Epoxy resin composition for semiconductor encapsulation and semiconductor device
A technology of epoxy resin and semiconductor, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc. It can solve the problems of low reliability of moisture resistance, increased resistance of joints, disconnection of joints, etc., and achieve reliability High, moisture-resistant reliability improvement effect
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Embodiment 1)
[0147] Epoxy resin B (6.55 parts by mass), curing agent A (6.20 parts by mass), fused spherical silica (86.00 parts by mass) as a filling material, curing accelerator (0.20 parts by mass), coupling agent (0.25 parts by mass parts), carbon black (0.30 parts by mass) as a colorant, and carnauba wax (0.50 parts by mass) as a mold release agent, mixed using a mixer at 15 to 28°C, followed by roller kneading at 70°C to 100°C . After cooling, it was pulverized to obtain an epoxy resin composition.
Embodiment 2~4、 comparative example 1、2
[0149] According to the compounding of the epoxy resin composition for semiconductor sealing described in Table 1, it carried out similarly to Example 1, and obtained the epoxy resin composition for semiconductor sealing. All the blends shown in Table 1 are parts by mass.
[0150] Manufacturing of semiconductor devices:
[0151] A TEG (TEST ELEMENT GROUP: Test Element Group) chip (3.5mm×3.5mm) with aluminum electrode pads and a 352-pin BGA (a substrate with a thickness of 0.56mm, bismaleimide triazine resin / glass cloth substrate) , the package size is 30mm×30mm, the thickness is 1.17mm), the chip pad part is bonded, and the aluminum electrode pad of the TEG chip and the electrode pad of the substrate are connected in a daisy chain using copper wire 4N (copper purity 99.99% by mass) for wire bonding with a wire pitch of 80 μm. Using a low-pressure transfer molding machine ("Y series" produced by TOWA), it is made from any of Examples 1 to 4 and Comparative Examples 1 to 2 und...
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