Semiconductor light emitting device

Abstract

A semiconductor light emitting device may include: a first conductive type nitride semiconductor layer; an active layer formed under the first conductive type nitride semiconductor layer; a second conductive type nitride semiconductor layer formed under the active layer; mesa regions formed upward from the second conductive type nitride semiconductor layer so as to expose the first conductive type nitride semiconductor layer; a second electrode formed under the second conductive type nitride semiconductor layer; a cover metal layer formed at a corner under the second conductive type nitride semiconductor layer so as to overlap a part of the second electrode, and partially exposed in the upward direction; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions; openings of the insulating layer, formed at portions corresponding to the mesa regions so as to expose the first conductive type nitride semiconductor layer; a first electrode formed under the insulating layer and in the openings; a conductive substrate formed under the first electrode; and a second electrode pad formed over the exposed cover metal layer.

Description

technical field [0001] The present invention relates to a nitride semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device capable of improving optical efficiency and having a simple structure, a method for preparing the semiconductor light-emitting device, and a light-emitting device including a structure for improving the current diffusion effect . Background technique [0002] A semiconductor light emitting device (such as a nitride semiconductor light emitting device) generally includes a light emitting structure, a first electrode (such as an n-electrode or an n-electrode pad) and a second electrode (such as a p-electrode or a p-electrode pad). The light-emitting structure includes a first conductive type semiconductor layer (such as an n-type semiconductor layer), a second conductive type semiconductor layer (such as a p-type semiconductor layer), and a semiconductor layer between the first conductive type semiconductor layer...

AI Technical Summary

Problems solved by technology

[0012] At this time, the injected current is likely to be concentrated around the irregular part of the hole electrode, and this concentration of current inevitably reduces the luminous efficiency of the light-emitting device.

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