47 results about "Crystal anisotropy" patented technology

An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

The present invention provides a manufacturing method of a substrate for an ink jet head including forming an ink supply opening to a silicon substrate, including (a) forming, at the back surface of the silicon substrate, an etching mask layer, which has an opening that is asymmetric with a center line, extending in the longitudinal direction, of an area on the surface of the silicon substrate where the ink supply opening is to be formed; (b) forming a non-through hole on the silicon substrate via the opening on the etching mask layer; and (c) forming the ink supply opening by performing a crystal anisotropic etching to the silicon substrate from the opening.

The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

A method of manufacturing a substrate for a liquid discharge head having a supply port passing through a silicon substrate provided with an energy-generating element generating the energy used to discharge a liquid and allowing liquid to be supplied to the energy-generating element, includes preparing a silicon substrate in which a first etching mask having a first opening is provided on a first face, and a second etching mask having a second opening is provided on a second face that is the rear face of the first face; forming a first recess towards the second face from the first face within the first opening, and forming a second recess towards the first face from the second face within in the second opening; and performing crystalline anisotropic etching using the first and second etching masks as masks from both of the first and second faces, to form the supply port.

Disclosed are a laser device and method for adjusting and controlling passively Q-switched laser output characteristics through Cr<4>+: YAG crystal anisotropy characteristics. The device comprises a semiconductor laser pumping source (1), a first aspherical lens (2), a second aspherical lens (3), a laser front cavity mirror (4), a laser crystal (5), an adjusting frame (7) with a rotary adjusting function, a Cr<4>+: YAG crystal (8) and a laser output mirror (9), wherein the semiconductor laser pumping source (1), the first aspherical lens (2), the second aspherical lens (3), the laser front cavity mirror (4), the laser crystal (5), the adjusting frame (7), the Cr<4>+: YAG crystal (8) and the laser output mirror (9) are arranged in sequence in the beam propagation direction. The method comprises the first step of constructing Cr<4>+: YAG crystal passively Q-switched laser output, and the second step of rotating and adjusting the adjusting frame to achieve anisotropy changes of Cr<4>+: YAG crystal energy transmittance in a laser resonance cavity, and finally adjusting and controlling the passively Q-switched laser output performance. According to the device and method, the passively Q-switched laser output performance is controlled through the Cr<4>+: YAG crystal anisotropy energy transmittance, and the method is simple and easy to implement.

A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (111), includes a bottom surface in a plane which is common with a plane of the base material; a groove penetrating from the bottom surface to a top of the projection; and a protecting member having a resistance property against a crystal anisotropic etching liquid and covering an inner wall of the groove.

A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate, an etching mask layer having an opening at a position corresponding ink supply port; a step of forming unpenetrated holes through the opening of the etching mask layer in at least two rows in a longitudinal direction of the opening; and a step of forming the ink supply port by crystal anisotropic etching of the substrate in the opening.

A microphone manufacturing method that includes forming an etching protective film on a surface of a semiconductor substrate, opening an etching window through the etching protective film, and forming a sacrifice layer in the etching window and also on an upper face of the etching protective film. The method includes forming a vibration film above said sacrifice layer and starting an etching process of said sacrifice layer through a preformed port at a location wherein said sacrifice layer is sandwiched by said vibration film and the etching protective film and located apart from the etching window. The etching process uses an etchant to which the etching protective film is resistant, to open the etching window. The method includes crystal anisotropically etching said semiconductor substrate through the port and the etching window by using an etchant to which the etching protective film is resistant so that a cavity is formed.

The invention provides a polycrystal magnesium oxide (MgO) sintered body which is capable of having a sintered density close to a theoretical density thereof. The MgO sintered body exhibits excellent mechanical properties and heat conductivity, while reducing contamination of an atmosphere due to gas generation. The invention also provides a production method for the sintered body. The polycrystal MgO sintered body has a unique crystalline anisotropy in which (111) faces are oriented along a surface applied with a uniaxial pressure at a high rate. The polycrystalline MgO sintered body is obtained by a method which includes the steps of: sintering an MgO raw material powder, having a particle size of 1 μm or less, under a uniaxial pressure and then subjecting the sintered powder to a heat treatment under an atmosphere containing 0.05 volume % or more of oxygen, at a temperature of 1273 K or more for 1 minute or more.

A method of processing a substrate includes the steps of providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, opposite to the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.

A method for manufacturing a liquid discharge head including a substrate on which supply ports for supplying a liquid are provided, includes forming a first supply port among the supply ports by performing crystal anisotropic etching on the substrate from one surface of the substrate, and forming a plurality of second supply ports among the supply ports by performing dry etching on the substrate using a crystal anisotropic etching method from a surface exposed toward the one surface of the substrate to a rear surface so that the independent second supply ports are respectively opened on the rear surface.

It is an anisotropism magnetic resistance permalloy film process method, which comprises the following steps: to adopt magnetic control splash method and to select different contents NixFe[1-x] alloy target, wherein x is between 78 to 85; to go to the coating chamber with 99.99 % argon gas for 0.5 to 1 hour before splash; to sustain the gas pressure as 0.1 to 0.5 Pa; to control the thin film impurity content less than 0.1 percent; to process the Ni81Fe19 thin film with accurate content.

The invention belongs to the field of magnetic materials, in particular to an anisotropic high-frequency microwave magnetic material with easy surface and a preparation method thereof. The chemical formula of the magnetic material is expressed according to the atomic ratio: RxFe100‑x‑yBy (at%), wherein, 11.76<x≤15, 5.88≤y≤7.0, R is one of Sm, Er, Tm; the magnetic material It has easy-plane magnetic crystal anisotropy, and its easy-magnetization plane is perpendicular to the C-axis; the magnetic material is prepared by smelting→spinning→coarse crushing→hot pressing→hot deformation→crushing. The high-frequency microwave magnetic micropowder of the easy-plane anisotropic rare earth intermetallic compound obtained by the invention realizes the superposition of the magnetic crystal anisotropy field and the shape anisotropy field, so that the material has more excellent high-frequency characteristics.

Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.