The invention discloses a metallization and
heat sink integrated preparation method of an AlN
ceramic substrate. According to the preparation method, a Ti metallization layer, a Ti-Cu gradient
transition layer and a Cu
heat sink layer are sequentially formed on the AlN
ceramic substrate by the aid of a
physical vapor deposition technology, and a
transition layer Al3Ti+
TiN is formed between an AlN layer and a Ti layer in the
deposition process. The method specifically comprises the steps that surface
polishing treatment is performed on the AlN
ceramic substrate; the polished AlN
ceramic substrate is soaked, cleaned and then dried; the surface of the cleaned AlN
ceramic substrate is sequentially plated with the Ti metallization layer, the Ti-Cu gradient
transition layer and the Cu
heat sink layer by the aid of a magnetron
sputtering deposition method, in the
deposition process, the transition layer Al3Ti+
TiN is automatically formed between the AlN layer and the Ti layer, and finally, the metallization and heat sink integrated AlN
ceramic substrate is formed. According to the method, the metallization and heat sink integrated plating layer is deposited on the AlN ceramic substrate by the aid of the high vacuum magnetron
sputtering technology, so that the overall packaging strength is greatly improved, the packaging process flow is shortened, the packaging consumption is reduced, and the production cost is remarkably reduced.