The invention discloses a novel die bonding material and a packaging structure, and the die bonding material comprises a nano metal paste film and a heat dissipation layer, wherein the nano metal paste film uniformly covers at least one of the upper surface and the lower surface of the heat dissipation layer; the heat dissipation layer is of a multi-layer graphene structure, and the nano metal paste film comprises nano metal particles, an antioxidant, soldering flux, a stabilizer and an active agent; the content of the nano metal particles is 50.0 wt.%-95.0 wt.%, the content of the antioxidantis 5.0 wt.%-40.0 wt.%, and the total amount of the scaling powder, the stabilizer and the active agent is less than or equal to 5.0 wt.%. The material has the characteristics of high heat dissipationand uniform thickness; on the premise that the electrical performance of the semiconductor packaging interconnection module is not affected, die bonding and interconnection under the low-temperaturecondition are achieved, the semiconductor packaging interconnection module can be used under the conditions of small spacing, high power, high temperature, high pressure and the like, and the semiconductor packaging interconnection module can be widely applied to the fields of power electronics, IGBT packaging, photoelectron packaging, MEMS packaging, microelectronics, high-power LED packaging andthe like.