65results about How to "Wide energy gap" patented technology

A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

Provided are a heterocyclic compound which emits blue light and is represented by General Formula (G1) below, and a light-emitting element, a light-emitting device, an electronic device and a lighting device which are formed using the heterocyclic compound represented by General Formula (G1) below. The use of the heterocyclic compound represented by General Formula (G1) makes it possible to provide a light-emitting element which has high emission efficiency, and also a light-emitting device, an electronic device and a lighting device which have reduced power consumption.

Objects of the present invention are to provide the following: a novel heterocyclic compound which can be used as a material in which a light-emitting substance of a light-emitting layer in a light-emitting element is dispersed; a novel heterocyclic compound having a high electron-transport property; a light-emitting element having high current efficiency; and a light-emitting device, an electronic device and a lighting device each having reduced power consumption. Provided are a heterocyclic compound represented by General Formula (G1-1) or (G1-2) below, and a light-emitting element, a light-emitting device, an electronic device and a lighting device each including the heterocyclic compound. Such use of the heterocyclic compound represented by General Formula (G1-1) or (G1-2) makes it possible to provide a light-emitting element having high current efficiency, and a light-emitting device, an electronic device and a lighting device each having reduced power consumption.

An object is to provide a light-emitting element with high emission efficiency which includes a novel carbazole derivative that has a wide energy gap and can be used for a transport layer or a host material in a light-emitting element. A carbazole derivative in which the 4-position of dibenzothiophene or dibenzofuran is bonded to the 2- or 3-position of carbazole has been able to be provided by use of the carbazole derivative. Further, a light-emitting element having high emission efficiency has been able to be provided by use of the carbazole derivative.

The invention provides a 6-mesitylene-6H-6-boron hetero benzo[cd]pyrene derivative containing substituted or non-substituted carbazolyl. Due to the bipolar transmission characteristic, the derivative can effectively balance transmission of carriers and improve transmission efficiency, by using the derivative in phosphorescent organic light-emitting devices as a main material. The invention also provides an organic electroluminescent device that has increased current efficiency, reduced turn-on voltage and good stability, and solves the problems of low transmission efficiency or poor stability of phosphorescent organic light-emitting main materials in the prior art.

The invention provides a phosphorescent host material. The phosphorescent host material has a structural formula as described in the specification; in the structural formula, R is one selected from the group consisting of an H atom and C1-C10 alkyl groups or phenyl groups. The phosphorescent host material is pyridine-substituted difluorene prepared by bonding fluorene containing a carbazole group with pyridine, fluorene and pyridine have high heat stability, the carbazole group has a good hole transport property, and pyridine has a good electron transport property, so the phosphorescent host material has high heat stability and good carrier transport performance. Furthermore, the invention also provides a preparation method for the phosphorescent host material, and the preparation method has simple process. Moreover, the invention further provides an organic electroluminescent device using the phosphorescent host material, and the organic electroluminescent device has high performance.

A carbazole compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. Specifically, a carbazole compound which makes it possible to obtain a light-emitting element having good characteristics when used in a light-emitting element emitting blue phosphorescence is provided. In the carbazole compound, the 9-position of one carbazole, the 9-position of the other carbazole, and the 1-position of a benzimidazole skeleton are bonded to the 1-position, the 3-position, and the 5-position of benzene.

An LED package structure includes a conductive frame assembly, a reflective housing, an UV LED chip disposed on the conductive frame assembly, and a die-attach adhesive for bonding the UV LED chip to the conductive frame assembly. The reflective housing includes Silicone Molding Compound (SMC) and filler mixed in the SMC. The energy gap of the filler is greater than or equal to 4 eV. The energy gap of the filler thereof can be chosen by the following formulas. When the refractive index difference between the filler and the SMC is less than or equal to 0.2, the energy gap of the filler is satisfied the following formula. E≧1240 (nm·eV) / (λ−150(nm)). When the refractive index difference between the filler and the SMC is greater than 0.2, the energy gap of the filler is satisfied the following formula. E≧1240(nm·eV) / (λ−50(nm)).

The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1−x−yINyN, where 0≦x+y≦1, 0≦x≦1 and 0≦y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention.

The invention relates to a boron-containing organic electroluminescent material, a preparation method and application thereof and belongs to the technical field of organic electroluminescence. The novel boron-containing organic electroluminescent material is synthesized through a multi-step buckle reaction, and molecules have a suitable molecular weight (400-1200), a wider energy gap (3.5-4.0eV) and a higher glass transition temperature Tg (120 DEG C or above) and is suitable for use as a light-emitting layer main material. A manufactured organic electroluminescent device has higher current efficiency and longer device life.

The invention belongs to the field of organic electroluminescent materials and discloses an organic semiconductor material containing dibenzothiophene sulfone, a preparation method of the organic semiconductor material and an organic electroluminescent device. The organic semiconductor material has a general formula shown in a drawing, wherein R is a hydrogen atom or C1-C8 alkyl. The organic semiconductor material containing dibenzothiophene sulfone, disclosed by the invention, has excellent thermal stability and has good solubility and film forming property, and shown by spectrum tests, the maximum light emission wavelength of the material is located in a blue light range; meanwhile, due to the existence of carbazole and dibenzothiophene sulfone in the structure of the material, the material has bipolar transmission performance.

The invention discloses a photoelectric material with average benzene as the core and application thereof. The photoelectric material has high triplet-state energy level, high vitrification transfer temperature and good film forming stability and wide energy gap. When the photoelectric material is used as a hole transport / electron blocking material or a luminescent layer material to be applied to an organic luminescent device, voltage can be obviously reduced, and efficiency of equipment is raised. Current efficiency, power efficiency and external quantum efficiency of a device prepared by the use of the photoelectric material are all greatly improved. Meanwhile, life of the device is obviously prolonged.

The invention discloses a reduced graphene oxide, tin dioxide and ferric oxide composite material, and a preparation method and an application thereof. The preparation method of the composite material comprises the following steps: 1, carrying out an oxidation reaction on natural graphite powder to obtain graphene oxide; and 2, carrying out a hydrothermal reduction reaction on graphene oxide, tin tetrachloride pentahydrate and iron chloride hexahydrate to obtain the reduced graphene oxide, tin dioxide and ferric oxide composite material. Tin dioxide and ferric oxide are compounded with reduced graphene oxide to increase the interface polarization ability of the composite material, and the impedance matching and the attenuation matching of the composite material are improved by means of synergism of magnetic loss and dielectric loss in order to improve the microwave absorption performance.

The invention discloses a thermally-activated delayed fluorescence OLED material taking cyclic diketone as a core and application of the OLED material, belonging to the technical field of organic photoelectric materials. The thermally-activated delayed fluorescence OLED material has a structure represented by a formula I (shown in the description). The invention further discloses the application of the OLED material. The OLED material disclosed by the invention is an organic small molecule compound which takes cyclic diketone as a distinguishing feature and is formed by linking an aromatic group with a nitrogen-containing heterocyclic ring. The OLED material has a proper molecular energy level, a relatively high glass-transition temperature and an obvious thermally-activated delayed fluorescence (TADF) characteristic, can be used as a TADF material for preparing a functional layer, particularly a light emitting layer of an organic electroluminescence device, and can be applied to the organic electroluminescence field.

The invention belongs to organic semiconductor materials, and discloses a tetraphenyl silicon containing organic semiconductor material and a preparation method thereof and an organic electroluminescent device. The tetraphenyl silicon containing organic semiconductor material has the chemical structural formula as shown in the specification. According to the tetraphenyl silicon containing organic semiconductor material provided by the invention, performance of the tetraphenyl silicon containing organic semiconductor material is characterized by differential thermal analysis. The result shows that the material has excellent thermal stability, and meanwhile, the material has good solubility and film-forming property. Through a spectral test, the maximum light emitting wavelength of the material is in a blue light range with wider energy gap. In addition, the light emitting material has pyridine ring and phenyl naphthyl amine in the structure, so that the material has better carrier transport performance.

The present invention discloses a triphenylphosphine oxide unit bridged bipolar host material and an application thereof. Firstly, a spiro-[fluorene-9,9'-xanthene] structure is prepared by a cyclization reaction between 2-bromo-fluorenone and phenol, by two steps of Suzuki reaction, carbazole and spiro-[fluorene-9,9'-xanthene] is introduced on a triphenylphosphine oxide structure to obtain a target product SFOPO-Cz. According to the material disclosed by the present invention, the material has the spiro-[fluorene-9,9'-xanthene] group; properties of fluorene of wide energy gap and high luminous efficiency can be fully used; meanwhile, the carbazole group having good hole transporting property is adopted as a hole transport unit; the triphenylphosphine oxide group having strong electron transporting ability is adopted as an electron transport unit; so that implementation of carrier transporting balance is facilitated. A device which is designed and prepared by the material has the advantages of high efficiency, high stability and relatively small efficiency roll-off, and has excellent potential for being a new generation of an electroluminescent phosphor host material.

The present invention relates to a triarylamine-based compound and a preparation method thereof, and applications of the triarylamine-based compound in organic electroluminescent devices, wherein thecompound has a structure represented by a general formula (1), and further has characteristics of high glass transition temperature, good stability, good hole transport ability, high triplet energy level and wide energy gap. According to the present invention, with the application of the compound as the hole transporting or light-emitting layer material in the production of OLED light-emitting devices, the good performances of devices can be achieved, the current efficiency, the power efficiency and the external quantum efficiency of devices are greatly improved, and the service life of the OLED device can be greatly improved; and the triarylamine-based compound has good performance in the OLED device so as to achieve good industrialization prospect. The formula 1 is defined in the specification.

The invention provides a compound containing a fused aryl group and an organic electroluminescent device thereof, and relates to the technical field of photoelectric materials. The compound provided by the invention has high electron mobility, is easy to transport electrons, can balance hole and electron transport, has high triplet state energy level and wide energy gap, and can limit excitons in a luminescent layer, thereby improving the luminous efficiency and service life of the organic electroluminescent device. On the other hand, after the bridging group L0 is introduced, the glass transition temperature and the refractive index of the compound are improved, the film forming property and the thermal stability of the material after evaporation film forming are improved, and when the compound is applied to the organic electroluminescent device, the luminous efficiency of the organic electroluminescent device can be improved, and the service life of the organic electroluminescent device can be prolonged.

The invention provides an organic light-emitting material and device containing anthracene and benzimidazole structure and belongs to the technical field of organic light-emitting materials. The organic light-emitting material containing anthracene and benzimidazole structure is provided; anthracene ring is blue light structure of excellent performance, having high triplet energy level and wide energy gap, benzimidazole groups are connected in molecules, electron transport capacity is improved, and carrier transfer is balanced. Compared with the prior art, the organic light-emitting material containing anthracene and benzimidazole structure has high light-emitting efficiency when applied to organic light-emitting devices, especially as a blue guest material in a light-emitting layer.

The invention belongs to organic semiconductor materials, and discloses a dibenzothiophene sulphone containing organic semiconductor material and a preparation method thereof and an organic electroluminescent device. The dibenzothiophene sulphone containing organic semiconductor material has the chemical structural formula as shown in the specification, wherein A- is -F, -CN or -NO2. According to the dibenzothiophene sulphone containing organic semiconductor material provided by the invention, performance of the dibenzothiophene sulphone containing organic semiconductor material is characterized by differential thermal analysis. The result shows that the material has excellent thermal stability, and meanwhile, the material has good solubility and film-forming property. Through a spectral test, the maximum light emitting wavelength of the material is in a blue light range with wider energy gap. In addition, the light emitting material has dibenzothiophene sulphone, tetra-aryl silicon radicals in the structure, so that the material has better carrier transport performance.

The present invention discloses a crystalline silicon solar cell having a doped silicon carbide layer and a manufacturing method thereof. The solar cell comprises: a semiconductor substrate having a roughened first surface; a doped silicon carbide layer arranged at the first surface and comprising a doping element; an anti-reflecting layer; a plurality of front electrodes arranged on the anti-reflecting layer and penetrating the anti-reflecting layer; and a back electrode layer arranged at a second surface of the semiconductor substrate. As the doped silicon carbide layer has doping reversed to the doping type of the semiconductor substrate and a silicon carbide element, the doped silicon carbide layer has the characteristics of low resistance and wide energy gap, so that the doped silicon carbide layer can be used as an emitter of the solar cell, in addition, the doped silicon carbide layer has low absorption for sunlight, so that quantity of light entering the semiconductor substrate can be increased, thereby improving photoelectric conversion rate of the solar cell.

The invention discloses an ultraviolet light catalyzed electrospinning anti-haze window screen and a preparation method of the ultraviolet light catalyzed electrospinning anti-haze window screen. Thewindow screen has a three-layer composite structure, a base layer is a metal screen mesh, a middle layer is a nanofiber functional membrane formed by directly carrying out electrospinning on the uppersurface of the metal screen mesh by an electrospinning method, the nanofiber functional membrane is a TiO2 / PMMA / PEO / ECA composite nanofiber membrane, TiO2 containing in the nanofiber functional membrane is TiO2 powder with a molecular sieve-like structure, and a nylon net protective layer is compounded on the upper surface of the nanofiber functional membrane through a hot-pressing method. The window screen can filter outdoor air and effectively block particulate pollutants, further can play the role of ultraviolet protection, and the effects of performing sterilization and disinfection and decomposing harmful gases, and prevent pollutants of outdoor haze, ultraviolet light and the like from entering the interior to pollute indoor environments while ensuring indoor and outdoor air ventilation, and further is simple in preparation method, suitable for scale production and very good in application prospects.

The invention provides a spirofluorene and nitrogen-containing hetercyclic organic electroluminescent material and an organic luminescent device thereof and belongs to the technical field of organic photoelectric materials. The spirofluorene and nitrogen-containing hetercyclic organic electroluminescent material structurally contains a spirofluorene structure which is a blue-light structure with excellent property, not only has higher triplet energy level and wider energy gap, but also is higher in vitrifying conversion temperature and difficult in crystallization; by connection of groups suchas phenoxazine and phenothiazine and the like in molecules, the cavity transmission capability of the blue-light main body structure is added, so that the transportation of current carriers is balanced. Compared with the prior art, the spirofluorene and nitrogen-containing hetercyclic organic electroluminescent material is applied to the organic luminescent device, is especially used as a blue luminescent material in a luminescent layer and has relatively-higher luminescent efficiency.

The invention belongs to the field of organic electroluminescence, and particularly relates to an organic electroluminescent material and application. Through reactions of coupling, ring closing and the like, a compound using a biacridine derivative combined with five-membered rings as a core is prepared; the molecule has the proper molecular weight (400 to 1200), wide energy gap (being respectively 3.5 to 4.0eV) and high glass transition temperature Tg (120 DEG C or higher); the compound is suitable for being used as a luminescent layer main body material. In the molecular structure of the material, electron donating groups and electron withdrawing groups are connected through fused ring structure; through the distorted configuration, the space stereochemical structure of the whole molecule is increased; the conduction and the combination of electrons and cavities in the luminescent layer are facilitated; important significance is realized for improving the current efficiency. Compared with a commercial main body material CBP, the organic electroluminescent material has the advantages that for an organic electroluminescent device manufactured by using the material as the main body material, the current efficiency is improved by 20 percent; the service life of the device is prolonged by 75 percent.

The invention discloses a preparation method of a dielectric film with an ultrahigh dielectric constant. The method comprises the following steps: (1) providing a substrate and cleaning the substrateto serve as a substrate for depositing the dielectric film; (2) preparing an HfXO thin film on the substrate by adopting a plasma enhanced atomic layer deposition method, wherein X is Si, Ge, P, Al orTi, and the number of atoms of X doped in HfXO accounts for 5-15%; and (3) carrying out high-temperature rapid annealing treatment on the HfXO film. By forming a crystalline phase structure with an ultrahigh dielectric constant, the preparation of the dielectric film with the ultrahigh dielectric constant is realized. According to the preparation method, the dielectric film with low equivalent gate-oxide thickness, ultrahigh dielectric constant, wide energy gap and high reliability can be prepared, and a feasible path is provided for selection of gate-oxide media in a semiconductor process technology which is rapidly developed along with the Moore law at present.