Tetraphenyl silicon containing organic semiconductor material and preparation method thereof and organic electroluminescent device
An organic semiconductor, tetraphenyl silicon technology, applied in the field of organic semiconductor materials, can solve the problems of high mobility, high thermal stability blue light material shortage, etc., and achieve the effects of easy production and promotion, easy control of production process, and simple process
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[0027] The preparation method of the above-mentioned tetraphenyl silicon-containing organic semiconductor material, the steps are as follows:
[0028] S1, provide the following compounds:
[0029] Compound I: Compound II: Compound III:
[0030] S2, in an inert gas atmosphere (including nitrogen or argon, etc.), the compound I and II are dissolved in an organic solvent containing the first catalyst and the second alkali solution in a molar ratio of 1:0.9 to 1:1, at 70 ~ Suzuki reaction was carried out under reflux at 120°C for 20-48 hours to obtain the structural formula: Compound IV (being NPASiBr) of; Wherein, NPASiBr comprises two kinds of isomers, such as, βNPASiBr and αNPASiBr; Reaction formula is as follows:
[0031] or
[0032] S3. In an inert gas atmosphere, dissolve the compound IV and compound III prepared in step S2 in the second organic solvent containing the second catalyst and the second alkali solution at a molar ratio of 1:1 to 1:1.3, and Carry ...
Embodiment 1
[0046] This embodiment discloses a tetraphenyl silicon-containing organic semiconductor material with the following structural formula, namely N-(4-(diphenyl(4-(pyridin-4-yl)phenyl)silicon)phenyl)-N-phenyl Naphthyl-2-amine (βNPASipPy)
[0047]
[0048] Preparation of N-(4-(diphenyl(4-(pyridin-4-yl)phenyl)silyl)phenyl)-N-phenylnaphthyl-2-amine (βNPASipPy):
[0049]
[0050] Step 1, the preparation of N-(4-((4-bromophenyl)diphenylsilyl)phenyl)-N-phenylnaphthyl-2-amine (βNPASiBr):
[0051] Add 4mmol of bis(4-bromophenyl)diphenylsilane, 4.0mmol of N-boric acid-N-phenylnaphthyl-2-amine, and 0.004mmol of tetrakis(triphenylphosphine)palladium into the reaction flask, and vacuumize , After circling nitrogen for 3 times, make the reaction system in anaerobic state, under the protection of nitrogen, add 60mL of tetrahydrofuran, 2mol / L Na 2 CO 3 Aqueous solution 40ml, the mixture was heated to 70 ° C reflux reaction for 48h.
[0052] After the reaction, the reaction solution wa...
Embodiment 2
[0061] This embodiment discloses a tetraphenyl silicon-containing organic semiconductor material with the following structural formula, namely N-(4-(diphenyl(4-(pyridin-3-yl)phenyl)silicon)phenyl)-N-phenyl Naphthyl-1-amine (αNPASi mPy)
[0062]
[0063] Preparation of N-(4-(diphenyl(4-(pyridin-3-yl)phenyl)silyl)phenyl)-N-phenylnaphthyl-1-amine (αNPASimPy:
[0064]
[0065] Step 1, the preparation of N-(4-((4-bromophenyl)diphenylsilyl)phenyl)-N-phenylnaphthyl-1-amine (αNPASiBr):
[0066] Add 4mmol of bis(4-bromophenyl)diphenylsilane, 3.6mmol of N-boronate-N-phenylnaphthyl-1-amine, and 0.004mmol of tetrakis(triphenylphosphine)palladium into the reaction flask, After evacuating and circulating nitrogen for 3 times, the reaction system was in an oxygen-free state. Under the protection of nitrogen, 60 mL of toluene and 2 mol / L K 2 CO 3 Aqueous solution 45ml, the mixture was heated to 120 ℃ reflux reaction for 20h.
[0067] After the reaction, the reaction solution was pou...
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