30 results about "Chemopotentiating agent" patented technology

The invention provides methods for analyzing the protein content of a biological sample, for example to obtain a protein profile of a sample provided by a particular individual. The proteins and protein fragments in the sample are separated on the basis of chemical and/or physical properties and maintained in a separated state at discrete locations on a solid substrate or within a stream of flowing liquid. Raman spectra are then detected as produced by the separated proteins or fragments at the discrete locations such that a spectrum from a discrete location provides information about the structure or identity of one or more particular proteins or fragments at the discrete location. The proteins or fragments at discrete locations can be coated with a metal, such as gold or silver, and/or the separated proteins can be contacted with a chemical enhancer to provide SERS spectra. Method and kits for practicing the invention are also provided.

The invention discloses a shale gas mining device and method with combination of laser and water jet technologies. The device mainly comprises a laser head, a water jet gun head and others. The laser head can emit controllable energy lasers, the water jet gun head jets active liquid to the surface of shale, the lasers are utilized for heating the active liquid to generate local temperature rise and thermal reaction liquid, an explosive chemical reaction is carried out in the liquid to generate high pressure to crash the shale, shale particles are smaller, and more shale gas is released. In this way, the shale is crashed rapidly, and the shale gas is efficiently obtained. The method can replace a hydraulic fracturing shale crashing mode used in the prior art, in this way, working efficiency can be substantially improved, and the shale gas can be efficiently mined. The active liquid for usage does not contain a chemical reinforcing agent and other contamination reagents, and will not cause water pollution, chemical pollution, methane pollution and other environmental problems.

A method of forming a metal wiring in a semiconductor device. A copper wiring is formed by means of CECVD method by which a chemical enhancer layer is utilized for increasing the deposition speed of copper. The damascene pattern is filled by means of MOCVD method using a copper precursor in order to increase the deposition speed. The chemical enhancer layer rises to the surface of copper after deposition of copper by a CECVD method and then the relatively high resistivity chemical enhancer layer that has risen to the surface of copper by plasma process is removed. Therefore, the ultra-fine damascene pattern can be rapidly filled with copper without increasing the resistance of the copper wiring.

The present invention provides an agricultural chemical enhancer composition comprising a mixture of (a) a fermentation product of one or more of red beans, peas, yellow corn, white corn, white rice, yucca, potatoes, manioc root, starch from vegetables sources, inorganic minerals, non-iodized sea salt, urea or another equivalent nitrogen source, biodynamic water and an inoculum selected from the group consisting of bacillus microorgasnisms or spores and yeast; and (b) an essential oil such as banana oil, cinnamon oil, coconut oil, vanilla oil and mixtures thereof; and urea or another equivalent nitrogen source and an extract of a plant material selected from the group consisting of marranero fern foliage (Pteridium aquilinum), cola de caballo (horsetail fern) leaves (esquisetum arvense), powdered cinnamon (cinnamomum zeylanicum), garlic cloves (allium sativum), tabasco pepper fruits (capsicum frutescens), pasto kikuyo seeds (pennisetum clandestinum) and mixtures thereof. The enhancer of the invention is combined with agrochemicals to augment their activity.

A method of forming a metal wiring in a semiconductor device. In order to overcome the limitation of copper filling into the damascene pattern formed on an insulating film using copper as a metal wiring, a chemical enhancer layer is formed on the damascene pattern which is then filled with copper by depositing copper by means of MOCVD method using a copper precursor. The chemical enhancer is exposed to a plasma process or radical plasma process so that it remains only within a bottom portion of the damascene pattern. Therefore, a selective copper deposition within the damascene pattern is provided to accelerate the deposition speed of copper by CECVD method, thus overcoming the limitation of slow and incomplete copper filling for ultra-fine structures.

The present invention is directed to compositions and methods of making and using compositions that are useful for treating cells or conditions caused or exacerbated by cell survival mechanisms of the body, particularly conditions exacerbated by cell survival mechanisms involving NF-KB. The compositions and methods of the present invention comprise a sensitizing agent or a chemopotentiating agent. In this regard, cobalamin drug conjugates and NO donors act as chemopotentiating agents. Nitrosylcobalamin is particularly useful as a sensitizing or chemopotentiating agent, and methods utilizing nitrosylcobalamin prior to, simultaneous with and subsequent to radiation or chemotherapy are described, as are compositions which first release a nitrosylcobalamin compound or biologically active analog thereof, and then release the chemotherapeutic agent. Nitrosylcobalamin itself is a chemotherapeutic, and when administered in conjunction with other anti-cancer agents or techniques, a synergistic effect is seen.

A method of manufacturing a metal wiring in a semiconductor device is disclosed. The method comprises forming a photosensitive film so that an underlying metal wiring can be exposed, adhering an chemical enhancer only to the underlying metal wiring, depositing a metal layer by CECVD method so that the metal layer is selectively deposited at the portion in which the chemical enhancer is formed, removing the photosensitive film and chemical enhancer, and forming a diffusion barrier layer spacer at the sidewall of the metal layer to form an upper metal wiring. Therefore, the disclosed method can solve poor contact with an underlying metal wiring due to shortage of processional margin in the process of forming an upper metal wiring in a high integration semiconductor device.

A method of manufacturing a copper metal wiring in a semiconductor device, by which a plasma process is performed before a diffusion barrier layer is formed and a chemical pre-process using a chemical enhancer is performed so that copper is deposited to form a metal wiring by a chemically enhanced chemical vapor deposition (CECVD) method. The method allows the chemical enhancer to be adhered on the diffusion barrier layer uniformly and stably; therefore, improving the deposition property of a copper thin film.

The present invention relates to compositions containing at least one salicylic acid derivative and at least one cosmetic, dermatologic, pharmaceutical, etc. active agent, where the salicylic acid derivative increases, enhances, etc., the efficacy of the active agent, as well as to methods of making and using such compositions. The invention further relates to a method for enhancing the efficacy of active agents with these salicylic acid derivatives.

Strong and soft multi-ply tissue paper products useful as absorbent sanitary products such as bath tissue, facial tissue, and absorbent towels are disclosed. At least one internal surface of the tissue paper product has a surface deposited strengthening agent.