54results about How to "Improve moisture resistance reliability" patented technology

A highly reliable semiconductor device with the improved humidity resistance reliability is disclosed. A disclosed epoxy resin composition for semiconductor encapsulation encapsulates, in the manufacture of the semiconductor device, a semiconductor element that is mounted on a lead frame having a die pad unit or a circuit substrate and a wire that connects an electrical junction disposed on the lead frame or circuit substrate and an electrode pad disposed on the semiconductor element. The epoxy resin composition includes an epoxy resin (A), a curing agent (B), and an inorganic filler (C). The epoxy resin (A) has a main peak area of 90% or more with respect to the total area of all peaks as measured by the gel permeation chromatography area method.

A monolithic ceramic electronic component includes a component body and outer electrodes. The component body includes a plurality of stacked ceramic layers and a plurality of inner electrodes which extend between the ceramic layers, which contain Ni, and which include exposed ends exposed on predetermined surfaces of the component body. The outer electrodes are electrically connected to the exposed ends of the inner electrodes and are formed on the predetermined surfaces of the component body by plating. The inner electrodes include Mg—Ni coexistence regions where Mg and Ni coexist.

Am organic electroluminescent device (100A) in an embodiment includes an element substrate including a plurality of organic electroluminescent elements (3) supported by a substrate; and a thin film encapsulation structure (10E) formed on the plurality of organic electroluminescent elements. The thin film encapsulation structure (10E) includes at least one complex stack body (10S) including a first inorganic barrier layer (12E), an organic barrier layer (14E) in contact with a top surface of the first inorganic barrier layer (12E) and including a plurality of solid portions discretely distributed, and a second inorganic barrier layer (16E) in contact with the top surface of the first inorganic barrier layer and a top surface of each of the plurality of solid portions of the organic barrier layer. The plurality of solid portions include a plurality of solid portions discretely provided and each having a recessed surface.

A multilayer ceramic capacitor includes a laminate of ceramic layers and internal electrodes, and a pair of external electrodes located on both end surfaces of the laminate and electrically connected to the internal electrodes. Each of the pair of external electrodes includes an underlying electrode layer on the surface of the laminate and including Cu, a bonding portion partially provided on a surface of the underlying electrode layer and including a Cu3Sn alloy, and a conductive resin layer provided on surfaces of the underlying electrode layer and the bonding portion, and a total area of the bonding portion is not less than about 2.7% and not more than about 40.6% of a total area of the underlying electrode layer.

A thin film encapsulation structure included in an organic EL display apparatus includes a first inorganic barrier layer, an organic barrier layer in contact with the inorganic barrier layer, and a second inorganic barrier layer in contact with the organic barrier layer. The thin film encapsulation structure is formed on an active region and the active region side portion of a plurality of lead wires extending from the active region to a terminal. Each of the lead wires at least partially includes, at at least the lowermost portions of two side surfaces thereof in contact with the first inorganic barrier layer, a forward tapering side surface portion having a tapering angle smaller than 90 degrees in a cross-section parallel to a line width direction thereof. The thin film encapsulation structure includes an inorganic barrier layer joint portion in which the organic barrier layer is not present, and the first inorganic barrier layer and the second inorganic barrier layer are in direct contact with each other. On the respective portions, of the lead-out wires, having the forward tapered side surface portions, the inorganic barrier layer joint portion is formed and the active region is completely enclosed by the inorganic barrier layer joint portion.

A multilayer ceramic electronic component includes a laminated body, and first and second external electrodes respectively provided on first and second end surfaces of the laminated body. The laminated body includes an inner layer portion in which the first and second internal electrode layers oppose each other with the dielectric ceramic layers interposed therebetween, and outer layer portions sandwiching the inner layer portion in the lamination direction and a side margin portion sandwiching the inner layer portion and the outer layer portions in the width direction. The side margin portion is defined by ceramic layers laminated in the width direction, and includes, as the ceramic layers, an inner layer on an innermost side of the laminated body and an outer layer on an outermost side of the laminated body.

A first outer electrode and first inner electrodes are supplied with an anode potential and a second outer electrode and second inner electrodes are supplied with a cathode potential when a monolithic ceramic capacitor is mounted and in use. The first outer electrode supplied with the anode potential has a thickness that is greater than a thickness of the second outer electrode supplied with the cathode potential.

The film-forming method according to an embodiment of the present invention includes: a step A for forming a photocurable resin liquid film on a substrate; a step B for vaporizing the photocurable resin in a first region on the substrate by selectively irradiating the first region with infrared rays or visible light having a wavelength that is longer than 550 nm; and a step C for obtaining a photocured resin film by curing the photocurable resin in the second region on the substrate, said second region including the first region, by irradiating, simultaneously with the step 3 or after performing the step 3, the second region with light, to which the photocurable resin is sensitive.

An organic EL device (100A) includes an active region (R1) including a plurality of organic EL elements and includes a peripheral region (R2) located in a region other than the active region. The organic EL device includes an element substrate (1) including a substrate, and the plurality of organic EL elements supported by the substrate; and a thin film encapsulation structure (10A) covering the plurality of organic EL elements. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer and a top surface of the organic barrier layer. The peripheral region includes a first protruding structure (22a) including a portion extending along at least one side of the active region, the first protruding structure being supported by the substrate, and also includes an extending portion (12e), of the first inorganic barrier layer, extending onto the first protruding structure, the first protruding structure having a height larger than a thickness of the first inorganic barrier layer.

In a laminate type ceramic electronic component, when an external electrode is formed directly by plating onto a surface of a component main body, the plating film that is to serve as the external electrode may have a low fixing strength with respect to the component main body. In order to prevent this problem, an external electrode includes a first plating layer composed of a Ni-B plating film and is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no B is formed on the first plating layer. Preferably, the B content of the Ni-B plating film constituting the first plating layer is about 0.1 wt % to about 6 wt %.