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127results about How to "Reduce floor area" patented technology

Continuous paper web duplex inkjet printing unit

It is sought to reduce the planar area on which a continuous paper web duplex inkjet printing unit is installed. To this end, a continuous paper web duplex inkjet printing unit for inkjet printing on both sides of a continuous paper web with an inkjet printing head in an inkjet printer is configured to comprise a plurality of inkjet printers 11a-11h disposed so that they lie vertically in steps and their inkjet printing heads face downwards, and a paper threading path 15 disposed below such an inkjet printer or printers in each steps for permitting the continuous paper web to be passed zigzag from an upper to a lower step successively.
Owner:TOKYO KIKAI SEISAKUCHI LTD

Millimeter-wave high-gain and high-radiation-efficiency slot antenna array based on ridge gap waveguide

The present invention discloses a millimeter-wave high-gain and high-radiation-efficiency slot antenna array based on a ridge gap waveguide. The millimeter-wave high-gain high-radiation-efficiency slot antenna array comprises an upper layer structure, a middle layer structure and a lower layer structure, wherein the uppermost layer is an all-metal radiation unit layer manufactured through machining and is composed of 16 inverted trapezoidal slot radiation units at equal intervals; the middle layer is a substrate integrated waveguide high-order mode resonant cavity feed layer processed by a multilayer printed circuit board technology, and the substrate integrated waveguide high-order mode resonant cavity feed layer is composed of an upper planar structure, a middle planar structure and a lower planar structure. A metal printing surface with rectangular gaps is arranged above the substrate integrated waveguide high-order mode resonant cavity feed layer. A dielectric substrate with periodically arranged metal through holes is arranged in the middle, and a metal plate with four rectangular coupling holes is arranged below the dielectric substrate; and the bottommost layer is a machinedridge gap waveguide feed network layer and comprises a metal ridge line, metal pins surrounding the metal ridge line and a metal bottom plate. The whole antenna array is small in size, light in weight and high in integration level, and high gain and high radiation efficiency are realized in a working bandwidth.
Owner:NANJING UNIV OF SCI & TECH

Display substrate and manufacture method thereof, display device and manufacture method thereof, and mobile terminal

The invention discloses a display substrate and a manufacture method thereof, a display device and a manufacture method thereof, and a mobile terminal, relates to the technical field of displaying andis intended to increase screen-to-body ratio of the mobile terminal. The display substrate comprises a rigid substrate, a flexible substrate, a pixel structure and a binding terminal, wherein the rigid substrate comprises a portion corresponding to a display area of the display substrate, the flexible substrate is positioned on the rigid substrate and comprises a portion corresponding to the display area of the display substrate and a portion corresponding to a binding area of the display substrate, the pixel structure is positioned in an area of the flexible substrate corresponding to the display area of the display substrate, the binding terminal is positioned in an area of the flexible substrate corresponding to the binding area of the display substrate, and the part of the flexible substrate corresponding to the binding area is flexible. After the display device with the display substrate provided herein is applied to the mobile terminal and the part of the flexible substrate corresponding to the binding area is bent, the screen-to-body ratio of the mobile terminal is increased.
Owner:BOE HEBEI MOBILE DISPLAY TECH +1

Storage module and storage equipment

The invention relates to the technical field of storage and discloses a storage module and storage equipment comprising the storage module. The storage module comprises a substrate, an interface contact group and a circuit component group packaged on an inner side face of the substrate, wherein the interface contact group is electrically connected to the circuit component group; and the circuit component group is hierarchically laminated on the inner side face of the substrate. Compared with the prior art, the circuit component group in the storage module is hierarchically laminated on the substrate, so that a designer can distribute a hierarchical structure according to dimension of a circuit component in the circuit component group, while length of the substrate is only needed to be slightly greater than the longest hierarchical structure; therefore, a plane area of the circuit component occupying the inner side face of the substrate is greatly reduced, and an effect of reducing volume of the storage module is achieved. Moreover, the circuit component group is not needed to be reduced or other lower-capacity circuit component groups are not needed to be replaced, and the problem that the capacity of the storage module is reduced due to the reduced volume of the storage module is solved.
Owner:SHENZHEN NETCOM ELECTRONICS CO LTD

Three-dimensional stack structure of thin-film ceramic circuit

The invention provides a three-dimensional stack structure of a thin-film ceramic circuit. Between two adjacent thin-film ceramic substrates, through ball mounting welding or prefabricated pad welding, stacking of more than three thin-film ceramic circuit substrates is realized. Solid metal through holes are used for realizing electric connection of a random layer. The structure comprises a local electromagnetic self-shielding structure of a chip and/or a passive component. The local electromagnetic self-shielding structure comprises an upper metal layer, a lower metal layer and side surface solid metal through holes. The three-dimensional stack structure can realize stacking of the thin-film ceramic circuit so that an active chip, an RF structure, a high-power structure, a broadband switching structure and the like are integrally integrated in a three-dimensional direction, thereby reducing plan area of a function core by more than 70%, effectively improving product integration level, synchronously realizing hermetic sealing and electromagnetic self-shielding, and improving product adaptability. The three-dimensional stack structure can replace 60-70% of similar products and has advantages of saving cost by more than 60% and improving production efficiency by more than 40%.
Owner:SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP

Component built-in wiring board and manufacturing method of component built-in wiring board

Disclosed is a component built-in wiring board including: a first insulating layer on a second one having laminated at least two insulating layers; a semiconductor chip buried in the second insulating layer, having a terminal pad; a wiring pattern between the first and the second insulating layers, including a mounting land and having a roughened surface facing the second insulating layer; a conductive bump between the terminal pad and the mounting land; a resin between the semiconductor chip and both the first insulating layer and the wiring pattern; a second wiring pattern between the at least two insulating layers; and an interlayer connector between surfaces of the wiring pattern and the second wiring pattern to penetrate partly through the second insulating layer in a layered direction, made of a conductive composition, and having a shape with an axis along the layered direction and a diameter varying in an axial direction.
Owner:DAI NIPPON PRINTING CO LTD

Three-dimensional microcomputer electric transducer

The invention provides a three-dimensional microcomputer electric transducer. The three-dimensional microcomputer electric transducer comprises a plurality of movable first electrodes, a plurality of movable second electrodes, a plurality of fixed third electrodes, and a plurality of fixed fourth electrodes, wherein the first electrodes and the adjacent third electrodes form at least one first capacitor and at least one second capacitor, and the second electrodes and the adjacent fourth electrodes form at least one third capacitor. The capacitance of the first capacitor changes displacement of a mass block, the displacement is reflected in a first axis direction, the capacitance of the second capacitor changes displacement of the mass block, the displacement is reflected in a second axis direction, and the capacitance of the third capacitor changes displacement of the mass block, and the displacement is reflected in a third axis direction. The first axis, the second axis and the third axis define a three-dimensional coordinate system.
Owner:PIXART IMAGING INC

Heat medium heating apparatus and vehicular air-conditioning system including same

Provided is a heat medium heating apparatus, which can reduce the thermal contact resistance between flat heat exchanger tubes and PTC heaters, improve the heat transfer performance, efficiently cool and control heat-generating electrical components on a board of the the PTC heaters and realize reduction in weight and low cost. The heat medium heating apparatus includes: the plurality of flat heat exchanger tubes 12; the PTC heaters 13 that are respectively incorporated between flat tube parts of the flat heat exchanger tubes 12; a heat exchanger holding member 15 that press-fixes the flat heat exchanger tubes 12 and the PTC heaters 13, from one side of the flat heat exchanger tubes 12 to an inner surface of a casing 11; and a control board 17 that has a surface on which a control circuit 21 is mounted, the control circuit 21 including heat-generating electrical components 20 that control the PTC heaters 13, in which the control board 17 includes heat penetration parts that are formed so as to pass through the control board 17 correspondingly to mounting positions of the heat-generating electrical components 20, and the heat-generating electrical components 20 are mounted so as to be cooled via the heat penetration parts.
Owner:MITSUBISHI HEAVY IND LTD

Memory

This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the bit line and the first word line and between the bit line and the second word line respectively at least on a region where the bit line and the first and second word lines intersect with each other. The bit line, the first word line and the first ferroelectric film constitute a first ferroelectric capacitor while the bit line, the second word line and the second ferroelectric film constitute a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor constitute a memory cell.
Owner:PATRENELLA CAPITAL LTD LLC

Manufacturing method of epitaxial structure of semiconductor

ActiveCN108878611AReduce floor areaLow average dislocation densitySemiconductor devicesDislocationEngineering
The invention provides a manufacturing method of an epitaxial structure of a semiconductor, and relates to the technical field of semiconductors. First, an AlN buffer layer is sputtered on a pre-set patterned substrate, wherein the surface of the patterned substrate comprises a plurality of regular hexagonal structures arranged periodically, the regular hexagonal structures are arranged accordingto preset parameters, the regular hexagonal structures comprise regular hexagonal bottom faces and cones connected to the bottom faces, and the bottom faces are parallel to the c-faces of a substratematerial; a nitride buffer layer then grows on the AlN buffer layer; the nitride buffer layer grows along the c-faces between the cones of every two adjacent regular hexagonal structures; and finally,a nitride merged layer grows on the nitride buffer layer. The manufacturing method of the epitaxial structure of the semiconductor has the effects of improving the flatness of the surface of the semiconductor, reducing the dislocation density of the semiconductor and enabling the quality of crystal lattice to be better.
Owner:GUANGDONG INST OF SEMICON IND TECH

Equal-directional array type rectifier bridge stack

The invention provides an equal-directional array type rectifier bridge stack which is compact in structure and more reasonable in whole layout, so that the volume and the cost of a product are effectively reduced. The equal-directional array type rectifier bridge stack comprises a chip I, a chip II, a chip III and a chip IV, a framework I, a framework II, a framework III and a framework IV, a jumper wire I, a jumper wire II, a jumper wire III and a jumper wire IV; each one of the framework I, the framework II, the framework III and the framework IV is formed by a respective body and a pin; the four frameworks are in an opposite-side layout; the bodies of the framework I and the framework III are rectangular; an insulating distance is kept between the bodies and the bodies are located at one side of the opposite-side layout; the bodies of the framework II and the framework IV are C-shaped, and the bodies are in an occlusion position relation; an insulating distance is kept between the bodies and the bodies are located at the other side of the opposite-side layout; the chip I is distributed on the front face of the body of the framework I; the chip II and the chip IV are respectively distributed on the front face of the body of the framework IV; the chip III is distributed on the front face of the body of the framework III; and the directions of polarities of the chip I, the chip II, the chip III and the chip IV are the same. According to the equal-directional array type rectifier bridge stack disclosed by the invention, the quality of a product is stable and the cost is greatly reduced.
Owner:YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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