30 results about "Chemopotentiating agent" patented technology

Methods and apparatus for protecting the thin films during chemical and / or thermal edge strengthening treatment. In one embodiment, a portion of each individual sheet is laminated. Pairs of sheets are then sealed together such that the thin film sides face inward to form a thin film sandwich. In some embodiments, the sandwich in then immersed in a chemical strengthener. In other embodiments, a localized treatment is applied to the unstrengthened edges.

Methods and apparatus for protecting the thin films during chemical and / or thermal edge strengthening treatment. In one embodiment, a portion of each individual sheet is laminated. Pairs of sheets are then sealed together such that the thin film sides face inward to form a thin film sandwich. In some embodiments, the sandwich in then immersed in a chemical strengthener. In other embodiments, a localized treatment is applied to the unstrengthened edges.

A method of enhancing the permeability of a biological membrane, including the skin or mucosa of an animal or the outer layer of a plant to a permeant is described utilizing microporation of selected depth and optionally one or more of sonic, electromagnetic, mechanical and thermal energy and a chemical enhancer. Microporation is accomplished to form a micropore of selected depth in the biological membrane and the porated site is contacted with the permeant. Additional permeation enhancement measures may be applied to the site to enhance both the flux rate of the permeant into the organism through the micropores as well as into targeted tissues within the organism.

A method of forming a metal wiring in a semiconductor device. A copper wiring is formed by means of CECVD method by which a chemical enhancer layer is utilized for increasing the deposition speed of copper. The damascene pattern is filled by means of MOCVD method using a copper precursor in order to increase the deposition speed. The chemical enhancer layer rises to the surface of copper after deposition of copper by a CECVD method and then the relatively high resistivity chemical enhancer layer that has risen to the surface of copper by plasma process is removed. Therefore, the ultra-fine damascene pattern can be rapidly filled with copper without increasing the resistance of the copper wiring.

A method of forming a metal wiring in a semiconductor device. In order to overcome the limitation of copper filling into the damascene pattern formed on an insulating film using copper as a metal wiring, a chemical enhancer layer is formed on the damascene pattern which is then filled with copper by depositing copper by means of MOCVD method using a copper precursor. The chemical enhancer is exposed to a plasma process or radical plasma process so that it remains only within a bottom portion of the damascene pattern. Therefore, a selective copper deposition within the damascene pattern is provided to accelerate the deposition speed of copper by CECVD method, thus overcoming the limitation of slow and incomplete copper filling for ultra-fine structures.

A method of manufacturing a copper metal wiring in a semiconductor device, by which a plasma process is performed before a diffusion barrier layer is formed and a chemical pre-process using a chemical enhancer is performed so that copper is deposited to form a metal wiring by a chemically enhanced chemical vapor deposition (CECVD) method. The method allows the chemical enhancer to be adhered on the diffusion barrier layer uniformly and stably; therefore, improving the deposition property of a copper thin film.

The invention provides methods for analyzing the protein content of a biological sample, for example to obtain a protein profile of a sample provided by a particular individual. The proteins and protein fragments in the sample are separated on the basis of chemical and / or physical properties and maintained in a separated state at discrete locations on a solid substrate or within a stream of flowing liquid. Raman spectra are then detected as produced by the separated proteins or fragments at the discrete locations such that a spectrum from a discrete location provides information about the structure or identity of one or more particular proteins or fragments at the discrete location. The proteins or fragments at discrete locations can be coated with a metal, such as gold or silver, and / or the separated proteins can be contacted with a chemical enhancer to provide SERS spectra. Method and kits for practicing the invention are also provided.

A method and apparatus are provided for reducing emissions of particulates from diesel engines. Exhaust is passed through a diesel particulate filter having at least two stages comprised of (a) a catalyst section having a platinum group metal catalyst on contact surfaces within the catalyst section and (b) a filter section comprised of passages effective to remove particulates from a moving stream of combustion gases generated by combusting the fuel in the engine and holding them therein to permit their oxidation. Carbon removal is enhanced by utilizing levels of platinum group metal composition, cerium compositions, fuels and / or optional chemical enhancers to generate NO2 in the catalyst section in amounts sufficient to form cerium nitrates in the filter section. The cerium oxide is associated with and maintains dispersion of the platinum in the filter section, and the cerium nitrates are available at the surface and within the soot particles to provide enhanced soot oxidation at a lower balance point.

A system and method for estimating a concentration of monoethanolamine (MEA) in a fluid. A substrate for supporting a sample of the fluid during testing includes a carbon nanotube mat layer, a silver nanowire layer disposed on the carbon nanotube mat layer, and a chemical enhancer layer disposed on the silver nanowire layer. A sample of the fluid is placed on the substrate, and the fluid sample is radiated with electromagnetic radiation at a selected energy level. A detector measures a Raman spectrum emitted from the sample in response to the electromagnetic radiation. A processor estimates the concentration of MEA in the sample from the Raman spectrum and adds a corrosion inhibitor to the fluid in an amount based on the estimated concentration of MEA to reduce the concentration of MEA in the fluid.

The invention discloses a shale gas mining device and method with combination of laser and water jet technologies. The device mainly comprises a laser head, a water jet gun head and others. The laser head can emit controllable energy lasers, the water jet gun head jets active liquid to the surface of shale, the lasers are utilized for heating the active liquid to generate local temperature rise and thermal reaction liquid, an explosive chemical reaction is carried out in the liquid to generate high pressure to crash the shale, shale particles are smaller, and more shale gas is released. In this way, the shale is crashed rapidly, and the shale gas is efficiently obtained. The method can replace a hydraulic fracturing shale crashing mode used in the prior art, in this way, working efficiency can be substantially improved, and the shale gas can be efficiently mined. The active liquid for usage does not contain a chemical reinforcing agent and other contamination reagents, and will not cause water pollution, chemical pollution, methane pollution and other environmental problems.

A method of forming a metal wiring in a semiconductor device is disclosed. In order to improve a low deposition speed in the process technology by which a damascene pattern of an ultra-fine structure is filled with copper by CVD method, a CECVD method is disclosed by which a chemical enhancer layer for increasing the deposition speed of copper is formed and the damascene pattern is then filled by means of MOCVD method using a copper precursor which forms a copper wiring. A diffusion prevention film is formed on the sidewall of the damascene pattern in the shape of a spacer in order to prevent an increase of the via resistance by the diffusion of copper into the sidewalls of the damascene pattern. A chemical enhancer layer is selectively formed on a lower metal layer that is exposed by the damascene pattern, thus allowing a selective partial filling of the damascene pattern. Therefore, copper filling in an ultra-fine structure is facilitated which also minimizes the electrical resistivity of the copper wiring.

A method of manufacturing a metal wiring in a semiconductor device is disclosed. The method comprises forming a photosensitive film so that an underlying metal wiring can be exposed, adhering an chemical enhancer only to the underlying metal wiring, depositing a metal layer by CECVD method so that the metal layer is selectively deposited at the portion in which the chemical enhancer is formed, removing the photosensitive film and chemical enhancer, and forming a diffusion barrier layer spacer at the sidewall of the metal layer to form an upper metal wiring. Therefore, the disclosed method can solve poor contact with an underlying metal wiring due to shortage of processional margin in the process of forming an upper metal wiring in a high integration semiconductor device.