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Temperature control device and method for MPCVD equipment

A temperature control device and equipment technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the temperature difference of diamond substrate, uneven distribution of plasma, uncontrollable temperature change of substrate table, etc. question

Inactive Publication Date: 2019-02-26
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the diamond deposition process when the diamond film is prepared by MPCVD equipment, the plasma distribution is inhomogeneous (see Image 6 ), resulting in large differences in the temperature of the diamond substrate in different regions of the substrate table
[0003] The invention patent of the prior art 201610256111.8 "method for preparing diamond film by MPCVD intermediate frequency induction auxiliary heating", configures a heater through the substrate stage, and controls the temperature of the substrate through heating; it controls the temperature of the entire substrate stage and cannot control the substrate The temperature change in a certain area of ​​the table is only suitable for the preparation of diamond films

Method used

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  • Temperature control device and method for MPCVD equipment
  • Temperature control device and method for MPCVD equipment
  • Temperature control device and method for MPCVD equipment

Examples

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example 1

[0031] Refer to attached Figure 1-Figure 5 , the temperature control device of the present invention comprises four substrate stages, each substrate stage is a 1 / 4 cylinder, assembled to form a cylinder, the distance between adjacent substrate stages is 1 mm, and each substrate stage is configured A separate cooling channel (including water inlet and outlet), the cooling channel is a conventional cooling channel, which can uniformly cool the surface of the substrate table; the cooling channel can control the flow rate of the cooling medium to 0L / min -10L / min, to control the cooling rate of the substrate table. Each cooling medium is connected with a separate flow valve, and the size of the cooling medium water inlet can be controlled by adjusting the flow valve, thereby controlling the flow of the cooling medium.

[0032] It also includes a gas source, the gas (usually air) in the gas source is passed into the cooling flow channel, and the cooling flow channel can control th...

example 2

[0036] The temperature control device of the present invention includes four substrate stages, each substrate stage is a 1 / 4 cylinder, assembled to form a cylinder, the distance between adjacent substrate stages is 1mm, and each substrate stage is configured A separate cooling flow channel, the cooling flow channel can control the cooling rate of the substrate table by controlling the flow rate of the cooling medium.

[0037] It also includes a gas source, the gas (air) in the gas source passes into the cooling channel, and the cooling channel can control the cooling rate of the substrate table by controlling the flow of gas mixed into the cooling medium.

[0038] The upper surfaces of each substrate stage are flush, and molybdenum sheets with openings are placed. The size and position of the openings correspond to the diamond seeds placed on the substrate stage during the deposition process. The gaps between the plurality of substrate stages Covered by molybdenum sheet.

[0...

example 3

[0041] The temperature control device of the present invention includes four substrate stages, each substrate stage is a 1 / 4 cylinder, assembled to form a cylinder, the distance between adjacent substrate stages is 1mm, and each substrate stage is configured A separate cooling flow channel, the cooling flow channel can control the cooling rate of the substrate table by controlling the flow rate of the cooling medium.

[0042] It also includes a gas source, the gas (air) in the gas source passes into the cooling channel, and the cooling channel can control the cooling rate of the substrate table by controlling the flow of gas mixed into the cooling medium.

[0043] The upper surfaces of each substrate stage are flush, and molybdenum sheets with openings are placed. The size and position of the openings correspond to the diamond seeds placed on the substrate stage during the deposition process. The gaps between the plurality of substrate stages Covered by molybdenum sheet.

[0...

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PUM

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Abstract

The invention discloses a temperature control device for MPCVD equipment, the temperature control device comprises a plurality of substrate stages, the distance between adjacent substrate stages is 1mm to 10 mm, and each substrate stage is provided with a separate cooling water path, and the cooling water path is designed as a conventional cooling waterway, and can control the cooling speed of the substrate stages by controlling the flow speed and flow rate of cooling water. By controlling the temperature of the substrate stages, the temperature of a substrate during the diamond growth process is controlled, and the temperature of a base plate is controlled during the diamond deposition process. During the diamond growth process, the surface temperatures of diamonds are controlled by controlling of heat dissipation, so that the surface temperatures of the diamonds in the deposition process are close, the growth speed and quality of the diamonds produced in the same batch are consistent, and mass production is facilitated.

Description

technical field [0001] The invention relates to the field of MPCVD (microwave plasma chemical vapor deposition) equipment, in particular to an MPCVD equipment temperature control device and method. Background technique [0002] MPCVD equipment is a common vapor deposition equipment, especially suitable for diamond production, and deposits diamond on the substrate surface on the substrate table through plasma. In order to achieve mass production, substrates (such as diamond single wafers) are placed in an array on the substrate stage. In order to achieve uniform deposition of diamond on the surface of each substrate, it is required that the temperature of the upper surface of each substrate during the entire growth process be kept as consistent as possible. However, during the diamond deposition process when the diamond film is prepared by MPCVD equipment, the plasma distribution is inhomogeneous (see Figure 6 ), resulting in large differences in the temperature of the diamo...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/52C23C16/517C23C16/27
CPCC23C16/274C23C16/276C23C16/463C23C16/517C23C16/52
Inventor 黄翀彭琎
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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