34 results about "Quantum tunnelling" patented technology

The invention discloses a light-emitting diode epitaxial wafer with high luminous efficiency and a preparation method thereof, belonging to the field of light-emitting diodes. The high-luminous-efficiency light-emitting diode epitaxial wafer includes: a substrate, and a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN layer, and a P-type GaN carrier layer covering the substrate in sequence , the multi-quantum well active layer includes a plurality of InGaN well layers and a plurality of GaN barrier layers grown alternately; the P-type AlGaN layer includes the first P-type AlGaN sublayer, u-type GaN sublayer and the second P-type AlGaN sublayer. It can not only reduce the potential energy required for holes in the P-type GaN carrier layer to cross the P-type AlGaN layer, but also form a quantum state in the u-type GaN sublayer. The potential energy in the P-type GaN carrier layer is lower than that of crossing the P-type The holes with the potential energy required by the AlGaN layer will tunnel into the u-type GaN sub-layer through the quantum tunneling effect, and then be transported into the quantum wells, increasing the hole concentration injected into the multi-quantum well active layer.

The invention provides a method for generating a true random number sequence based on the quantum tunneling effect. The quantum tunneling source is used to generate an original random sequence. After the tunneling probability of the quantum tunneling source is stable, the Topliz-Hash The Toeplitz-hashing method denoises the original random sequence generated after the tunneling probability is stabilized to obtain the final true random number sequence. The elements of the random number sequence generated by the invention are independent of each other, which means that the random number sequence has good randomness; meanwhile, the system for realizing the method is simple and the cost is low.

The invention provides a high-modulation-speed light emitting diode, a modulation method thereof and a manufacturing method thereof. The PN junction region of the light emitting diode comprise a double-quantum-well structure. The double-quantum-well structure comprises a first quantum well and a second quantum well. The band gap of the first quantum well is larger than that of the second quantum well. The first quantum well radiates signal light, and the second quantum well radiates auxiliary light. Through a quantum tunneling effect, the first quantum well is coupled with the second quantum well. Through a dynamic process of carries in an energy space, the high-modulation-speed light emitting diode performs functions of realizing ultra-quick injection and ultra-quick extraction of the carriers from an energy area which is radiated by the signal light, reducing time required in rising edge and falling edge of the optical signal of the light emitting diode, and furthermore improving modulation speed of the light emitting diode.

The present invention relates to a miniature electron-position collision system and a method for magnetizing an electromagnetic product by using the same. The present invention comprises two piezoelectric devices, and a metal carrier, a wire and an electromagnetic product that are fixed on an electronic display. According to the present invention, a quantum tunneling effect and a piezoelectric principle are used as base, electron-position collision of the metal carrier is performed by pressing the two piezoelectric devices, so that magnetization of an electromagnetic apparatus is reinforced, and related electromagnetic performance of the electromagnetic apparatus is improved. The storage capacity of an accumulator can be improved by about 30%, and the purpose of prolonging the service life of the accumulator in field work is achieved.

The invention relates to a preparation method of a P-type dye-sensitized battery, belonging to the fields of material preparation and solar cells. That is to use a femtosecond laser to form a fine and dense micro-nano structure on a nickel sheet, and then oxidize at a high temperature in the air to form a dense NiO layer on the nickel sheet; combined with an ultra-thin dense aluminum oxide (Al2O3) passivation layer to prepare a p-type Dye-sensitized battery; due to the micro-nano structure on the surface of the nickel sheet, the specific surface area is large, resulting in an increase in the amount of dye adsorption. In addition, because the NiO layer is directly oxidized on the nickel sheet, the two are in close contact, and the NiO layer will not When a fracture occurs, the carrier transport characteristics to the electrode are also good. And when the ultra-thin (less than 1nm) Al2O3 passivation layer reduces the charge recombination on the NiO surface, since there are only a few atomic layers, the quantum tunneling effect is obvious, so that it has little effect on electrical transmission.

The invention discloses a high-voltage-resisting GaN-based JBS diode based on a gradient drift region and a production method of the high-voltage-resisting GaN-based JBS diode, and solves the problemthat expected breakdown voltage cannot be reached in the prior art. The high-voltage-resisting GaN-based JBS diode comprises a cathode (1), an n type GaN substrate (2), an n type GaN drift layer (3),an n type AlxGaN structural layer (4), a p type AlyGaN structural layer (5), a plurality of p type GaN structural layers (6) and an anode (7), wherein Al component x of the AlxGaN structural layer isgradually changed from 0 to 0.1, and the doping concentration is 2 to 10x1016cm<-3>; Al component y of the p type AlyGaN structural layer is gradually changed from 0.1 to 0, and the doping concentration is 2x1016cm<-3> to 2x1018cm<-3>. The high-voltage-resisting GaN-based JBS diode disclosed by the invention has the advantages that a quantum tunneling effect is reduced and the breakdown voltage ofa device is improved; in addition, process repeatability and controllability for producing the device are high; the high-voltage-resisting GaN-based JBS diode can be used for a power device.

The invention belongs to the technical field of quantum-effect devices, in particular relates to a quantum-effect device based on an MIS (Metal-Insulator-Semiconductor) structure. The quantum-effect device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer and a metal layer, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; and the metal layer, the tunneling insulator layer and the semiconductor layer form an MIS structure. The quantum-effect device further comprises a grid electrode and a grating type insulator layer, wherein the grid electrode is arranged at one side of the MIS structure, and the grating type insulator layer is arranged between the MIS structure and the grid electrode. According to the quantum-effect device based on the MIS structure, a quantum tunneling effect and a gated diode are integrated together, and a gated metal insulator semiconductor diode based on the quantum tunneling effect is manufactured by using a platform process. A suitable bias voltage is applied to the quantum-effect device so that the tunnelingefficiency of the quantum-effect device can be controlled, a drain current can be reduced to be much smaller than the drain current of a normal diode, and the power dissipation of a chip is reduced.

The invention discloses a graphene strip heterojunction double-gate TFET and a method for improving switching characteristics thereof. How to improve the on-state current of TFET is an important direction of TFET research. The source region, the drain region and the channel between the source region and the drain region of the present invention form a graphene strip heterojunction; the channel is composed of a first channel section and a second channel section arranged along the direction from the source region to the drain region ; The source region, the second section of the channel and the drain area are all armchair graphene nano-strips; the extending direction of the strips of the first channel and the extending direction of the armchair graphene nano-strips form an included angle. In the off state of the present invention, a section of the channel is a bandgap armchair graphene nano-strip along the length direction of the device, and the regional density of states is 0, which plays a role in suppressing the off-state current; in the on state, there is Current, one section of the channel is a zigzag graphene strip along the direction of current transmission, and there is no band gap in one section of the channel, which promotes the quantum tunneling effect of electrons between the source region and the channel, and increases the on-state current.

The invention discloses a liquid silicon rubber / organic montmorillonite nano composite material and its preparing process by employing in-situ aggregation intercalation technology, after the montmorillonite's intercalation, it can be dispersed into polymeric matrix by the form of nano sheets, which will show a small dimensional effect, boundary effect and quantum tunnelling effect. The contact plane and activity can be increased substantially.