Fabrication method of low temperature poly-silicon array substrate, array substrate and display panel

Abstract

The invention discloses a fabrication method of a low temperature poly-silicon array substrate, the array substrate and a display panel. The fabrication method comprises the steps of arranging a substrate, and forming a buffer layer on the substrate; forming a doped amorphous silicon film layer on the buffer layer by a mode of vapor deposition of a first mixed gas and a doped ion gas; dehydrogenizing the amorphous silicon film layer by a mode of vapor deposition of a second mixed gas; annealing the dehydrogenized amorphous silicon film layer so that doped ions are diffused to form a poly-silicon layer; and patterning the poly-silicon layer. By the fabrication method, the fabrication process of the low temperature poly-silicon array substrate can be effectively reduced, the investment of fabrication equipment is reduced, and the fabrication cost is further reduced.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a method for preparing a low-temperature polysilicon array substrate, the array substrate and a display panel. Background technique [0002] With low temperature polysilicon technology LTPS (Low Temperature Poly-silicon) is currently developing rapidly, its biggest advantage lies in ultra-thin, light weight, low power consumption, can provide more vivid colors and clearer images. [0003] In the manufacturing process of the LTPS array substrate, when performing doping, the polysilicon layer is generally formed first, and then the channel doping, N-type doping, and P-type doping are performed. Not only the operation process is too complicated due to many processes, but also , each doping must go through a photomask, which increases the cost of the entire manufacturing process. Contents of the invention [0004] The technical problem mainly solved by the present invention i...

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Problems solved by technology

[0003] In the manufacturing process of the LTPS array substrate, when performing doping, the polysilicon layer is generally formed first, and then the channel doping, N-type doping, and P-type doping are performed. Not only the operation process is too complicated due to many processes, but also , each doping must go through a photomask, which increases the cost of the entire manufacturing process

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