54results about How to "Excellent pattern formation" patented technology

A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and / or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms / cm3, preferably lower than or equal to 1×1018 atoms / cm3.

Disclosed is a positive photosensitive resin composition that includes (A) a first polybenzoxazole precursor that includes: a repeating unit of Chemical Formula 1 and a thermally polymerizable functional group at least one terminal end; (B) a second polybenzoxazole precursor that includes a repeating unit of Chemical Formula 3; (C) a photosensitive diazoquinone compound; (D) a silane compound; and (E) a solvent.

The present invention relates to an alkali-soluble photosensitive resin composition and a dry film resist using the photosensitive resin composition, and more particularly to a resist having excellent heat resistance by including an acrylate resin effective for improving adhesion. , chemical resistance, and long-term stability, and a photosensitive resin composition having excellent adhesion to Cu or ITO (indium tin oxide) substrates, and a photosensitive dry film resist using the photosensitive resin composition.

In a phase shift mask blank comprising a transparent substrate and a phase shift film deposited thereon and having a phase shift of 150-200° with respect to sub-200 nm light, the phase shift film is composed of a silicon base material consisting of silicon, nitrogen and optionally oxygen, has a thickness of up to 70 nm, and provides a warpage change of up to 0.2 μm in a central region of a surface of the substrate before and after the deposition of the phase shift film on the substrate.

Provided is a negative-type photosensitive resin composition comprising a resin compound (A) having a weight-average molecular weight of at least 1000, a (meth)acryloyl compound (B), a silane-modified resin (C), a radical-generating photopolymerization initiator (D), and an epoxy group-containing crosslinking agent (E) which does not contain a silicon atom, wherein the resin compound (A) is provided with a resin compound (A1) having two or more (meth)acryloyl groups in each molecule and having a carboxyl group which reacts with the epoxy group, and the (meth)acryloyl compound (B) has a weight-average molecular weight less than 1000 and has two or more (meth)acryloyl groups in each molecule.

A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg / KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

The invention relates to a positive radiation sensitive composition, an interlayer insulation film and a forming method thereof. The invention aims to provide a positive radiation sensitive composition, an interlayer insulation film formed by the composition and a method for forming the interlayer insulation film. The positive radiation sensitive composition has excellent radiation sensitivity. The obtained interlayer insulation film which has high light transmittance and a high voltage conservation rate further has good development and excellent pattern forming performance by which the interlayer insulation film can deal with forming condition changes of curing films. The invention relates to a positive radiation sensitive composition having a polymer (A) provided with a structural unit representing a group in formula (1) in the same or different polymer molecules and an epoxy radical structural unit, a light acid generation agent (B) and long alkyl group compound (C).

The invention provides: a composition for forming a cured film, which forms a cured film having excellent photoreaction efficiency, solvent resistance, high adhesion and alignment uniformity; an alignment material for optical alignment; and a phase difference material which is formed using the alignment material. A composition for forming a cured film, which contains (A) a compound that has an optical alignment group and one substituent selected from among a hydroxy group, a carboxyl group and an amino group, (B) a hydrophilic polymer having one or more substituents selected from among a hydroxy group, a carboxyl group and an amino group, and (C) a polymer that is obtained by polymerizing a monomer containing an N-hydroxymethyl compound or an N-alkoxymethyl (meth)acrylamide compound. This composition for forming a cured film additionally contains, if necessary, (D) a crosslinking catalyst. An alignment material is produced by forming a cured film with use of this composition for forming a cured film, while utilizing an optical alignment technique. A phase difference material is obtained by applying a polymerizable liquid crystal over the alignment material and curing the polymerizable liquid crystal thereon.

A pyrimidine azo compound represented by the following formula (I), or a tautomer thereof:wherein in formula (I), R1 represents a heterocyclic group, and R2 represents a hydrogen atom or a substituent; R3, R4, R5, R6, R7, and R8 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, an alkylsulphonyl group, an arylsulphonyl group, or a sulfamoyl group; and R3 and R4, R5 and R6; and R7 and R8 may be mutually bonded to form a 5-, 6-, or 7-membered ring.

The fine pattern forming material comprises a water-soluble component which is cross-linkable by the presence of an acid, and water and / or a water-soluble organic solvent, wherein the water-soluble component is at least one selected from the group consisting of a water-soluble polymer, a water-soluble monomer, a water-soluble oligomer, a copolymer of a water-soluble monomer and salts of these. The fine pattern forming material is formed on a resist pattern 4 capable of supplying the acid and the water-soluble component causes a cross-linking reaction under the acid from the resist pattern 4 in parts in contact with the resist pattern 4 to form a water-or alkali-insoluble film 6.

Disclosed is a positive photosensitive resin composition that includes: (A) a polybenzoxazole precursor including a repeating unit represented by the Chemical Formula 1, a repeating unit represented by the Chemical Formula 2, or a combination thereof, and a thermally polymerizable functional group at least one terminal end of the polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound including a cross-linking functional group; and (E) a solvent.

In a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon, the halftone phase shift film is composed of a silicon base material consisting of silicon, nitrogen and 0-6 at % of oxygen, has a refractive index n of at least 2.4, an extinction coefficient k of 0.4-0.7, and a thickness of 40-67 nm. The halftone phase shift film is thin enough to be advantageous for photomask pattern formation, has chemical resistance against chemical cleaning, and maintains a necessary phase shift for phase shift function and a necessary transmittance for halftone function.

An aim of the invention is to provide a cured-film formation composition for forming a cured film having photoreaction efficiency and solvent resistance, and high adhesiveness alignment uniformity, and an orientation material for photo-alignment, and a retardation material formed by use of the orientation material. A cured-film formation composition includes (A) a compound having a photo-aligning group and one substituent selected from a hydroxy group, a carboxy group, and an amino group; (B) a hydrophilic polymer having one or more substituents selected from a hydroxy group, a carboxy group, and an amino group; and (C) a polymer obtained by polymerizing a monomer including an N-hydroxymethyl compound or an N-alkoxymethyl (meth)acrylamide compound, and optionally further a cross-linking catalyst as a component (D). By use of the composition, a cured-film is formed and an orientation material is formed by utilizing photo-alignment technique. A retardation material is obtained by applying a polymerizable liquid crystal on the orientation material and curing it.

Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).

There is provided an imprint material that allows a resin film to be readily released from a mold at the time of mold release after curing, that is, an imprint material that forms a film having a low mold release property as well as high transparency, high scratch resistance, and a high fingerprint wiping-off property; and a film which is formed from the material and to which a pattern is transferred. An imprint material including: a (A) component: a compound having a propylene oxide unit and two polymerizable groups or a compound having a propylene oxide unit, an ethylene oxide unit, and two polymerizable groups; a (B) component: a silicone compound; and a (C) component: a photopolymerization initiator.

A pattern 121 provided on a transparent substrate 100 as a mask pattern includes partial patterns 121A and 121B. Each of the partial patterns 121A and 121B has a mask enhancer structure including a phase shifter 102 for transmitting exposing light in an opposite phase with respect to a transparent portion and a shielding portion 101 surrounding the phase shifter 102. The partial pattern 121A is close to other patterns 122 and 123 at distances not larger than a given distance with the transparent portion sandwiched therebetween. The width of the phase shifter 102A of the partial pattern 121A is smaller than the width of the phase shifter 102B of the partial pattern 121B.

Disclosed is a positive photosensitive resin composition that includes: (A) a polybenzoxazole precursor including a repeating unit represented by the Chemical Formula 1, a repeating unit represented by the Chemical Formula 2, or a combination thereof, and a thermally polymerizable functional group at least one terminal end of the polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound including a cross-linking functional group; and (E) a solvent.