58results about How to "Difference in level" patented technology

The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film.The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1).The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.

Disclosed is a device and method for generating X-rays having different energy levels as well as a material discrimination system thereof. The method comprises the steps of: generating a first pulse voltage, a second pulse voltage, a third pulse voltage and a fourth pulse voltage, generating a first electron beam having a first beam load and a second electron beam having a second beam load, respectively, based on the first pulse voltage and second pulse voltage, generating a first microwave having a first power and a second microwave having a second power, respectively, based on the third pulse voltage and the fourth pulse voltage, accelerating the first and second electron beams respectively using the first and second microwave to obtain the accelerated first electron beam and the second electron beam, hitting a target with the accelerated first electron beam and the second electron beam to generate a first X-ray and a second X-ray having different energy levels. The X-rays having different energy levels generated by the present invention can be used in the non-destructive inspection for large-sized container cargo at places such as Customs, ports and airports, and in realizing the material discrimination for the inspected object.

In a processing method of a stacked-layer film in which a metal film is provided on an oxide insulating film, plasma containing an oxygen ion is generated by applying high-frequency power with power density greater than or equal to 0.59 W / cm2 and less than or equal to 1.18 W / cm2 to the stacked-layer film side under an atmosphere containing oxygen in which pressure is greater than or equal to 5 Pa and less than or equal to 15 Pa, the metal film is oxidized by the oxygen ion, and an oxide insulating film containing excess oxygen is formed by supplying oxygen to the oxide insulating film.

In a method of manufacturing an axis seal, first, a roll of rolled metal material is cut into metal material plates of a predetermined size. Next, metal material plates are etched from both sides so as to form a predetermined size. Subsequently, the thin metal plates are arranged so as to be in a ring shape, oriented in the same direction, and are welded so as to be fixed. Additionally, during these processes, heat treatment is performed by heating rolls of rolled metal materials or metal material plates or thin metal plates at a predetermined timing, thereby eliminating residual stress (strain).

The invention relates to a substrate for use in a liquid crystal display of a CF-on-TFT structure in which a color filter is formed on the side of an array substrate in which a switching element is formed, and has an object to provide a substrate for use in a liquid crystal display, which enables simplification of a manufacturing process typified by a photolithography process and has high reliability. The substrate for use in the liquid crystal display is constructed to include external connection terminals which include first terminal electrodes electrically connected to gate bus lines led out from a plurality of pixel regions arranged on a glass substrate in a matrix form, second terminal electrodes formed of forming material of a pixel electrode and directly on the glass substrate, and electrode coupling regions for electrically connecting the first and the second terminal electrodes, and which electrically connect an external circuit and the gate bus lines.

A semiconductor device includes an element isolation insulating film adjacent to an active area, a gate insulating film formed on a semiconductor substrate in the active area, paired gate electrodes located on the gate insulating film, a contact plug located on the active area between the gate electrodes, a pair of first upper lines located on the gate electrodes, a second upper line located on the gate electrodes, and a stopper film above upper surfaces of the gate electrodes and side surfaces of the gate electrodes. The element isolation insulating film has a first height of an upper surface thereof with reference to an upper surface of the semiconductor substrate and a second height of another upper surface thereof with reference to another upper surface of the semiconductor substrate. The first height is smaller than the second height.

In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an upper side portion of a semiconductor layer is rounded. Thereby, concentration of an electric field at the upper side portion of the semiconductor layer can be prevented. As a result, lowering of a threshold voltage of a parasitic transistor can be prevented, so that the parasitic transistor does not adversely affect subthreshold characteristics of a regular transistor. Owing to provision of a concavity of a U-shaped section, generation of etching residue can be prevented when etching a gate electrode for patterning the same. Thereby, a disadvantage is not caused in connection with the manufacturing process.

A method for forming a phosphor screen comprising the step of forming a phosphor layer containing a thermoplastic resin on the inner surface of a face plate, the step of pressurizing the phosphor layer being heated to plasticate the thermoplastic resin and smooth the surface of the phosphor layer, and the step of forming a metal film on the surface-smoothed phosphor layer and heating the face plate. Thermoplastic resin having a softening temperature of 50-350° C. can be used in the phosphor layer, and 0.05-50 wt % of such a thermoplastic resin in solid content ratio is contained in the layer. Heating / pressurizing conditions preferably involve temperatures of 50-350° C. and pressures of 10-10000 N / cm<2>. This method enhances the film forming property of a metal back layer and prevents cracks and pinholes in the metal back layer.

A medium storing and advancing apparatus is provided which prevents, when a medium sandwiched between two tapes is wound on a drum to be stored, that the medium could not be wound due to the thickness of the tapes wound previously on the drum. The medium storing and advancing apparatus includes reels which supply and wind up the tapes, and a drum which winds up the tapes, wherein the drum is provided with a drum groove portion over the circumferentially entire periphery substantially in a middle way of the outer peripheral surface of the drum so that the tapes are wound in the drum groove portion.

In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

A slider for a linear motion rolling guide unit can ensure a smooth rolling movement and a reliable lubricating capability and eliminate the need for accurate dimension control to reduce the manufacturing costs. A lubricating member A has a lubricating face 20 exposed on an outer peripheral face of a turning corner 10 in an end cap 2. The rolling elements 11 are lubricated by making contact with the lubricating face 20 while rolling through the turning corner. The lubricating face 20, exposed on the arced face 10b of the turning corner, and the outer peripheral face of the turning corner maintain the relation of crossing each other at two intersections. The lubricating face 20 is longer than the distance between the two intersections. Recessed areas 21 are formed between the outer peripheral face of the turning corner 10 and the lubricating face 20 in the surplus length regions.

A thin keyboard having multiple keys is disclosed. At least one of the keys includes a key magnet, and a holding magnet is mounted on a transverse slider. The key is located in a ready position by a magnetic attraction of the holding magnet to the key magnet. When the transverse slider is slid, a separating protrusion pushes a chamfer to widen the distance between the holding magnet and the key magnet. The distance between both magnets is also widened in a right and left direction, and when the magnetic attraction drops, the key is located by gravity in a release position.

Provided is a method of manufacturing a semiconductor device capable of adhering semiconductor elements and a support member for mounting semiconductor elements, such as lead frames, organic substrates or the like, even in a relatively low temperature range without damaging adhesion property and workability and of suppressing the occurrence of voids. The method of manufacturing a semiconductor device according to the invention is a method of manufacturing a semiconductor device comprising a semiconductor element and a support member adhered to the semiconductor element through a cured material of an adhesive film, wherein the method comprises the steps (a) to (d) in this order;(a) preparing adhesive film-attached semiconductor elements;(b) thermocompression-bonding said adhesive film-attached semiconductor elements to said support member so as to obtain a semiconductor part made of said adhesive film-attached semiconductor elements and said support member;(c) heating and pressurizing said semiconductor part made of said adhesive film-attached semiconductor elements and said support member using a pressurized fluid so as to proceed with curing of adhesive film; and(d) electrically connecting said adhesive film-attached semiconductor elements and said support member.

A slider for a linear motion rolling guide unit can ensure a smooth rolling movement and a reliable lubricating capability and eliminate the need for accurate dimension control to reduce the manufacturing costs. A lubricating member A has a lubricating face 20 exposed on an outer peripheral face of a turning corner 10 in an end cap 2. The rolling elements 11 are lubricated by making contact with the lubricating face 20 while rolling through the turning corner. The lubricating face 20, exposed on the arced face 10b of the turning corner, and the outer peripheral face of the turning corner maintain the relation of crossing each other at two intersections. The lubricating face 20 is longer than the distance between the two intersections. Recessed areas 21 are formed between the outer peripheral face of the turning corner 10 and the lubricating face 20 in the surplus length regions.