Epitaxial structure of power semiconductor device and its preparation method
A power semiconductor and epitaxial structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as inconsistent growth rates, affecting GaN crystal growth, and reducing the crystal quality of GaN layers, so as to reduce the formation of defects , improve the crystal quality and ensure the effect of performance
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0035] An embodiment of the present invention provides an epitaxial structure of a power semiconductor device. figure 1 A schematic structural diagram of an epitaxial structure of a power semiconductor device provided by an embodiment of the present invention. see figure 1 , the epitaxial structure of the power semiconductor device includes a Si substrate 10, an AlN buffer layer 20 and a GaN epitaxial layer 30 stacked in sequence, and the floating bonds on the first surface of the AlN buffer layer 20 include Al bonds, Ga bonds and N bonds. One or more, the first surface is the surface of the GaN epitaxial layer 30 disposed on the AlN buffer layer 20 .
[0036] In the embodiment of the present invention, by changing the AlN buffer lay...
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