47 results about "Crystal anisotropy" patented technology

The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (111), includes a bottom surface in a plane which is common with a plane of the base material; a groove penetrating from the bottom surface to a top of the projection; and a protecting member having a resistance property against a crystal anisotropic etching liquid and covering an inner wall of the groove.

A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate, an etching mask layer having an opening at a position corresponding ink supply port; a step of forming unpenetrated holes through the opening of the etching mask layer in at least two rows in a longitudinal direction of the opening; and a step of forming the ink supply port by crystal anisotropic etching of the substrate in the opening.

A method of processing a substrate includes the steps of providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, opposite to the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.

A method for manufacturing a liquid discharge head including a substrate on which supply ports for supplying a liquid are provided, includes forming a first supply port among the supply ports by performing crystal anisotropic etching on the substrate from one surface of the substrate, and forming a plurality of second supply ports among the supply ports by performing dry etching on the substrate using a crystal anisotropic etching method from a surface exposed toward the one surface of the substrate to a rear surface so that the independent second supply ports are respectively opened on the rear surface.

It is an anisotropism magnetic resistance permalloy film process method, which comprises the following steps: to adopt magnetic control splash method and to select different contents NixFe[1-x] alloy target, wherein x is between 78 to 85; to go to the coating chamber with 99.99 % argon gas for 0.5 to 1 hour before splash; to sustain the gas pressure as 0.1 to 0.5 Pa; to control the thin film impurity content less than 0.1 percent; to process the Ni81Fe19 thin film with accurate content.

Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.