The invention provides physical vapor deposition equipment used for thick film deposition. The physical vapor deposition equipment comprises a permanent magnet device, a target material, a wafer baseand a cavity wall, and further comprises a cavity wall baffle, a wafer shield ring and a shield ring supporting and adjusting device. One end of the cavity wall baffle is fixed between the target material and the cavity wall, the other end of the cavity wall baffle is a free end, and a first cooling pipe cavity used for containing a cooling pipe is arranged in the cavity wall baffle. The wafer shield ring comprises a vertical portion and a horizontal portion, the horizontal portion is annularly arranged on the upper edge of the wafer, the vertical portion is arranged on the periphery of the lower portion of the horizontal portion, a second cooling pipe cavity used for containing a cooling pipe is arranged in the vertical portion, and a groove is formed in the end, close to the vertical portion, of the horizontal portion. The shield ring supporting and adjusting device comprises an ejector pin, an ejector pin ring, a connecting rod and a transmission mechanism. One end of the ejector pin is inserted into the groove, the other end of the ejector pin is fixedly connected with the ejector pin ring, the ejector pin ring is connected with the transmission mechanism arranged on the outerportion through the connecting rod, and the ejector pin ring surrounds the periphery of the wafer base. According to the equipment, cooling and temperature control to the wafer, a deposition cavity and a process set can be effectively achieved in the deposition process.