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High-voltage gan-based JBS diode based on gradient drift region and manufacturing method thereof

A diode and high-voltage-resistant technology, which is applied in the field of power devices, GaN-based diode device structure and production, can solve the problems of high breakdown voltage, small turn-on voltage, short reverse recovery time, etc., and reduce the quantum tunneling effect , improve the breakdown voltage, high repeatability effect

Active Publication Date: 2020-08-04
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The SBD Schottky diode has only one kind of carrier involved in conduction, the reverse recovery time is short, its on-resistance is small, the turn-on voltage is small, but the leakage current is large, and the breakdown voltage is small
[0006] The GaN-based JBS diode combines the advantages of these two diodes, and the cross-sectional structure is as follows: image 3 As shown, although the diode has faster reverse recovery speed and smaller reverse leakage while being able to withstand higher reverse voltage, it cannot fully exert its advantages and cannot reach the expected high breakdown voltage.

Method used

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  • High-voltage gan-based JBS diode based on gradient drift region and manufacturing method thereof
  • High-voltage gan-based JBS diode based on gradient drift region and manufacturing method thereof
  • High-voltage gan-based JBS diode based on gradient drift region and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Example 1, making p-type graded Al composition Al y GaN structure layer and n-type graded Al composition Al x GaN structure layers, GaN-based JBS diodes with a thickness of 0.1 μm.

[0047] Step 1: Doping the GaN substrate material, such as Figure 5 (a) shown.

[0048] Do Si element doping on the GaN substrate material with a thickness of 200 μm, and set SiH 4 The flow rate is 5000sccm, and the doping concentration is 1×10 18 cm -3 n-type GaN substrate.

[0049] Step 2: Grow GaN drift layer, such as Figure 5 (b) shown.

[0050] GaN drift layer is epitaxially grown on the surface of n-type GaN substrate using MOCVD equipment, and the doping source is SiH 4 , set SiH 4 The flow rate is 50sccm, the time is 210min, the thickness is 3μm, and the doping concentration is 2×10 16 cm -3 Si-doped n-type GaN drift layer.

[0051] Step 3: Growing n-type Al x GaN structure layers, such as Figure 5 (c) shown.

[0052] Epitaxial growth of Al on n-type GaN drift layer...

Embodiment 2

[0063] Example 2, making p-type graded Al composition Al y GaN structure layer and n-type graded Al composition Al x GaN structure layers, GaN-based JBS diodes with a thickness of 0.3 μm.

[0064] Step 1: Doping the GaN substrate material with a thickness of 300 μm with Si element to obtain a doping concentration of 1×10 18 cm -3 n-type GaN substrate, the flow of doping is the same as step 1 of embodiment 1, such as Figure 5 (a) shown.

[0065] Step 2: growing a GaN drift layer, such as Figure 5 (b) shown.

[0066] GaN drift layer is epitaxially grown on the surface of n-type GaN substrate using MOCVD equipment, and the doping source is SiH 4 , set SiH 4 The flow rate is 150sccm, the time is 420min, the thickness is 6μm, and the doping concentration is 6×10 16 cm -3 Si-doped n-type GaN drift layer.

[0067] Step 3: Growing n-type Al x GaN structure layers, such as Figure 5 (c) shown.

[0068] Epitaxial growth of Al on n-type GaN drift layer using MOCVD equipmen...

Embodiment 3

[0079] Example 3, making p-type graded Al composition Al y GaN structure layer and n-type graded Al composition Al x GaN structure layers, GaN-based JBS diodes with a thickness of 0.5 μm.

[0080] Step A: doping the GaN substrate material with a thickness of 400 μm with Si element, setting SiH 4 The flow rate is 5000sccm, and the doping concentration is 1×10 18 cm -3 n-type GaN substrates, such as Figure 5 (a) shown.

[0081] Step B: Setting up SiH 4 The flow rate is 250sccm, the time is 560min, and the epitaxial growth thickness is 8μm on the surface of the n-type GaN substrate using MOCVD equipment, and the doping concentration is 10×10 16 cm -3 Si-doped n-type GaN drift layer, such as Figure 5 (b) shown.

[0082] Step C: Setting up SiH 4 The flow rate is 5000sccm, the time is 35min, and Al is epitaxially grown on the n-type GaN drift layer using MOCVD equipment x The GaN structure layer is obtained with a thickness of 0.5 μm and a doping concentration of 2×10 ...

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Abstract

The invention discloses a high-voltage-resisting GaN-based JBS diode based on a gradient drift region and a production method of the high-voltage-resisting GaN-based JBS diode, and solves the problemthat expected breakdown voltage cannot be reached in the prior art. The high-voltage-resisting GaN-based JBS diode comprises a cathode (1), an n type GaN substrate (2), an n type GaN drift layer (3),an n type AlxGaN structural layer (4), a p type AlyGaN structural layer (5), a plurality of p type GaN structural layers (6) and an anode (7), wherein Al component x of the AlxGaN structural layer isgradually changed from 0 to 0.1, and the doping concentration is 2 to 10x1016cm<-3>; Al component y of the p type AlyGaN structural layer is gradually changed from 0.1 to 0, and the doping concentration is 2x1016cm<-3> to 2x1018cm<-3>. The high-voltage-resisting GaN-based JBS diode disclosed by the invention has the advantages that a quantum tunneling effect is reduced and the breakdown voltage ofa device is improved; in addition, process repeatability and controllability for producing the device are high; the high-voltage-resisting GaN-based JBS diode can be used for a power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a GaN-based diode device structure and manufacturing method, which can be used for power devices. Background technique [0002] Power electronics are used in a wide variety of applications and play a key role in the areas of power rectification and power switching. GaN-based power devices have attracted wide attention due to their advantages of fast switching speed, high operating temperature, large breakdown voltage, and small on-state resistance. GaN's own special material properties, such as large band gap, high breakdown field strength, high saturation velocity, and high electron gas density, contribute to the superior performance of GaN-based power devices. Today, despite the breakthroughs in GaN-based high electron mobility transistors, there remains a need in the art for improved electronic systems and methods of operating the same. [0003] Compared with planar GaN...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/329H01L29/20
CPCH01L29/2003H01L29/66143H01L29/872
Inventor 张进成宋豫秦郝跃党魁张涛边照科
Owner XIDIAN UNIV
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