62 results about "P i n diode" patented technology

A method is disclosed to form an upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array.

A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-type doped regions in the silicon p-i-n without requiring direct physical contact to germanium material. The current invention may be optically coupled to on-chip and/or off-chip optical waveguide through end-fire or evanescent coupling. In some cases, the doping of the germanium p-type doped and/or n-type doped region may be accomplished based on out-diffusion of dopants in the doped silicon material of the underlying parasitic silicon p-i-n during high temperature steps in the fabrication process such as, the germanium deposition step(s), cyclic annealing, contact annealing and/or dopant activation.

An arrangement of pillar shaped p-i-n diodes having a high aspect ration are formed on a semiconductor substrate. Each device is formed by an intrinsic or lightly doped region (i-region) positioned between a P+ region and an N+ region at each end of the pillar. The arrangement of p-i-n diodes is embedded in an optical transparent medium. For a given surface area, more light energy is absorbed by the pillar arrangement of p-i-n diodes than by conventional planar p-i-n diodes. The p-i-n diodes are configured in an array formation to enable photons reflected from one p-i-n diode to be captured and absorbed by another p-i-n diode adjacent to the first one, thereby optimizing the efficiency of the energy conversion.

The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.

A device and associated method are provided for fabricating a liquid phase epitaxial (LPE) Germanium-on-Insulator (GOI) photodiode with buried high resistivity Germanium (Ge) layer. The method provides a silicon (Si) substrate, and forms a bottom insulator overlying the Si substrate with a Si seed access area. Then, a Ge P-I-N diode is formed with an n +-doped (n+) mesa, a p+-doped (p+) Ge bottom insulator interface and mesa lateral interface, and a high resistivity Ge layer interposed between the p+ Ge and n+ Ge. A metal electrode is formed overlying a region of the p+ Ge lateral interface, and a transparent electrode is formed overlying the n+ Ge mesa. In one aspect, the method deposits a silicon nitride layer temporary cap overlying the high resistivity Ge layer, and an annealing is performed to epitaxially crystallize the Ge bottom interface and high resistivity Ge layer.

An upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium is disclosed. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array.

A structure and method of fabrication for a Si based material p-i-n photodetector is disclosed. The light is absorbed in an undoped layer containing SiGe or Ge in such a manner that the absorption length is not limited by a critical thickness of the SiGe or Ge layer. The result is achieved by growing the SiGe or Ge layer from the walls of a trench in monocrystalline Si using lateral epitaxial. A second, doped material is disposed over the undoped layer for biasing and photocarrier collection in the p-i-n diode.

An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.

In a first aspect, a method for forming a non-volatile memory cell is provided. The method includes (1) forming a metal-insulator-metal (MIM) antifuse stack including (a) a first metal layer; (b) a silicon dioxide, oxynitride or silicon nitride antifuse layer formed above the first metal layer; and (c) a second metal layer formed above the antifuse layer. The method also includes (2) forming a contiguous p-i-n diode above the MIM stack, the contiguous p-i-n diode comprising deposited semiconductor material; (3) forming a layer of a silicide, silicide-germanide, or germanide in contact with the deposited semiconductor material; and (4) crystallizing the deposited semiconductor material in contact with the layer of silicide, silicide-germanide, or germanide. The memory cell comprises the contiguous p-i-n diode and the MIM stack. Other aspects are provided.

The invention provides a silicon-based germanium laser device and a method for manufacturing the same. The silicon-based germanium laser device comprises a silicon material, a germanium layer, a p-type doped region, an n-type doped region, an insulating dielectric layer, a p electrode and an n electrode; the silicon material is provide with corresponding crystal orientation; the germanium layer epitaxially grows on the silicon material and comprises a germanium ridge waveguide, the germanium layer is etched to form the germanium ridge waveguide, and the germanium ridge waveguide forms all or partial laser resonant cavities; the p-type doped region and the n-type doped region are positioned on two sides of the germanium ridge waveguide; the p-type doped region, the germanium ridge waveguide and the n-type doped region form a transverse p-i-n diode structure; the insulating dielectric layer is formed above the germanium ridge waveguide, the p-type doped region, the n-type doped region; the p electrode and the n electrode are formed above the insulating dielectric layer and are respectively electrically connected with the p-type doped region and the n-type doped region. The silicon-based germanium laser device and the method have the advantages that the silicon-based germanium laser device is of a horizontal transverse p-i-n germanium ridge waveguide structure, a silicon substrate does not need to be doped, the crystal quality of the germanium layer which epitaxially grows on the silicon substrate can be high, and accordingly the integral performance of the silicon-base germanium laser device can be improved advantageously.

A bandgap reference circuit and method of using the same are provided. The bandgap reference circuit may provide start-up requirements at substantially any voltage and at substantially any temperature. The circuit comprises an op amp (two stages of transistors) and a network of resistors and bipolar diodes. When an artificial offset of about −5 mV is introduced to the op amp, the op amp output will be high as soon as the power supply exceeds the transistors' threshold voltages. The op amp output supplies the resistor and diode network and brings the op amp inputs within desired regulation voltages.

The invention provides a common-caliber frequency reconfigurable on-chip slit array antenna and a use method. The antenna comprises a silicon-based reconfigurable radiator layer, a PCB feeder line layer, a jumper line connection structure of a PCB and a silicon-base radiator, and a metal reflection cavity. The silicon-based reconfigurable radiator layer comprises a metal layer, multiple surface P-I-N diode (S-PIN) units, an insulation isolation layer, an S-PIN direct current bias layer and an intrinsic silicon medium layer, wherein slits are etched in the metal layers and the surface P-I-N diode (S-PIN) units are connected into the slits of the metal layer in a crossing manner. The PCB feeder line layer comprises a direct current lead connected with the silicon-based reconfigurable radiator layer, a microwave feeding device and a structure aligned to the silicon-based reconfigurable radiator layer. The reflection face layer is achieved by use of a metal box body. According to the invention, by controlling on and off of the S-PIN units connected into the metal slits of the silicon-based reconfigurable radiator layer in a crossing manner, working frequency and unit intervals of the array antenna are controlled, and frequency reconfiguration of the slit array antenna is finally achieved. Meanwhile, by use of the novel silicon-based S-PIN bias technology, radiation characteristicsof reconfigurable antenna are improved.

An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.