss, and effectively improve the quality factor of the sensor when the phononic crystal is applied to the thin film piezoelectric sonic sensor.

The present invention provides a bulk acoustic wave resonator, a manufacturing method thereof, a filter, and a radio frequency communication system. The raised portion of the bottom electrode and the raised portion of the top electrode formed on the periphery of the piezoelectric resonant layer and suspended above the cavity can block The shear wave generated by the piezoelectric resonant layer is transmitted to the periphery of the cavity, and the shear wave is reflected back to the effective working area, thereby reducing and reducing the acoustic wave loss, improving the quality factor of the resonator, and finally improving the performance of the device. Furthermore, the overlapping parts of the bottom electrode lap and the top electrode lap and the cavity are all suspended, and the bottom electrode lap and the top electrode lap are staggered from each other, which can greatly reduce parasitic parameters and avoid leakage, Short circuit and other problems can improve device reliability.

The invention discloses microwave dielectric ceramics and a preparation process thereof, belonging to the technical field of microwave dielectric materials and manufacture thereof. The microwave dielectric ceramics comprises carbonate, oxide and Na, Gd, Dy, Er, Lu and Ti organic matters, and has a chemical formula of Na0.5Re4.5Ti4O15, wherein Re=Gd, Dy, Er and Lu. The invention provides a novel rare-earth-containing microwave dielectric material, and the selection range of a microwave dielectric application material is enlarged; and aiming at the microwave dielectric ceramics, the invention provides a novel matched process, namely, the microwave dielectric ceramics with better ceramic formation is obtained by combination of a process of preparing a powder material by adopting a sol-gel process and a process of preparing the ceramics by adopting a solid-phase reaction process.