62results about How to "Sensitivity is deteriorated" patented technology

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Disclosed is a method for fabricating a high-performance field-effect transistor biosensor for diagnosing cancers using micro conductive polymer nanomaterials funtionalized with anti-VEGF aptamer. Disclosed is a high-sensitivity field-effect transistor biosensor for diagnosing cancers using a micro conductive polymer nanomaterial transistor array including a micro polymer nanomaterial transistor array including a channel region provided with a metal source electrode, a metal drain electrode, a gate and micro polymer nanomaterials, and an anti-VEGF aptamer covalently bound to the surface of the micro polymer nanomaterials constituting the channel region of the micro polymer nanomaterials transistor array, to target VEGF (Vascular endothelial growth factor).

A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.

The present invention provides a gas sensor having excellent humidity resistance even if used in a high temperature and high humidity atmosphere. According to the present invention, a gas sensor is comprised of: a silicon substrate; a metal-oxide semiconductor portion comprised mainly of SnO2 and formed on the substrate; and a catalytic portion comprised of Pd and dispersed on a surface of the metal-oxide semiconductor portion, wherein the metal-oxide semiconductor portion and the catalytic portion constitute a gas sensing portion. Furthermore, an insulating portion comprised mainly of SiO2 is formed dispersedly on a surface of the gas sensing portion. Further, the catalytic portion and the insulating portion are formed on the surface of the metal-oxide semiconductor portion so that the surface additive rate, which is expressed by Si / (Pd+Si) representing the ratio in the number of atoms of Si to Pd, of the gas sensing portion having the insulating portion may be 65% or more to 97% or less, and so that the surface additive rate, which is expressed by Si / (Sn+Si) representing the ratio in the number of atoms of Si to Sn, of the gas sensing portion may be 75% or more to 97% or less.

The piezo-resistance type triaxial acceleration sensor includes a frame section, a mass section disposed in the frame section, beam elements which flexibly support the mass section, and piezo-resistors for the X, Y and Z axes formed on the beam elements. The length of the Z-axis piezo-resistors is longer than the length of the X-axis piezo-resistors and the Y-axis piezo-resistors, so as to decrease the sensitivity.

An inexpensive image forming apparatus, which can suppress a ghost to obtain an image maintaining satisfactory density and gradations for a long time. The apparatus including an electrophotographic photosensitive member, a contact charger in contact with the photosensitive member for charging the photosensitive member, a charging voltage applying device for applying direct current voltage to the contact charger, a charging current detector for detecting electric current flowing through the contact charger, a pre-exposure device for exposing the photosensitive member to light to remove residual charge on the photosensitive member, and a pre-exposure light amount controller for controlling an exposure light amount of the pre-exposure device in image formation based on the results of detection by the charging current detector when the exposure light amount of the pre-exposure device is changed with direct current voltage applied from the charging voltage applying device to the contact charger during non-image formation.

A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.