41results about How to "Reduce read noise" patented technology

A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

The present invention provides internal gain charge coupled devices (CCD) and CT scanners that incorporate an internal gain CCD. A combined positron emission tomography and CT scanner is also provided.

Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.

Methods and digital imaging devices disclosed herein are adapted to capture images of a specimen in a chemical reaction using a series of short exposures of light emissions from the specimen over a period of time. The series of short exposures is captured using an array of pixels of an image sensor in the digital imaging device that are configured for performing continuous non-destructive read operations to read out a set of non-destructive read images of the specimen from the pixel array. In one embodiment, images are captured by delaying the read out until at or near the end of the chemical reaction to reduce read noise in the images. The signals read out from the image sensor can be continuously monitored and the capturing of images can be discontinued either automatically or based on a command from a user. The captured images can then be displayed in a graphical display.

The invention discloses a large dynamic range semi-floating gate image sensor, comprising a pixel array, a current processing column level circuit and a voltage processing column level circuit, the pixel array includes a plurality of pixels, each of the pixels includes a semi-floating gate A transistor and a first voltage conversion circuit, the first voltage conversion circuit is used to convert the current signal output by the semi-floating gate transistor into a voltage signal, and sample and output the reset voltage and the signal voltage respectively, so as to realize pixel-level correlated double sampling, reduce read noise. In the present invention, a voltage column-level processing circuit is added to the semi-floating gate image sensor, and a voltage conversion circuit is added to each pixel, so that the image sensor can take into account the large full well charge capacity and high conversion gain, and can be used in high background and low background. It can be imaged at any time, which greatly expands the application range of the semi-floating gate image sensor; in addition, binning between pixels can also be realized, which further expands the dynamic range of the image sensor.

The invention discloses a high-luminous sensitivity CMOS image sensor pixel structure which comprises M pixel units and a control unit. Each pixel unit comprise a light sensing unit and a reading circuit, wherein the light sensing unit comprises a photodiode and N pass transistors; one of the N pass transistors of each pixel unit is connected with the reading circuit of the pixel unit, and the remaining N-1 pass transistors of each of at least M-N+1 pixel units are connected with the reading circuits of the other N-1 pixel units respectively; the reading circuit of each of at least M-N+1 pixel units is connected with one pass transistor of the pixel unit and the N-1 pass transistors of the other different pixel units, so that photoproduction signals of the N pixel units are read at one time; the control unit controls the M reading circuits to read the signals according to a specified order, so that the photoproduction signals of at least M-N+1 pixel units are read for N times in sequence. The high-luminous sensitivity CMOS image sensor pixel structure can increase the luminous sensitivity and signal to noise ratio on the condition of low illumination.

A global exposure pixel unit disclosed by the present invention includes a substrate and a dielectric layer region arranged in a vertical direction, the substrate includes a photodiode, transistors and injection regions respectively located on both sides of the photodiode; the dielectric layer region includes the first A dielectric layer, a second dielectric layer up to the Mth dielectric layer, and adjacent dielectric layers are separated by an etching barrier layer; the first dielectric layer, the second dielectric layer up to the Mth dielectric layer respectively contain a first metal layer , the second metal layer to the Mth metal layer; the trench metal located in the odd-numbered layer is connected to the source and drain of the transistor through the corresponding contact metal to form the upper plate of the storage capacitor, and the trench metal located in the even-numbered layer is connected to the source and drain of the transistor through the corresponding contact metal The injection region is connected to the lower electrode plate forming the storage capacitor to form the storage capacitor of the pixel unit. The global exposure pixel unit provided by the present invention increases the capacitance value of the storage capacitor, reduces the readout noise of the pixel unit, and improves the sensitivity of the pixel unit.

The invention provides a global exposure pixel unit, a capacitor structure and a preparation method. Through forming a first capacitor structure, a second capacitor structure and a third capacitor structure at a longitudinal direction, and connecting the three capacitor structures together in a parallel connection manner, on the basis of not increasing the area of the capacitor structure of the global exposure pixel unit, the storage capacitance value of the capacitor structure is increased, and the readout noise is reduced; and meanwhile, the area of a photodiode photosensitive area of the whole global exposure pixel unit is not affected, and the performance of a device is improved.

The invention provides a backside illumination global pixel unit structure and a preparation method thereof. The preparation method includes the following steps: conducting reflection of incident light by using a light-blocking isolation groove and an additional capacitance top crown, preventing the incident light from entering a charge signal memory block of a capacitor structure, and forming an additional capacitor structure on a back surface of a silicon lining in correspondence to the capacitor structure, the additional capacitor structure being in parallel to the capacitor structure. The backside illumination global pixel unit structure does not take too much an area of a pixel unit, does not influence a photosensitive area of a photodiode in the pixel unit, does not low agility of a device, can increase memory capacitance of the global pixel unit, lowers readout noise of the global pixel unit and increases entire performance of the global pixel unit.

The invention discloses a signal processing system of a variable-band multi-spectral camera based on an area array CCD, including a variable-spectrum timing controller, a drive circuit, a frame-transfer area array CCD with the function of pouring charges, and an analog-to-digital conversion circuit and video processors. The variable spectrum timing controller generates timing signals for driving the area array CCD to work according to the specified spectrum; the driving circuit converts the timing signals into driving signals of corresponding amplitudes; the frame transfer area array CCD with the function of dumping charges Under the action of the output spectrum information; the analog-to-digital conversion circuit converts the analog signal output by the CCD into a digital signal; the video processor receives the digital image signal and processes the image information according to the input parameter requirements. Compared with the signal processing system of the traditional multi-line array multi-spectral camera, the present invention has the characteristics of large number of spectral segments, real-time adjustable spectral range of spectral segments, high adjustment precision of spectral segment width, and the like.