Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing aeolotropic magneto resistor permalloy thin film

An anisotropic magnetic and permalloy technology, which is applied in the fields of magnetic field-controlled resistors, electromagnetic device manufacturing/processing, metal material coating technology, etc., can solve the problems of influence and inability to guarantee comprehensive performance, etc.

Inactive Publication Date: 2007-11-28
UNIV OF SCI & TECH BEIJING
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the ratio of Ni atoms to Fe atoms is affected, and good comprehensive performance cannot be guaranteed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing aeolotropic magneto resistor permalloy thin film

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0008] Specific embodiments: anisotropic permalloy Ni is prepared in a magnetron sputtering apparatus 81 Fe 19 film. First, the glass substrate is ultrasonically cleaned with organic chemical solvents and deionized water, and then placed on the sample base of the sputtering chamber. The substrate is cooled with circulating deionized water, a magnetic field of 250 Oe is applied parallel to the direction of the substrate, and the substrate is always rotated at a rate of 18 revolutions per minute, and the sputtering deposition rate is 0.17 nm / min. Sputtering chamber background vacuum 4×10 -5 Pa, 99.99% pure argon gas was passed into the coating chamber for 0.5 hours before sputtering, and the pressure was maintained at 0.3Pa. Deposit 6nm-thick Ta / 50.0nm-thick Ni sequentially under the condition of high-purity argon gas with 99.99% purity during sputtering at a pressure of 0.4Pa y Fe 100-y . by 50.0nmNi y Fe 100-y Chemical analysis to find out the corresponding Ni when the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

It is an anisotropism magnetic resistance permalloy film process method, which comprises the following steps: to adopt magnetic control splash method and to select different contents NixFe[1-x] alloy target, wherein x is between 78 to 85; to go to the coating chamber with 99.99 % argon gas for 0.5 to 1 hour before splash; to sustain the gas pressure as 0.1 to 0.5 Pa; to control the thin film impurity content less than 0.1 percent; to process the Ni81Fe19 thin film with accurate content.

Description

technical field [0001] The invention relates to a preparation method of a magnetoresistance thin film, in particular to the preparation of an anisotropic magnetoresistance permalloy thin film. Background technique [0002] Anisotropic Magnetoresistance (AMR) permalloy thin film (Ni 81 Fe 19 ) usually choose Ta as Ni 81 Fe 19 The (111) texture-inducing layer of the film, that is, the seed layer, has a simple structure, is relatively easy to manufacture, is cheap, and has good stability, and has great advantages in volume, quality, and cost. Today, the resistance (Giant Magnetoresistance, GMR) effect and its products are rapidly developed, and devices such as magnetic sensors made of traditional AMR thin films still occupy the mainstream in the market. At present, the international community is constantly tapping the potential of AMR thin films, improving their magnetic field sensitivity, reducing noise, etc., in order to expand their application fields. In order to achie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08C23C14/34
Inventor 于广华滕蛟朱逢吾张辉王立锦
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com