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114 results about "ISFET" patented technology

An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H⁺, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal-oxide-semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. Invented in 1970, the ISFET was the first biosensor FET (BioFET).

Methods and apparatus for measuring analytes using large scale fet arrays

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and / or concentration changes of various analyte types in a wide variety of chemical and / or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates.
Owner:LIFE TECH CORP

Methods and Apparatus for Detecting Molecular Interactions Using FET Arrays

ActiveUS20120088682A1Facilitate rapid acquisition of dataImprove signal-to-noise ratioTransistorWeather/light/corrosion resistanceCMOSAnalyte
Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and / or concentration changes of various analyte types in a wide variety of chemical and / or biological processes.
Owner:LIFE TECH CORP

Methods and apparatus for detecting molecular interactions using fet arrays

Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and / or concentration changes of various analyte types in a wide variety of chemical and / or biological processes.
Owner:LIFE TECH CORP

Multi-parameter low-power-consumption current-mode ion sensitive field effect tube array sensor device

The invention discloses a multi-parameter low-power-consumption current-mode ion sensitive field effect tube array sensor device which comprises an n*n ISFET (ion sensitive field effect tube) sensor array, a matrix selection switch for selecting ISFETs, an address decoder, a reference transistor (REFET) for temperature and common-mode drift compensation, a normal-phase current transmitter, an anti-phase current transmitter, a current mode analog-digital converter (ADC) and a voltage analog-digital converter (DAC). ISFETs, selected by an address selector, of a grid coverage sensitive film and REFETs, selected by the address selector, of a grid coverage passivation film form differential geminate transistors, and the current difference outputted by the differential geminate transistors is converted by the ADC into a digital voltage signal to be outputted. Compared with a voltage mode circuit, the device adopting a current mode detection circuit can work under low working voltage, and is low in circuit power consumption and large in dynamic range; in addition, by adopting the differential detection ways, the imbalance and the temperature drift of the device can be effectively inhibited; meanwhile, the non-ideal characteristics of an ISFET sensor, such as long-term drift, can be effectively compensated.
Owner:INST OF ELECTRONICS CHINESE ACAD OF SCI

Enhanced sensitivity ion sensing devices

A mechanism is provided for enhancing the sensitivity of an ion-sensitive semiconductor device by creating a second gate coupled to a sense plate that can improve the amount of charge brought to the ion-sensitive semiconductor device conductivity modulated region (e.g., a channel region of an ISFET). This is accomplished by utilizing a buried dielectric layer associated with the ion-sensitive semiconductor device conductivity modulated region as the second gate dielectric. The buried dielectric layer is coupled to the sense plate using an isolated well region as a conductor that is coupled to metal layers extending to the sense plate. Some embodiments further use the buried dielectric layer as the sole gate dielectric for the semiconductor device, thereby allowing the traditional gate dielectric region to be coupled to a protection diode. This protection diode then protects the gate dielectric from plasma induced damage and electrostatic discharge.
Owner:NXP USA INC

Electronic sensor and gene detection method based on electronic sensor

The invention relates to the field of biological detection and discloses an electronic sensor and a gene detection method based on the electronic sensor. The electronic sensor comprises ISFET, a nano-wire channel between a source electrode and a drain electrode of the ISFET is provided with a first groove by etching, the bottom of the first groove is provided with nano-pores, or is provided with chemical molecules or is provided with nano-pores and chemical molecules arranged at the nano-pores so that it is avoided that the DNA molecules smoothly slide at a high rate from one side to the other side of the chemical molecules or the nano-pores without control, only after a single-chain DNA to be tested successfully matches a detection basic group, a basic group can be moved forward by the chemical molecules and a matching process of the detection basic group and the basic group of the single-chain DNA to be tested can be accurately detected so that the gene detection result is more accurate, a detection precision is high and detection sensitivity is high.
Owner:SHANGHAI TURTLE TECH
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