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307 results about "Conversion gain" patented technology

Shunting-type isothermal sulfur-tolerant conversion process and equipment thereof

ActiveCN101704513ASatisfy conversion rate requirementsMeet the requirements of adiabatic conversion control temperature riseHydrogenChemical industryShunt typesSulfur
The invention discloses a shunting-type isothermal sulfur-tolerant conversion process. The process comprises the following steps: shunting raw coal gas from exterior into at least two parts; leading overheat stream in the first part of the raw coal gas to increase the temperature to 200-300 DEG C; and then entering a first-stage conversion reaction step to carry out a conversion reaction and generate first conversion gas; and conveying the other part of the raw coal gas to next-stage conversion reaction step to carry out a conversion reaction. The catalyst bed of a shift converter has the advantages of stable temperature, simple control, convenient operation and low output CO content. The invention has the advantages of short conversion flows, few equipment, reduced resistance, great byproduct stream amount, high overheat temperature, stream pressure and heat recovery rate, and the like, thereby achieving the aims of reducing conversion stages, equipment number and resistance fall, decreasing investment, having great byproduct stream amount and high overheat temperature, stream pressure and heat recovery rate, reducing conversion stream consumption and outward wastewater discharge, protecting the environment and easily maximizing the device equipment. The invention also discloses shunting-type isothermal sulfur-tolerant conversion equipment used by the process.
Owner:SHANGHAI INT ENG CONSULTING

Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation

The exemplary embodiments provide an imager with dual conversion gain charge storage and thus, improved dynamic range. A dual conversion gain element (e.g., Schottky diode) is coupled between a floating diffusion region and a respective capacitor. The dual conversion gain element switches in the capacitance of the capacitor, in response to charge stored at the floating diffusion region, to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In an additional aspect, the exemplary embodiments provide an ohmic contact between the gate of a source follower transistor and the floating diffusion region which assists in the readout of the dual conversion gain output signal of a pixel.
Owner:APTINA IMAGING CORP

Gated vertical punch through device used as a high performance charge detection amplifier

ActiveUS7075575B2Large output voltage swingHigh conversion factorTelevision system detailsTelevision system scanning detailsLow noiseCMOS
A charge detection system used in an image sensor consists of the vertical punch through transistor with the gate surrounding its source and connected to it. The charge detector has a large conversion gain, high dynamic range, low reset feed through, and low noise. It senses charge nondestructively, which avoids generation of kTC noise. Additional embodiments of the invention include a standard reset gate option, a resistive reset gate option, and a lateral punch through transistor reset option to minimize the reset feed through. The charge detection system can be used in all know CCD image sensor architectures as well as in most CMOS image sensor architectures.
Owner:ISETEX

Dual conversion gain high dynamic range readout for comparator of double ramp analog to digital converter

Example comparators as discussed herein may include a second stage coupled to provide an output in response to an intermediate voltage, a first stage coupled to provide the intermediate voltage in response to an input. The first stage including a pair of cascode devices coupled to a current mirror, a low gain input coupled to inputs of the first stage via first switches, and further selectively coupled to the pair of cascode devices via second switches, and a high gain input coupled to the first and second inputs of the first stage via the first switches, and further selectively coupled to the pair of cascode devices via fourth switches. Based on a low conversion gain mode, the low gain input may be coupled to the inputs by the first switches, and further coupled to the pair of cascode devices by the second switches in response to a control signal being in a first state, and based on a high conversion gain mode, the high gain input may be coupled to the first and second inputs by the first switches, and further coupled to the pair of cascode device by the fourth switch in response to the control signal being in a second state.
Owner:OMNIVISION TECH INC

Fusion structure of LNA (low noise amplifier) and frequency mixer

The invention relates to a fusion structure of an LNA and a frequency mixer. The fusion structure comprises a low noise transconductance amplifier stage, a switching frequency mixing stage and a resistance loading stage, wherein the low noise transconductance amplifier stage is divided into two parts, a first part adopts a cross coupling main-auxiliary noise offset technology, a main transconductance pipe adopts a cross coupling structure so as to double an equivalent transconductance value, an auxiliary transconductance pipe provides an appropriate transconductance value, and the noise of the main transconductance pipe is offset through the main-auxiliary structure; and a second part adopts a common-source-level structure, then gain is provided, direct current flowing through switching tubes is reduced, and flicker noise is reduced. The switching frequency mixing stage modulates radio-frequency current output from the low noise transconductance amplifier stage and outputs intermediate-frequency current, and source electrodes of two groups of switching tubes are connected through an inductor, so that the flicker noise is reduced, and the conversion gain is improved. The resistance loading stage adopts an RC (current limiting resistor) lowpass filtering network to convert the intermediate-frequency current into an intermediate-frequency voltage signal for outputting. The fusion structure of the LNA and the frequency mixer has the characteristics of low noise, high gain and low power consumption.
Owner:SOUTHEAST UNIV

CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing

The invention describes a solid-state CMOS image sensor array and discloses image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for a single photodiode, for charge storage and sensing. Thus, the valuable pixel area saved by employing the BCMD transistor for charge storage and sensing is used by placing several BCMD transistors coupled to one photodiode. This increases the Dynamic Range (DR) of the sensor, since the same photodiode can integrate charge for different integration times, both long and short. This allows sensing of two different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. The signal processing circuits located at the periphery of the array can then process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed is an image sensor array with pixels that use BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors by applying various biases to the gates. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and the same structure can be used to detect, at the same time, low level signals with high conversion gain and thus low noise.
Owner:SEMICON COMPONENTS IND LLC
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