49results about How to "Consistent growth rate" patented technology

The invention discloses a sedum lineare roof greening planting method. The sedum lineare roof greening planting method comprises the following steps: (1) preparing a medium; (2) paving a non-woven fabric on a land, paving soil on the non-woven fabric, applying fertilizers, then scattering the medium, arranging into rectangular pieces, arranging square wood plate frames, and establishing small square cases with the same size in the middle of the square wood plate frames by using net wires; (3) shearing sedum lineare stem seedlings into stems with knots, inserting the stems with knobs in the small square cases, scattering the medium on the stems with knots, enabling the stems with knots to be in a semi-buried and semi-exposed state in the small square cases, moving away the square wood plate frames and the net wires, and cutting a sod into square blocks with the area of 1.0 x 1.2 m<2> after the sod grows; and (4) coating a waterproof coating on a roof, paving geotextiles, flatly paving a mixture of the medium and soil, and paving the sod on the mixture of the medium and the soil, and scattering the medium on the sod in time while paving the sod so as to finish planting of sedum lineare. The invention further discloses a roof greening planting structure which implements the method.

The invention discloses a planting bed composite structure for high-density indoor planting. The planting bed composite structure for high-density indoor planting comprises a planting slot body and a planting floating plate, wherein the sinuous S-shaped structure of a diversion trench is utilized and connected with a filling hole and an overflow hole, simultaneously planting holes are sequentially arranged along the extending direction of the diversion trench, the height of the filling hole relating to the bottom of the diversion trench is more than the height of the overflow hole relating to the bottom of the diversion trench, nutrient solution flows along the direction of the diversion trench, when the nutrient solution is continuously filled for a period of time, the nutrient solution can be uniformly distributed below each planting hole, each plant can absorb the nutrient solution and liquid uniformly and sufficiently, so that the plants can be ensured to have accordant growth speed and size, and thus a stable control mode is provided for indoor planting. In each growth period of each plant, the required nutrients are relatively different; according to the design, residual nutrients can be reduced and needless matters are filtered in continuous water circulation mode before the nutrient conversion of each period or before the harvest of edible plants.

The invention discloses a preparation method of a single-layer micro-arc oxidation ceramic film on the surface of an aluminum alloy, and belongs to the technical field of aluminum alloy surface treatment. The method comprises the following steps: placing an aluminum alloy workpiece in an electrolyte, and allowing the surface of the aluminum alloy workpiece in the electrolyte and a stainless steel conductor to form an electrolysis loop respectively as a work electrode and a counter electrode; and applying a double-pulse square wave voltage with a high-frequency carrier wave to the electrolysis loop under a controlled current density of 0.2-20A / dm<2> at an electrolyte temperature of 50DEG C or less for 30-200min to form the micro-arc oxidation ceramic film on the surface of the aluminum alloy. The single-layer micro-arc oxidation ceramic film prepared in the invention can effectively solve a technical problem brought by the loose layer of routine two-layer films, and also effectively improves the performances of a micro-arc oxidation ceramic film.

The invention discloses a preparation method for a silicon nitride film, a solar cell with the silicon nitride film and a preparation method for the solar cell. The preparation method for the silicon nitride film includes following steps: S1, placing a silicon wafer into a tubular furnace; S2, feeding nitrogen into the tubular furnace, heating the tubular furnace under the atmosphere of nitrogen to 340 DEG C to 360 DEG C, and maintaining the temperature for 500 seconds to 2000 seconds; and S3, utilizing the PECVD (plasma enhanced chemical vapor deposition) method to sequentially form a first silicon nitride film layer and a second silicon nitride film layer on the silicon wafer. The first silicon nitride film layer is arranged on the silicon wafer before the temperature of the tubular furnace is maintained, so that temperatures around and in the middle of the silicon wafer are uniform after the step of temperature maintaining of the silicon wafer, growth rate of the silicon nitride film around and in the middle of the silicon wafer is guaranteed, overhigh growth rate caused by higher temperature at the edge of the silicon wafer is improved, the problem of color deviation caused by different thicknesses and refractive indexes of the silicon nitride film at various positions on the surface of the silicon wafer is solved, grade of the silicon wafer is lowered, and acceptance rate of the silicon wafer is improved.

The invention discloses an epitaxial structure of a power semiconductor device and a preparation method thereof, belonging to the technical field of semiconductors. The epitaxial structure of the power semiconductor device includes a Si substrate, an AlN buffer layer, and a GaN epitaxial layer stacked in sequence, and the floating bonds on the first surface of the AlN buffer layer include one of Al bonds, Ga bonds, and N bonds or Multiple, the first surface is the surface on which the GaN epitaxial layer is provided for the AlN buffer layer. The present invention sets the suspended bonds on the surface of the GaN epitaxial layer by changing the AlN buffer layer, which can effectively avoid the -OH bond and -O bond from affecting the growth of the GaN crystal, so that the growth rate of the GaN crystal on each region of the AlN buffer layer is basically the same, Reduce the formation of defects, improve the crystal quality of GaN epitaxial layer, realize high-quality GaN layer, and ensure the performance of power semiconductor devices.