57results about How to "Expand the luminous area" patented technology

The luminous fabric device includes one pattern layer and one optical fiber fabric layer. The pattern layer consists of one transparent area and one opaque area and forms the displayed pattern. The optical fiber fabric layer is woven with optical fibers and yarns and is used to provide light source for the luminous fabric device. The optical fiber fabric layer is fixed to the pattern layer through sewing or through one fixing assembly.

The invention mainly aims at disclosing a light-emitting element which comprises a semiconductor stack, wherein the semiconductor stack comprises an active layer, the active layer is in a multiple quantum well (MQW) structure formed by stacking a plurality of quantum well layers and a plurality of barrier layers in a staggered manner, and the plurality of the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. Therefore, the doped barrier layer can improve the carrier mobility of a hole, uniformize a light-emitting region in the active layer and improve the internal quantum efficiency (IQE) of the light-emitting element.

The invention discloses an LED (light-emitting diode) chip with a novel structure and a production method of the LED chip, and belongs to the field of a semiconductor device. The LED chip structure comprises an N-side electrode, a substrate, an active layer, a gallium phosphide layer, an indium-gallium-phosphorus layer, a P-side soldering wire electrode, an expanded electrode and a current barrier groove. The production method comprises the steps: growing the indium-gallium-phosphorus layer with the thickness of 1000 angstroms on a P side of a chip, etching and coarsing the gallium phosphide layer, evaporating the P-side soldering wire electrode and the expanded electrode by utilizing a vacuum film coating technology, etching the current barrier groove by virtue of plasma, and facilitating the ohm contact between the expanded electrode and the gallium phosphide layer in virtue of alloy. By adopting the produced LED chip, the current can be expanded to the entire chip surface through the expanded electrode, so that the effective application of the current is improved; meanwhile, by adopting the surface coarsing, the light emitting rate of the chip can be effectively improved. The LED chip has the advantages of simplicity in structure, simple and feasible production method and easiness in manufacturing.

The invention requests and protects a dual-light emitting layer structure blue-light OLED device and a manufacturing process thereof. The device comprises a positive electrode substrate, a hole injection layer, a hole transmission layer, a first light-emitting layer, a second light-emitting layer, an electronic transmission layer, an electronic injection layer and a negative electrode, wherein the first light-emitting layer and the second light-emitting layer employ the same main body materials, same object material and same thickness, and the object doping concentration of the first light-emitting layer is not higher than 50% of the object doping concentration of the second light-emitting layer. The dual-light emitting layer structure provided by the technical scheme is simple, the exciton utilization rate and the composite region can be expanded, and the efficiency roll-off of the device is effectively improved.

The invention discloses a light-expanding imaging device for eliminating moire of an LED (Light Emitting Diode) display screen. The light-expanding imaging device comprises a mask base plate and a light-expanding imaging dielectric slab, wherein the mask base plate is provided with a plurality of light-conducting cavities; the light-conducting cavities are arranged as back tapered holes with square cross sections; point light sources are arranged at the bottom of the light-conducting cavities; the light-expanding imaging dielectric slab is covered on the top surfaces of the light-conducting cavities of the mask base plate; the LED display screen is totally covered by the light-expanding imaging device provided by the invention, so that the point light sources can be turned into area light sources after the light emitted from the luminous points is subjected to the treatment, such as, the light conduction of the light-conducting cavities, the light emission of the walls of the light-conducting cavities, the light absorption, light filtering, color mixing and scattering of the light-expanding imaging dielectric slab, and the like, after the LED display screen is lightened; the luminous points are imaged on the surface of the light-expanding imaging dielectric slab after the light conduction of the light-conducting cavities, the light radiation of the walls of the light-conducting cavities and the color mixing treatment and scattering of the light-expanding imaging dielectric slab, the continuous light is formed, the grid structure and the granular sensation of the luminous points are eliminated, the moire generating conditions of a digital video (or camera) and the LED display screen are eliminated and the effect of eliminating the moire is good.

The invention relates to the technical field of organic electroluminescence, and especially relates to a compound, an organic light-emitting device and a display device. The compound has a structure represented by formula (I).

The invention discloses a lamp. The lamp (10) comprises a body (11) and a light-emitting device (12) which is mechanically and electrically connected with the body, the light-emitting device (12) comprises at least two light-emitting modules (121, 122, 123 and 124), at least one of the light-emitting modules (122, 123 and 124) of the at least two light-emitting modules can move between the retracting position and the unfolding position, and therefore the light-emitting device (12) has various light-emitting areas with different areas. Besides, the lamp is very compact in structure when the light-emitting device is completely retracted.

The invention provides a circular-emitting lamp which comprises a base, a light source, a side wall and a top cover, wherein the side wall is fixed on the base; the top cover is fixed on the side wall; the base, the side wall and the top cover form an enclosed cavity together; the light source is arranged on the base in the cavity; one surface of the top cover positioned in the cavity is a reflection surface capable of reflecting light rays; the reflection surface is an indent or convex arc surface; and the side wall is transparent, and scattering dots are distributed on the inner surface and/or the outer surface of the side wall. The emitting region is wide for the circular-emitting lamp, and the light ray uniformity and continuity are high.

A semiconductor light emitting device may include: a first conductive type nitride semiconductor layer; an active layer formed under the first conductive type nitride semiconductor layer; a second conductive type nitride semiconductor layer formed under the active layer; mesa regions formed upward from the second conductive type nitride semiconductor layer so as to expose the first conductive type nitride semiconductor layer; a second electrode formed under the second conductive type nitride semiconductor layer; a cover metal layer formed at a corner under the second conductive type nitride semiconductor layer so as to overlap a part of the second electrode, and partially exposed in the upward direction; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions; openings of the insulating layer, formed at portions corresponding to the mesa regions so as to expose the first conductive type nitride semiconductor layer; a first electrode formed under the insulating layer and in the openings; a conductive substrate formed under the first electrode; and a second electrode pad formed over the exposed cover metal layer.

The invention relates to an LED lamp. The LED lamp comprises a tube and a metal lamp holder capable of being used for high-frequency heating, wherein the tube comprises a straight part and necked parts arranged at two ends of the straight part, and smooth transition sections are arranged between the necked parts and the straight part; a lamp belt adheres to the straight part by the aid of an adhesive, and a patch power supply and LED light-emitting units are arranged on the lamp belt; the metal lamp holder is arranged outside the necked parts and is closely connected with the necked parts by the aid of welding mud; the metal lamp holder is 10-12 mm long, the necked parts are 6-8 mm long, and the gap between the metal lamp holder and the necked parts is 1-2 mm; the patch power supply is arranged in the position close to one end of the straight part, and the distance between the patch power supply and the end of the straight part is 3-5 mm. The LED lamp is simple in structure, high in lighting efficiency and low in rejection rate, comprises few components, is beneficial to industrial production line production and has unique technical advantages in aspects of breaking through the production bottleneck and substantially increasing the profit margin of products, and the welding mud is efficient and quick to solidify.

The invention discloses a thick-wall part structure, a light-emitting device and a light-emitting mode. The thick-wall part structure comprises a light guide structure body, and the light guide structure body is provided with a light source incident plane, a first reflecting plane set, a second reflecting plane set and a light-emitting plane perpendicular to the light source incident plane; the first reflecting plane set is suitable for reflecting incident light in a plane perpendicular to the light-emitting plane and the light source incident plane and forming a central light-emitting area on the light-emitting plane; and the second reflecting plane set diverges the incident light towards two opposite sides parallel to the light-emitting plane, and forms a diffusion light-emitting area on the light-emitting plane, so that the light-emitting width on the light-emitting plane is greater than the width of the light source incident surface. Light emitting of the central area is guaranteed, meanwhile, the diffusion light emitting area is added, the light emitting width is larger than the initial irradiation width of the light sources, when the distance between the light sources is large, the area between the two light sources can be completely irradiated, dark areas are avoided, and the uniform light emitting requirement of customers is met.