117results about How to "Reduce the number of masks" patented technology

The invention provides a manufacturing method of a TFT substrate and a prepared TFT substrate. According to the manufacturing method of the TFT substrate, based on the characteristic of high visible light transmittance of a transparent metal oxide semiconductor material and doping processing is performed on a transparent metal oxide semiconductor, so that a transparent metal oxide conductor can be obtained, and at the same time, an active layer and a pixel electrode are formed, and therefore, the number of the times of photo masking can be decreased, production efficiency can be improved, and production cost can be reduced; in addition, based on only one semi-transparent photo mask, exposure and etching are performed, so that a common electrode, and a stack light shielding layer formed by a light shielding layer and a transparent conductive layer can be obtained, and therefore, the number of the times of photo masking can be further decreased; and the light shielding layer is arranged at the lower part of a TFT, so that the electrical stability of the TFT will not be affected by illumination. The TFT substrate of the invention is simple in manufacturing process and low in production cost; and the light shielding layer is arranged at the lower part of the TFT, so that the electrical stability of the TFT will not be affected by illumination.

The invention relates to an active matrix organic light emitting diode driving back plate and a preparation method of the active matrix organic light emitting diode driving back plate. The preparation method comprises the steps that a metal conducting layer is deposited and patterned on a substrate to be used as a grid electrode metal layer; an insulating film is deposited on the grid electrode metal layer to be used as a grid electrode insulating layer; a metal oxide film is deposited and patterned on the grid electrode insulating layer to be used as an active layer; another insulating film is deposited on the active layer to be used as an etching barrier layer; contact holes, the effective area of a memory capacitor and a source drain electrode region of a film transistor are patterned and defined on the etching barrier layer; and a conducting film is deposited and patterned on the etching barrier layer to be used as a source drain electrode layer of the film transistor. The memory capacitor uses the grid electrode metal layer as a lower electrode plate, uses the grid electrode insulating layer as a dielectric layer and uses the active source as a protecting layer of the grid electrode insulating layer, the effective area of the capacitor is defined by the etching barrier layer, and in addition, the conducting film layer is used as an upper electrode plate of the capacitor. The active matrix organic light emitting diode driving back plate and the preparation method have the characteristics that the preparation process is simple, and the cost is low. The important industry application value technology is realized.

The invention discloses a polysilicon TFT used for LCD and a manufacturing method thereof. The TFT includes an effective pattern formed on the substrate, a gate insulating layer formed on the substrate including the effective pattern, and a gate insulating layer formed on the gate insulating layer across the effective pattern and includes a method for defining the first impurity region, the second impurity region and the The gate line of the gate electrode of the channel region, the insulating interlayer formed on the gate insulating layer including the gate line, the data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole, and formed on the The pixel electrode on the same insulating interlayer as the data line and connected to the first impurity region through the second contact hole, wherein the first contact hole is formed on the second impurity region through the gate insulating layer and the insulating interlayer, and the second contact A hole is formed on the first impurity region through the gate insulating layer and the insulating interlayer. The number of masks can be reduced to 5 or 6, thus simplifying the production process.

The invention discloses a manufacturing method of an array substrate, which relates to the technical field of display and comprises the following steps of: S1, forming graphs of a semiconductor layer, a gate insulation layer, a grid electrode and a grid line on the substrate; S2, forming a metal diffusion layer on the semiconductor graph which is not covered by the gate insulation layer on the substrate after step 1, and forming barrier layers in other areas; S3, forming a passivation layer on the substrate after step 2; and S4, forming graphs of a through hole, a source drain, a data line and a pixel electrode on the passivation layer, wherein the source drain is connected with the metal diffusion layer through the through hole. The invention also discloses an array substrate and a display device. Compared with the conventional mask manufacturing process more than four times, the process flow of the manufacturing method disclosed by the invention is reduced, and the process cost is reduced.

The invention discloses a ray detector and a manufacturing method thereof. A grid layer and an insulating layer are sequentially formed on a substrate, a photoelectric diode and a source drain layer are formed on the substrate with the insulating layer, a drain of the source drain layer is connected with the photoelectric diode, an active layer is formed on the source drain layer and contacts with the insulating layer, a first passivation layer is formed on the active layer and the source drain layer, a conductive film layer is formed on the photoelectric diode, the source drain layer and the first passivation layer, and a second passivation layer is manufactured on the conductive film layer. By the aid of the technical scheme, compared with the prior art, the ray detector has the advantages that masking frequency is decreased, production cycle is effectively shortened, production efficiency is improved, manufacturing cost is reduced, the sensitivity of the ray detector is improved, and power consumption of the ray detector is reduced.

The invention discloses a display panel and a preparation method thereof and a display device. The display panel comprises a display area including a transparent display area and a non-transparent display area surrounding the transparent display area. The display panel further comprises an array substrate in the display area. The display panel also comprises a first electrode which is arranged onthe array substrate. The thickness of the first electrode of the transparent display area is less than the thickness of the first electrode of the non-transparent display area, and the transmittance of the first electrode of the transparent display area is greater than or equal to 70%. According to the display panel and the display device, the transmittance of the transparent display area can be effectively increased. The preparation method of the display panel has simple steps and can reduce the number of times of using the light mask and the number of the light mask and effectively improvesthe production efficiency.