Monitoring method and monitoring equipment for monocrystal diamond growth process

Abstract

The invention provides a monitoring method and monitoring equipment for a monocrystal diamond growth process. The monitoring method comprises the following steps: 1, before the growth of the monocrystal diamond: moving thickness monitoring equipment to measure the optical thickness on the surface of a monocrystal diamond seed crystal to obtain initial thickness and position data corresponding to each detection position on the surface of the monocrystal diamond; and 2, in the growth process of the monocrystal diamond: moving the thickness monitoring equipment to perform optical thickness measurement on the surface of the monocrystal diamond to obtain thickness and position data corresponding to each detection position on the surface of the monocrystal diamond in the growth process. The monitoring equipment comprises the thickness monitoring equipment. The thickness monitoring equipment comprises a thickness monitoring part and an objective lens; the thickness monitoring part is connected with the objective lens and a mobile platform and used for obtaining thickness and position data corresponding to each detection position on the surface of the monocrystal diamond. According to themonitoring method and equipment, the thickness of the monocrystal diamond can be monitored in real time, and whether production needs to be stopped or not can be determined once obvious changes can beobserved locally in the height direction.

Description

technical field [0001] The invention relates to the technical field of single crystal diamond, in particular to a monitoring method and monitoring equipment for the growth process of single crystal diamond. Background technique [0002] When using microwave plasma chemical vapor deposition equipment, that is, MPCVD (Microwave Plasma Chemical Vapor Deposition) to grow carat-level single crystal diamond, after the seed crystal is placed in the CVD equipment, it needs to grow for a long time of about 10-15 days. , Seed crystal quality, external environmental factors and other conditions, it is very easy to have polycrystalline growth, black carbon inclusions, and internal stress problems at a certain point in time, which in turn affects product yield and increases costs. However, diamond is at a high temperature of about 1000°C, and the existing observation methods (mainly naked eye observation) cannot observe whether there are polycrystalline growths. That is to say, once the ...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a monitoring method and monitoring equipment for the growth process of single crystal diamond, so as to solve the problem that in the prior art, it is impossible to observe in real time whether polycrystals or inclusions are generated, and it is impossible to monitor the growth of single crystal diamond, thereby The problem of cost waste due to process or other factors

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