The invention discloses a
wafer encapsulation method. The method comprises the following steps that: a
wafer cutter is utilized to
cut a
wafer, a wafer is sucked by a wafer mounting device, and the
tin bumps of the wafer are coated with
soldering flux; a paste
coating and printing device is utilized to apply non-
conductive paste onto the front surface of a substrate by means of steel plate printing, rubber head transfer or air valve jet printing; the
tin bumps are directly welded on the
copper pads of the substrate through using a post-
tin melting
welding technology under 290 DEG C to 300 DEG C; a post-wafer mounting material is baked, and
plasma cleaning and resin mould pressing encapsulation are carried out; and a post-tin melting
welding encapsulation body can be obtained. According to the wafer encapsulation method of the invention, the post-tin melting
welding encapsulation body is obtained through a post-tin melting welding procedure; the post-tin melting welding encapsulation body requires the application of one non-
conductive paste layer onto the surface of the substrate, and a paste
coating and printing
machine has a built-in non-
conductive paste coating function, and therefore,
work hours are not affected. Compared with a conventional wafer encapsulation process, the wafer encapsulation method does not contain reflow baking and
soldering flux washing, and therefore, equipment can be reduced, and manpower and
soldering flux cleaning costs can be also decreased.